V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics Bare Die Portfolio Infrared Emitters and Photo Detectors TABLE OF CONTENTS Introduction to Bare Die.......................................................................................................02 Die Portfolio..........................................................................................................................03 • Nomenclature................................................................................................................03 • Infrared Emitters............................................................................................................04 • Photodiodes..................................................................................................................06 • Phototransistors............................................................................................................08 Custom Design.....................................................................................................................09 Packaging Options ..............................................................................................................10 RESOURCES • Infrared emitter bare die product portfolio - www.vishay.com/die-wafer/ir-emitting-diodes/ • Photo detector bare die product portfolio - www.vishay.com/die-wafer/photo-detectors/ • For technical support contact - [email protected] or [email protected] • Sales contacts - www.vishay.com/doc?99914 One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components SELECTOR GUIDE 1/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Introduction Benefits of using bare die • High design flexibility without package limitations • High level of integration • Temperature management with chip-on-board (COB) technology • Highly accurate die placement • Reduced system cost • Customer specific design • Possible process flow modification Vishay service • Design assistance • Assembly assistance • Die handling assistance Wafer processing duty • Wafer mapping/wafer inking • Wafer thinning • Wafer dicing • Die sorting • Visual inspection Packaging and shipping methods • Unsawn wafer: the wafers are delivered in a sealed bag and die are not singulated • Sawn wafer on loose foil: the wafers are sawn and supplied on blue tape • Sawn wafer on discoframe: the wafers are sawn and supplied on a blue tape in a plastic frame SELECTOR GUIDE 2/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Die Usage Basic Guidelines Bare die products require careful handling and storage as well as optimized assembly processes and tools to avoid damage and deviations from the expected performance. The following guidelines are based on Vishay’s many years of experience of manufacturing and assembling semiconductor devices. Die Handling To avoid contamination and damage die or wafers should never be handled by bare hands. Mechanical pressure has to be limited and special tweezers have to be used for grabbing a die from the packing. Storage time for wafers in sealed condition shall not exceed 6 months (storage ambient conditions: TA = 15...30 °C; relative humidity: < 60 %). Die Attach To assure optimal electrical conductivity between silicon and copper, Vishay wafers are coated on the back side with two or three metallic solderable layers which are suitable for a wide range of solders, ranging from solder alloys to conductive epoxies. Fluxes are not recommended for solders because residuals can contaminate the surface of the die, and cause voids under the die, thus compromising heat dissipation and electrical performance. Vishay experts are happy to advise you on which assembly materials are best suited to your specific requirements.. Wire Bonding Vishay does not define absolute bonding parameters, since bonding equipment and materials vary greatly. Customers are advised to optimize bonding parameters according to their specific equipment. Upon request, Vishay is ready to assist you in optimizing your wirebonding process. Bare Die Naming Rules for Infrared Emitters T B 94 14 VA SF F Telefunken Technology Wavelength Chip Size Internal Package Form Status B: Bulk Emitter S: Surface Emitter 94: 940 nm 89: 890 nm 87: 870 nm 85: 850 nm 83: 830 nm 08: 08 mil 11: 11 mil 14: 14 mil 17: 17 mil V: Emitter A: Version / Type S: Sawn Wafer F: Placed on Foil F: Finished Good (Now part of Vishay) Bare Die Naming Rules for Photo Detectors T 11 10 P6 SD F Telefunken Technology Size Type Package Form Status (Now part of Vishay) 11: Homogeneous 15: Epitaxial Internal Classification P: Photodetector 6: Internal Classification S: Sawn Wafer D: Mounted on Discoframe F: Finished Good SELECTOR GUIDE 3/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Infrared Emitters Vishay offers a wide variety of high-power, high-speed infrared