TYSEMI 2SA1875

IC
SMD Type
Product specification
2SA1875
6.50
+0.2
5.30-0.2
+0.15
-0.15
Features
+0.15
1.50 -0.15
TO-252
Unit: mm
2.30
+0.1
-0.1
+0.8
0.50-0.7
Adoption of FBET process.
2.3
+0.1
0.60-0.1
+0.15
5.55 -0.15
0.127
max
+0.25
2.65 -0.1
+0.1
0.80-0.1
+0.28
1.50 -0.1
Large current capacitance.
+0.15
0.50 -0.15
200V(min).
+0.2
9.70 -0.2
High breakdown voltage : VCEO
3 .8 0
High fT : fT=400MHz(typ).
+0.15
4.60-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-to-Base Voltage
VCBO
-200
V
Collector-to-Emitter Voltage
VCEO
-200
V
Emitter-to-Base Voltage
VEBO
-3
V
Collector Current
IC
-300
mA
Collector Current (Pulse)
ICP
-600
mA
Base Current
IB
-30
mA
0.8
W
12
W
Collector Dissipation
PC
Tc=25
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to 150
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
IC
SMD Type
Product specification
2SA1875
Electrical Characteristics Ta = 25
unless otherwise stated
Parameter
Symbol
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE
DC Current Gain
Testconditons
Min
Typ
VCB=-150V, IE=0
VEB=-2V, IC=0
VCE=-10V, IC=-50mA
60
VCE=-10V, IC=-250mA
20
Max
Unit
-0.1
ìA
-1.0
ìA
320
VCE=-10V, IC=-100mA
400
MHz
Output Capacitance
Cob
VCB=-30V, f=1MHz
5.0
pF
Reverse Transfer Capacitance
Cre
VCB=-30V, f=1MHz
4.2
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=-50mA, IB=-5mA
-1.0
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=-50mA, IB=-5mA
-1
V
Gain-Bandwidth Product
fT
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=-10ìA, IE=0
-200
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, RBE=
-200
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=-100ìA, IC=0
-3
V
hFE Classification
Rank
D
E
F
hFE
60 to 120
100 to 200
160 to 320
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2