NTE NTE2509

NTE2508 (NPN) & NTE2509 (PNP)
Silicon Complementary Transistors
Video Output for HDTV
Features:
D High Gain Bandwidth Product: fT = 500MHz
D High Breakdown Voltage: VCEO = 120V Min
D Low Reverse Transfer Capacitance and Excellent HF Response
Applications:
D High–Definition CRT Display Video Output
D Wide–Band Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 80V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 2V, IC = 0
–
–
0.1
µA
DC Current Gain
hFE
VCE = 10V, IC = 50mA
40
–
320
VCE = 10V, IC = 200mA
20
–
–
VCE = 10V, IC = 50mA
–
400
–
Gain Bandwidth Product
fT
MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Output Capacitance
NTE2508
Cob
Test Conditions
VCB = 30V, f = 1MHz
NTE2509
Reverse Transfer Capacitance
NTE2508
Cre
VCB = 30V, f = 1MHz
NTE2509
Min
Typ
Max
Unit
–
3.1
–
pF
–
4.4
–
pF
–
2.7
–
pF
–
4.0
–
pF
Collector to Emitter Saturation Voltage
VCE(sat)
IC = 50mA, IB = 5mA
–
–
1.0
V
Base to Emitter Saturation Voltage
VBE(sat)
IC = 50mA, IB = 5mA
–
–
1.0
V
.315 (8.0)
.130
(3.3)
.118 (3.0)
Dia
.433
(11.0)
.295
(7.5)
E
C
B
.610
(15.5)
.094 (2.4)