emitter chips for a broad range of applications. Vishay offers double heterojunction infrared emitters with the lowest forward voltages on the market; surface emitters that deliver the highest radiant intensities; and highly efficient homojunction emitters. All Vishay emitter chips satisfy the requirements of AEC Q101. Portfolio Vishay offers a wide selection of chips, emitting at 830 nm, 850 nm, 870 nm, 890 nm, 940 nm and 950 nm. Typical Applications • IR touch display based devices such as printer displays, ebook reader, smart phones, tablets, and ultrabooks • Navigation devices • Automotive dashboard displays • Data communication • Illumination for cameras Available Technologies • Liquid Phase Epitaxy (LPE): –– Homojunction structures on GaAs –– Double heterojunction structures (DH) on GaAs/AlGaAs • Metal Organic Vapor Phase Epitaxy (MOVPE): –– High-power surface emitter –– Bulk emitter Double Heterojunction Structure Homojunction Structure P Electrode P Electrode P Cladding P Cladding N Cladding P Layer N Cladding Surface Emitter GaAs Substrate AlGaAs-layer N Pad N Electrode N Cladding MQW P Cladding Bonding Layer N Electrode Silicon Substrate P Electrode SELECTOR GUIDE 4/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die IR Surface Emitters Angle of Half Intensity (±°) Surge Forward Current (A at tp = 100 µs) Rise Time (ns) 350A 55 5 15 850 75B 55 1.5 15 0.355 x 0.355 x 0.17 850 30C 55 1 15 Surface 0.250×0.250×0.17 850 40D 55 1 10 TS9414VA Surface 0.355×0.355×0.17 940 35C 60 1 10 TS9410VA Surface 0.250×0.250×0.17 940 12E 55 1 10 T8719VP 0.47 x 0.47 x 0.16 870 31 80 1 15 T8914VP 0.37 x 0.37 x 0.17 885 21 80 1 25 T8514VB 0.37 x 0.37 x 0.17 850 23 - 1 25 T8714VP 0.37 x 0.37 x 0.16 865 26 80 1 13 T163VU 0.37 x 0.37 x 0.265 950 22 - 1.5 800 Type Chip Dimensions LxWxH (mm) TS8542VA Surface 1.066 x 1.066 x 0.17 850 TS8520VA Surface 0.508 x 0.508 x 0.17 TS8514VA Surface TS8510VA Part Number Product Image Peak Radiant Wavelength Power (nm) (mW) TB9414VA Bulk 0.37 x 0.37 x 0.19 940 21C 80 1 15 TB9408VA Bulk 0.2 x 0.2 x 0.19 940 22C 80 0.5 15 Note *The measurements are based on samples of die which are mounted on TO-18 gold header without resin coating. A IF=1A, B IF=250mA, C IF=100mA, D IF=70mA, E IF=50mA SELECTOR GUIDE 5/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Photo Detectors Vishay offers the broadest selection of high-speed, low dark current PIN photodiode chips. They are specially designed to achieve excellent sensitivity together with high reliability. Vishay phototransistors are extremely sensitive and fast compared to other such devices on the market. Portfolio • Vishay offers the broadest selection of photo detector chips suitable for ambient light and IR detection • Available technologies: –– Epitaxial –– Homogeneous Typical Applications • IR touch display based devices • High-speed data transfer • Light barriers • Position sensing • Alarm and safety equipment Cross Section of PIN Photodiode and Phototransistor PIN Photodiode Antireflection Coating Contact Isolation p+ Space Charge Region n+ Phototransistor Contact Antireflection Coating Metallization Emitter n Base p Isolation Collector EA n n+ Contact SELECTOR GUIDE 6/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die PIN Photodiodes Part Number Product Image Chip Dimensions LxWxH (mm) Reverse Light Reverse Angle Peak Spectral Bandwidth Current Rise Time/ Photo Dark of Half Wavelength (nm) (EA = 1 mW/cm2 Fall Time Sensitive Current Sensitivity (nm) (50%) λ = 950 nm (ns) Area (mm2) (nA) (± °) VR = 5 V) T1112P 3.05 x 2.1 x 0.28 970 640 to 1070 44 µA 0.1 60 130/130 5.5 T1113P 2.97 x 2.97 x 0.28 960 660 to 1050 55 µA 2 60 100/100 7.5 T1116P 2.97 x 2.97 x 0.28 940 500 to 1050 43 µA 2 60 40/40 7.7 T1110P6 2.97 x 2.97 x 0.28 940 600 to 1050 55 µA 2 60 100/100 7.5 T1120P 2.37 x 2.37 x 0.28 940 600 to 1050 35 µA 2 60 100/100 4.4 T1172P 1.47 x 1.07 x 0.28 960 640 to 1060 8.7 µA <1 60 625/670 1.06 T1170P 1.17 x 1.17 x 0.28 920 600 to 1040 7 µA <1 60 100/100 0.88 T330P 0.67 x 0.67 x 0.28 900 600 to 1050 2.3 µA 0.1 60 4/4 0.23 T337P 0.67 x 0.67 x 0.28 970 610 to 1080 2.3 µA <1 60 550/100 0.23 T1180P 0.67 x 0.3 x 0.28 810 590 to 1010 0.59 µA <1 60 530/170 0.055 T1187P 0.67 x 0.3 x 0.28 800 580 to 1070 0.66 µA <1 60 700/160 0.053 SELECTOR GUIDE 7/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Phototransistors Part Number Product Image Chip Dimensions LxWxH (mm) Spectral Peak Bandwidth Wavelength (nm) (nm) (50%) Collector Light Current (Ee = 1 mW/cm2 λ = 950 nm VCE = 5V) Collector Emitter Dark Current (nA) Angle of Half Sensitivity (± °) Rise Time/ Fall Time (ns) Photo Sensitive Area (mm2) T1090P6 0.53 x 0.53 x 0.185 840 440 to 1070 65-750 µA** 1 60 4300/7700 0.14 T5096P 0.39 x 0.39 x 0.185 910 660 to 1030 72-600 µA** <1 60 3800/3500 0.057 Note *The measurements are based