UNISONIC TECHNOLOGIES CO., LTD UT40N04 Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR DESCRIPTION The UTC 40N04 is an N-channel enhancement mode FET using advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low on-Resistance * Fast Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UT40N04L-TN3-R UT40N04G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-467.B UT40N04 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage UNIT 40 V ±20 V TC=25°C 25 A Continuous Drain Current ID TC=70°C 20 A Pulsed Drain Current (Note 1) IDM 75 A Avalanche Current IAS 27 A Avalanche Energy L=0.1mH EAS 37 mJ TC=25°C 30 W PD Power Dissipation TC=70°C 20 W Operating Junction Temperature TJ -55 ~ 150 °C Storage Temperature TSTG -55 ~ 150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. SYMBOL VDS VGS RATINGS THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS 40 4.1 UNIT °C/W °C/W 2 of 4 QW-R502-467.B UT40N04 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current IDSS Gate- Source Leakage Current On-State Drain Current (Note 1) ON CHARACTERISTICS Gate Threshold Voltage IGSS ID(ON) Static Drain-Source On-State Resistance (Note 1) VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=32V, VGS=0V VDS=30V, VGS=0V, TJ=125°C VDS=0V, VGS=±20V VDS=5V, VGS=10V 40 VDS=VGS, ID=250µA VGS=5V, ID=8A VGS=7V, ID=8A VGS=10V, ID=10A VDS=5V, ID=10A VGS=0V, VDS=0V, f=1.0MHz 2 Forward Transconductance (Note 1) gFS Gate Resistance RG DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=20V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) (VGS=10V) QG Total Gate Charge QG (VGS=4.5V) VDS=0.5V(BR)DSS, ID=10A Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VGS=10V, VDS=20V, ID≈-1A, RGS=6Ω, RL=1Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Current IS Drain-Source Diode Forward Voltage VSD IF=10A, VGS=0V (Note 1) Reverse Recovery Time trr IF=10A, VGS=0V, dIF/dt=100A/µs Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. 3. Independent of Operating Temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT V 1 10 ±250 75 2.4 26 22 19 30 1.55 3 50 45 29 µA nA A V mΩ mΩ mΩ S Ω 1150 157 80 pF pF pF 19 9 4.5 3 10 6 26 6 nC nC nC nC ns ns ns ns 38 29 23 A 1.3 V ns nC 3 of 4 QW-R502-467.B UT40N04 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-467.B