Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT3409
Power MOSFET
P-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR

DESCRIPTION
The UTC UT3409 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is suitable for use
as a load switch or in PWM applications.

FEATURES
* RDS(ON) <130mΩ @VGS = -10V
* RDS(ON) < 200mΩ @VGS = -4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified

SYMBOL

ORDERING INFORMATION
Note:

Ordering Number
Package
UT3409G-AE2-R
UT3409G-AE3-R
UT3409G-AL3-R
Pin Assignment: S: Source
SOT-23-3
SOT-23
SOT-323
G: Gate
1
S
S
S
Pin Assignment
2
G
G
G
3
D
D
D
Packing
Tape Reel
Tape Reel
Tape Reel
D: Drain
MARKING
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QW-R502-244.E
UT3409

Power MOSFET
ABSOLUTE MAXIMUM RATING (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
-2.6
A
Pulsed Drain Current (Note 2)
IDM
-20
A
Power Dissipation
PD
1.4
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by TJ(MAX)
3. Surface mounted on 1 in2 copper pad of FR4 board

THERMAL DATA
PARAMETER
Junction to Ambient (Note 3)

SYMBOL
θJA
RATINGS
90
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)
PARAMETER
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
SYMBOL
ID=-250μA, VGS=0V
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
-30
VGS(TH)
ID(ON)
VDS=VGS, ID=-250μA
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-2.6A
VGS=-4.5V, ID=-2A
-1
-5
RDS(ON)
VGS=0V, VDS=-15V, f=1MHz
QG
VGS=-10V, VDS=-15V, ID=-2.6A
Gate Source Charge
QGS
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VGS=-10V, VDS=-15V,
RL=5.8Ω, RGEN=3Ω
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=-1A, VGS=0V
Maximum Body-Diode Continuous Current
IS
Body Diode Reverse Recovery Time
tRR
IF=-2.6A, dI/dt=100A/μs
Body Diode Reverse Recovery Charge
QRR
IF=-2.6A, dI/dt=100A/μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
BVDSS
IDSS
IGSS
CISS
COSS
CRSS
10V
4.5V
TEST CONDITIONS
TYP
MAX UNIT
-1
±100
V
μA
nA
-1.9
-3
97
166
130
200
302
50.3
37.8
370
pF
pF
pF
6.8
2.4
1.6
0.95
7.5
3.2
17
6.8
9
nC
nC
nC
nC
ns
ns
ns
ns
-0.82
-1
-2
22
V
A
ns
nC
16.8
10
V
A
mΩ
mΩ
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QW-R502-244.E
UT3409
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs.
Drain-Source Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
250
200
200
150
150
100
100
50
50
0
0
0
500
1000
1500
2000
0
10
20
30
40
Drain-Source Breakdown Voltage, BVDSS(V)
Drain Current, ID (A)
Gate Threshold Voltage, VTH (mV)
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QW-R502-244.E
UT3409
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-244.E
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