409CMQ135/150 409CMQ135R/150R Technical Data Data Sheet N0991, Rev. E Green Products 409CMQ135/150 409CMQ135R/150R SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes ● Reverse battery protection ● Converters ● UPS System ● Welding Features: • • • • • • • • • 175 ℃ TJ operation Center tap module High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In mm/Inches 409CMQ135 409CMQ150 409CMQ135R 409CMQ150R Please Note: Suffix “R” Denotes For Reversed Polarity PRM4 (Isolated) MARKING,MOLDING RESIN st nd Marking for 409CMQ135/R 409CMQ150/R, 1 row SS YYWWL, 2 row 409CMQ135/409CMQ135R 409CMQ150/409CMQ150R Where YY is the manufacture year WW is the manufacture week code L is the wafer’s Lot Number Molding resin Epoxy resin UL:94V-0 • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • 409CMQ135/150 409CMQ135R/150R Technical Data Data Sheet N0991, Rev. E Green Products Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR Condition - Average Forward Current IF(AV) 50% duty cycle @TC =105°C, rectangular wave form Peak One Cycle Non-Repetitive Surge Current(per leg) IFSM 8.3 ms, half Sine pulse Max. 135 409CMQ135/R 150 409CMQ150/R 200 400 Units V per leg per device A 2760 A Electrical Characteristics: Characteristics Forward Voltage Drop (per leg) * Symbol VF1 VF2 Reverse Current (per leg) * Junction Capacitance (per leg) Typical Series Inductance (per leg) Isolation Voltage IR1 IR2 CT LS VISO Voltage Rate of Change * dv/dt Condition @ 200A, Pulse, TJ = 25 °C @ 400A, Pulse, TJ = 25 °C @ 200A, Pulse, TJ = 125 °C @ 400A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body Tracer to 1500V, measuring whether conducting base plate and the center column - Max. 1.03 1.21 0.72 0.83 6 85 Units V V mA mA 6000 pF 5.0 nH 1500 V 10,000 V/μs Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case(per leg) Typical Thermal Resistance Junction to Case(per package) Typical Thermal Resistance, case to Heat Sink Mounting Torque Approximate Weight Case Style Symbol TJ Tstg Condition - Specification -55 to +150 -55 to +150 Units °C °C RθJC DC operation 0.40 °C/W RθJC DC operation 0.20 °C/W Rθcs Mounting surface, smooth and greased 0.10 °C/W TM wt - - Mounting Torque Base Terminal Torque 79 PRM4 Isolated • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • 24(min) 35(max) Kg-cm 35(min) 46(max) g 409CMQ135/150 409CMQ135R/150R Technical Data Data Sheet N0991, Rev. E Green Products • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com • 409CMQ135/150 409CMQ135R/150R Technical Data Data Sheet N0991, Rev. E Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • China - Germany - Korea - Singapore - United States • • http://www.smc-diodes.com - sales@ smc-diodes.com •