VSMB2943SLX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW FEATURES • Package type: surface mount • Package form: side view • Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3 • AEC-Q101 qualified • Peak wavelength: λp = 940 nm • High reliability DESCRIPTION • High radiant power VSMB2943SLX01 is an infrared, 940 nm, side looking emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed, molded in clear, untinted plastic package (with lens) for surface mounting (SMD). • High radiant intensity • Angle of half intensity: ϕ = ± 25° • Low forward voltage • Suitable for high pulse current operation APPLICATIONS • Package matches with detector VEMD2023SLX01 and VEMT2023SLX01 • IrDA compatible data transmission • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Miniature light barrier • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 • Photointerrupters • Optical switch • Remote control • IR touch panels PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 20 ± 25 940 15 VSMB2943SLX01 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB2943SLX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Forward current SYMBOL VALUE UNIT VR 5 V IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A PV 160 mW °C Power dissipation Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C according figure 9, J-STD-020 Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 250 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.1, 02-Dec-13 Document Number: 83479 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2943SLX01 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 250 K/W 80 60 40 100 80 60 RthJA = 250 K/W 40 20 20 0 0 0 10 21343 20 30 40 50 60 70 80 90 0 100 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21344 Tamb - Ambient Temperature (°C) 20 30 40 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Temperature coefficient of VF TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.15 1.35 1.6 V IF = 1 A, tp = 100 μs VF 2.2 V IF = 1 mA TKVF -1.8 mV/K IF = 100 mA TKVF -1.1 mV/K IR Not designed for reverse operation μA VR = 0 V, f = 1 MHz, E = 0 mW/cm2 CJ 70 IF = 100 mA, tp = 20 ms Ie Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of radiant power 10 20 pF 30 mW/sr IF = 1 A, tp = 100 μs Ie 170 IF = 100 mA, tp = 20 ms φe 40 mW IF = 1 mA TKφe -1.1 %/K IF = 100 mA TKφe -0.51 %/K ϕ ± 25 Angle of half intensity mW/sr deg Peak wavelength IF = 30 mA λp Spectral bandwidth IF = 30 mA Δλ 25 nm Temperature coefficient of λp IF = 30 mA TKλp 0.25 nm/K Rise time IF = 100 mA, 20 % to 80 % tr 15 ns Fall time IF = 100 mA, 20 % to 80 % tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 23 MHz Cut-off frequency Rev. 1.1, 02-Dec-13 920 940 960 nm Document Number: 83479 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2943SLX01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 180 Ie rel - Relative Radiant Intensity (%) 100 10 tp = 100 µs tp/T= 0.001 IF = 1 mA 160 140 120 IF = 100 mA 100 80 60 tp = 20 ms 1 40 0 1 2 3 VF - Forward Voltage (V) 21534 - 60 - 40 - 20 Fig. 3 - Forward Current vs. Forward Voltage 40 60 80 100 106 104 102 IF = 100 mA 100 IF = 10 mA 98 tp = 20 ms 96 94 IF = 1 mA 92 Φe rel - Relative Radiant Power (%) 100 108 90 - 40 - 20 0 20 40 60 80 70 60 50 40 30 20 10 0 840 100 Tamb - Ambient Temperature (°C) 21443 IF = 30 mA 80 90 880 920 960 0° 10° 20° 30° Ie rel - Relative Radiant Intensity tp = 100 µs 100 10 1 0.01 0.1 1 IF - Forward Current (A) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.1, 02-Dec-13 1040 Fig. 7 - Relative Radiant Power vs. Wavelength 1000 0.1 0.001 1000 λ - Wavelength (nm) 21445 Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Ie - Radiant Intensity (mW/sr) 20 Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature 110 VF, rel - Relative Forward Voltage (%) 0 Tamb - Ambient Temperature (°C) 21444 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement IF - Forward Current (mA) 1000 80° 0.6 0.4 0.2 0 22694 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 83479 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2943SLX01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 FLOOR LIFE 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label: Floor life: 4 weeks Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. DRYING 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. PACKAGE DIMENSIONS in millimeters: VSMB2943SL Rev. 1.1, 02-Dec-13 Document Number: 83479 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSMB2943SLX01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VSMB2943SL Rev. 1.1, 02-Dec-13 Document Number: 83479 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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