409CMQ SERIES N0991 REV.E

409CMQ135/150
409CMQ135R/150R
Technical Data
Data Sheet N0991, Rev. E
Green Products
409CMQ135/150 409CMQ135R/150R
SCHOTTKY RECTIFIER
Applications:
● High current switching power supply ● Plating power supply ● Free-Wheeling diodes
● Reverse battery protection ● Converters ● UPS System ● Welding
Features:
•
•
•
•
•
•
•
•
•
175 ℃ TJ operation
Center tap module
High purity, high temperature epoxy encapsulation for enhanced
mechanical strength and moisture resistance
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
Mechanical Dimensions: In mm/Inches
409CMQ135
409CMQ150
409CMQ135R
409CMQ150R
Please Note: Suffix “R” Denotes For Reversed Polarity
PRM4 (Isolated)
MARKING,MOLDING RESIN
st
nd
Marking for 409CMQ135/R 409CMQ150/R, 1 row SS YYWWL, 2 row 409CMQ135/409CMQ135R 409CMQ150/409CMQ150R
Where YY is the manufacture year
WW is the manufacture week code
L is the wafer’s Lot Number
Molding resin
Epoxy resin UL:94V-0
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409CMQ135/150
409CMQ135R/150R
Technical Data
Data Sheet N0991, Rev. E
Green Products
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
VRRM
VRWM
VR
Condition
-
Average Forward Current
IF(AV)
50% duty cycle @TC =105°C,
rectangular wave form
Peak One Cycle Non-Repetitive
Surge Current(per leg)
IFSM
8.3 ms, half Sine pulse
Max.
135
409CMQ135/R
150
409CMQ150/R
200
400
Units
V
per leg
per device
A
2760
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop
(per leg) *
Symbol
VF1
VF2
Reverse Current (per leg) *
Junction Capacitance
(per leg)
Typical Series Inductance
(per leg)
Isolation Voltage
IR1
IR2
CT
LS
VISO
Voltage Rate of Change
*
dv/dt
Condition
@ 200A, Pulse, TJ = 25 °C
@ 400A, Pulse, TJ = 25 °C
@ 200A, Pulse, TJ = 125 °C
@ 400A, Pulse, TJ = 125 °C
@VR = rated VR TJ = 25 °C
@VR = rated VR TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz
Measured lead to lead 5 mm
from package body
Tracer to 1500V, measuring
whether conducting base
plate and the center column
-
Max.
1.03
1.21
0.72
0.83
6
85
Units
V
V
mA
mA
6000
pF
5.0
nH
1500
V
10,000
V/μs
Pulse Width < 300µs, Duty Cycle <2%
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance
Junction to Case(per leg)
Typical Thermal Resistance
Junction to Case(per package)
Typical Thermal Resistance,
case to Heat Sink
Mounting Torque
Approximate Weight
Case Style
Symbol
TJ
Tstg
Condition
-
Specification
-55 to +150
-55 to +150
Units
°C
°C
RθJC
DC operation
0.40
°C/W
RθJC
DC operation
0.20
°C/W
Rθcs
Mounting surface, smooth
and greased
0.10
°C/W
TM
wt
-
-
Mounting
Torque
Base
Terminal
Torque
79
PRM4 Isolated
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24(min)
35(max)
Kg-cm
35(min)
46(max)
g
409CMQ135/150
409CMQ135R/150R
Technical Data
Data Sheet N0991, Rev. E
Green Products
• China - Germany - Korea - Singapore - United States •
• http://www.smc-diodes.com - sales@ smc-diodes.com •
409CMQ135/150
409CMQ135R/150R
Technical Data
Data Sheet N0991, Rev. E
Green Products
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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