171

NTE171
Silicon NPN Transistor
Audio/Video Amplifier
Description:
The NTE171 is a silicon NPN transistor in a TO202 type case designed for high−voltage TV video and
chroma output circuits, high−voltage linear amplifiers, and high−voltage transistor regulators.
Features:
D High Collector−Emitter Breakdown Voltage Voltage: V(BR)CER = 300V @ IC = 1mA
D Low Collector−Base Capacitance: Ccb = 3pF Max @ VCB = 20V
Absolute Maximum Ratings:
Collector−Emitter Voltage (IC = 1mA, RBE = 10kΩ, Note 1), VCER . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.25W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction to Ambient, RΘJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W
Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20°C/W
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260°C
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
300
−
−
V
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CER
IC = 1mA, IB = 0, Note 1
Collector Cutoff Current
ICBO
VCB = 300V, IE = 0
−
−
10
µA
Emitter Cutoff Current
IEBO
VBE = 5V, IC = 0
−
−
10
µA
hFE
IC = 4mA, VCE = 10V
20
−
−
IC = 20mA, VCE = 10V
30
−
150
IC = 40mA, VCE = 10V
20
−
−
IC = 20mA, VCE = 10V, f = 20MHz
50
−
−
MHz
VCB = 20V, IE = 0, f = 1MHz
−
−
3
pF
ON Characteristics (Note 1)
DC Current Gain
Dynamic Characteristics
Current Gain−Bandwidth Product
fT
Collector−Base Capacitance
Ccb
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.380 (9.56)
.180 (4.57)
.132 (3.35) Dia
C
1.200
(30.48)
Ref
.500
(12.7)
.325
(9.52)
.070 (1.78) x 45°
Chamf
.300
(7.62)
.400
(10.16)
Min
.100 (2.54)
.050 (1.27)
E
B
C
.100 (2.54)