VSMB14942 Datasheet

VSMB14942
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2
• Peak wavelength: p = 940 nm
• High reliability
• High radiant power
• Very high radiant intensity
• Angle of half intensity:  = ± 16°
• Suitable for high pulse current operation
DESCRIPTION
VSMB14942 is an infrared, 940 nm, side looking emitting
diode in GaAlAs multi quantum well (MQW) technology
with high radiant power and high speed, molded in
clear, untinted PCB based package (with lens) for surface
mounting (SMD).
APPLICATIONS
• Emitter for remote control
• IR touch panels
• Photointerrupters
• Floor life: 168 h, MSL 3, according to J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
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• Optical switch
PRODUCT SUMMARY
COMPONENT
VSMB14942
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
26
± 16
940
15
Note
• Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VSMB14942
Tape and reel
MOQ: 1500 pcs, 1500 pcs/reel
Side view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
VR
5
V
Forward current
IF
100
mA
Surge forward current
TEST CONDITION
tp = 100 μs
Power dissipation
Junction temperature
UNIT
IFSM
1
A
PV
160
mW
°C
Tj
100
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
Soldering temperature
According fig. 10, J-STD-020
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, soldered on PCB
RthJA
400
K/W
Rev. 1.2, 19-Nov-15
Document Number: 84223
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB14942
www.vishay.com
Vishay Semiconductors
120
160
140
120
100
80
RthJA = 400 K/W
60
100
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
40
20
80
60
RthJA = 400 K/W
40
20
0
0
0
20
40
60
80
0
100
Tamb - Ambient Temperature (°C)
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
TEST CONDITION
IF = 20 mA, tp = 20 ms
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
IF = 100 mA
SYMBOL
VF
VF
VF
TKVF
MIN.
1.0
-
IR
CJ
Ie
Ie
Ie
e
TKe

p

TKp
tr
tf
VR = 5 V
Reverse current
VR = 0 V, f = 1 MHz, E = 0 mW/cm2
IF = 20 mA, tp = 20 ms
Radiant intensity
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
Radiant power
IF = 70 mA, tp = 20 ms
Temperature coefficient of radiant power
IF = 20 mA
Angle of half intensity
Peak wavelength
IF = 70 mA
Spectral bandwidth
IF = 30 mA
Temperature coefficient of p
IF = 30 mA
Rise time
IF = 100 mA, 20 % to 80 %
Fall time
IF = 100 mA, 20 % to 80 %
Junction capacitance
TYP.
1.18
1.28
1.83
-0.98
MAX.
1.4
1.6
-
UNIT
V
V
V
mV/K
-
-
10
μA
2.8
920
-
116
5.5
27
210
28
-0.32
± 16
940
30
0.30
15
15
8.5
960
-
pF
mW/sr
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
tp = 100 μs
100
10
1
1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
Rev. 1.2, 19-Nov-15
VF - Forward Voltage (V)
IF - Forward Current (mA)
1000
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
IF = 100 mA
tp = 20 ms
-60 -40 -20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
Document Number: 84223
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB14942
Vishay Semiconductors
115
Ie, rel - Relative Radiant Intensity (%)
IF = 100 mA
tp = 20 ms
110
105
100
95
90
-60 -40 -20
0
20
40
60
80
100
IF = 20 mA
90
80
70
60
50
40
30
20
10
0
100
800
850
900
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
0°
Ie, rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
tp = 100 μs
100
10
1
0.1
100
1050
Fig. 8 - Relative Radiant Power vs. Wavelength
1000
10
1000
λ - Wavelength (nm)
Tamb - Ambient Temperature (°C)
1
950
1000
10°
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.6
0.4
0.2
ϕ - Angular Displacement
VF, rel - Relative Forward Voltage (%)
www.vishay.com
0
IF - Forward Current (mA)
Ie, rel - Relative Radiant Intensity (%)
Fig. 6 - Radiant Intensity vs. Forward Current
120
115
110
105
100
95
90
85
80
75
70
65
60
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
IF = 100 mA
tp = 20 ms
-60 -40 -20
0
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
Rev. 1.2, 19-Nov-15
Document Number: 84223
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB14942
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Temperature
10 s max.
217 °C
200 °C
255 °C to 260 °C
3 °C/s max.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
6 °C/s max.
150 °C
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
3 °C/s max.
60 s to 120 s
Moisture sensitivity level 3, according to J-STD-020.
60 s max.
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Time
Fig. 10 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
PACKAGE DIMENSIONS in millimeters: VSMB14942
1.20
Molding
body (lens)
0.60
PC board
+
1.60
Soldering
terminal
3.20
LED dice
Cathode mask
0.60
Polarity
1.90 ± 0.15
2.51 ± 0.15
1.10
Not indicated tolerances ± 0.1 mm
Recommended Solder Pad
1.5
(0.059)
5.0
(0.197)
Rev. 1.2, 19-Nov-15
1.5
(0.059)
Document Number: 84223
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB14942
www.vishay.com
Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters: VSMB14942
Rev. 1.2, 19-Nov-15
Document Number: 84223
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
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Revision: 02-Oct-12
1
Document Number: 91000