on samples of die which are mounted on TO- header without resin coating **Binning is available Ambient Light PIN Photodiodes Part Number Product Image Chip Dimensions LxWxH (mm) Reverse Light Spectral Reverse Angle Peak Current Rise Time/ Photo Bandwidth Dark of Half Wavelength (EV = 100 lx, CIE Fall Time Sensitive (nm) Current Sensitivity (nm) illuminant A, VR (ns) Area (mm2) (50%) (nA) (± °) = 5 V) T1610P 2.97 x 2.97 x 0.28 560 390 to 800 2.9 µA 2 60 100/100 7.7 T1670P 0.72 x 0.72 x 0.28 560 390 to 800 138 nA 0.1 60 100/100 0.27 T1677P 0.72 x 0.72 x 0.28 570 430 to 700 87 nA 0.1 60 100/100 0.27 T1678P 0.72 x 0.72 x 0.2 570 440 to 700 87 nA 0.1 60 100/100 0.34 Ambient Light Phototransistors Part Number Product Image T1070P Chip Dimensions LxWxH (mm) 0.72 x 0.72 x 0.22 Collector Light Spectral Peak Current Bandwidth Wavelength (EV = 100 lx, CIE (nm) (nm) illuminant A, VCE (50%) = 5 V) 570 440 to 800 50 µA Collector Emitter Dark Current (nA) Angle of Half Sensitivity (± °) Rise Time/ Fall Time (ns) Photo Sensitive Area (mm2) 3 60 - 0.25 Note *The measurements are based on samples of die which are mounted on TO- header without resin coating SELECTOR GUIDE 8/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Custom Design Vishay offers highly flexible design and fabrication of semi- and full custom specific photodiode and emitter chips. The huge variety of applications and assembly options requires bare die that are tailored to the specific application to keep the full potential of the device. A good fit between chip, assembly, and packaging is becoming ever more important with tighter space and power requirements. Vishay’s flexible technology base allows customization for a range of parameters and features as listed below: Emitters • Geometrical Design Chip outside dimensions, thickness, pad size, and shape and pad positions can be adjusted according to the customer specification. • Pad Topology Chip topology can be customized with respect to interconnect technology. Photodetectors • Geometrical Design Almost all geometrical parameters of a photodiode can be customized. This includes chip outside dimensions, chip thickness, pad size and shape, pad positions, photodiode position in an array, and alignment marks. • AR Coating / Optical Filters Depending on impinging wavelength and application all photodiodes are equipped with an AR coating. Customization allows us to match the AR coating to the wavelength needed by the customer. • Pad Topology Depending on interconnect technology pad topology can be also optimized. • Pitch Linear or two-dimensional arrays with customizable pitch. SELECTOR GUIDE 9/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Packing Options Vishay provides you with several packing options which can fit with virtually any assembly line. Parts are 100 % probed and inspected. Unsawn wafer Sawn wafer on discoframe Die are not singulated, wafers are provided in box. Wafer is provided on blue foil; probed and inked; measurement data is attached. Upon request chips can also be delivered on plastic frames. For shipment, the wafers are arranged in stacks. The stacks are hermetically sealed in plastic bags to ensure protection against environmental influence (humidity and contamination). Sawn wafer on loose foil The wafer is provided on blue film where dies are singulated, ready for pick and place, bad chips are removed, and measurement data is attached. The following documents are available upon the request: • Material content certificate –– RoHS (DIN EN 62321) • Halogen free (DIN EN 14582) –– SGA reports –– Failure catalogue –– ESD test results (according to the JEDEC standards) SELECTOR GUIDE 10/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die WORLDWIDE SALES CONTACTS THE AMERICAS EUROPE UNITED STATES GERMANY VISHAY AMERICAS ONE GREENWICH PLACE SHELTON, CT 06484 UNITED STATES PH: +1-402-563-6866 FAX: +1-402-563-6296 VISHAY ELECTRONIC GMBH DR.-FELIX-ZANDMAN-PLATZ 1 95100 SELB GERMANY PH: +49-9287-71-0 FAX: +49-9287-70435 ASIA FRANCE SINGAPORE VISHAY INTERTECHNOLOGY ASIA PTE LTD. 37A TAMPINES STREET 92 #07-00 SINGAPORE 528886 PH: +65-6788-6668 FAX: +65-6788-0988 VISHAY S.A. 199, BD DE LA MADELEINE 06003 NICE, CEDEX 1 FRANCE PH: +33-4-9337-2727 FAX: +33-4-9337-2726 P.R. CHINA UNITED KINGDOM VISHAY CHINA CO., LTD. 15D, SUN TONG INFOPORT PLAZA 55 HUAI HAI WEST ROAD SHANGHAI 200030 P.R. CHINA PH: +86-21-22315555 FAX: +86-21-22315551 VISHAY LTD. SUITE 6C, TOWER HOUSE ST. CATHERINE’S COURT SUNDERLAND ENTERPRISE PARK SUNDERLAND SR5 3XJ UNITED KINGDOM PH: +44-191-516-8584 FAX: +44-191-549-9556 JAPAN VISHAY JAPAN CO., LTD. SHIBUYA PRESTIGE BLDG. 4F 3-12-22, SHIBUYA SHIBUYA-KU TOKYO 150-0002 JAPAN PH: +81-3-5466-7150 FAX: +81-3-5466-7160 SELECTOR GUIDE 11/11 VMN-SG2200-1502 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000