AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 800V@150℃ 9A RDS(ON) (at VGS=10V) < 1.2Ω 100% UIS Tested 100% Rg Tested Top View TO-220 TO-263 D2PAK D TO-220F G D S AOT9N70 G D D S S G G AOTF9N70 S AOB9N70 Orderable Part Number Package Type Form Minimum Order Quantity AOT9N70 AOTF9N70 AOTF9N70L AOB9N70L TO-220 Pb Free TO-220F Pb Free TO-220F Green TO-263 Green Tube Tube Tube Tape & Reel 1000 1000 1000 800 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter AOT(B)9N70 Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=100°C C ID AOTF9N70 700 AOTF9N70L ±30 Units V V 9 9* 9* 5.8 5.8* 5.8* A IDM 33 Avalanche Current C IAR 3.2 A Repetitive avalanche energy C EAR 77 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C B Power Dissipation Derate above 25oC EAS dv/dt 154 5 50 mJ V/ns W Junction and Storage Temperature Range TJ, TSTG Pulsed Drain Current Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient A PD TL Symbol RθJA RθCS Maximum Case-to-sink Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.3.0: January 2015 236 1.8 0.4 -55 to 150 27.8 0.22 300 W/ oC °C °C AOT(B)9N70 65 AOTF9N70 65 AOTF9N70L 65 Units °C/W 0.5 0.53 -2.5 -4.5 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 700 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 800 V ID=250µA, VGS=0V 0.84 V/ oC VDS=700V, VGS=0V 1 VDS=560V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.5A gFS Forward Transconductance VDS=40V, ID=4.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.9 4.5 nΑ V 0.94 1.2 Ω 1 V Maximum Body-Diode Continuous Current 9 A Maximum Body-Diode Pulsed Current 33 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=560V, ID=9A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time 3 10 S 0.74 1085 1357 1630 pF 90 113 147 pF 6 7.4 11 pF 2 4 6 Ω 23 28.5 35 nC 5.5 6.8 8.2 nC 9.3 11.6 18 nC VGS=10V, VDS=350V, ID=9A, RG=25Ω 35 ns 61 ns 76 ns 48 IF=9A,dI/dt=100A/µs,VDS=100V ns 300 375 450 6 7.5 9 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=30mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: January 2015 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 18 100 10V VDS=40V 15 6.5V 9 10 ID(A) ID (A) 12 -55°C 6V 125°C 1 6 25°C 3 VGS=5.5V 0.1 0 0 5 10 15 20 25 2 30 4 VDS (Volts) Fig 1: On-Region Characteristics 8 10 VGS(Volts) Figure 2: Transfer Characteristics 3.0 Normalized On-Resistance 3 2.5 2.0 RDS(ON) (Ω) 6 VGS=10V 1.5 1.0 0.5 2.5 2 1.5 1 0.5 0 -100 0.0 0 4 8 12 16 VGS=10V ID=4.5A 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.2 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 25°C 1.0E-02 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev.3.0: January 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 1000 Capacitance (pF) VGS (Volts) Ciss VDS=560V ID=9A 12 9 6 Coss 100 10 3 Crss 0 1 0 5 10 15 20 25 30 35 40 0.1 Qg (nC) Figure 7: Gate-Charge Characteristics 100 RDS(ON) limited 100 100µs 1 DC 1ms 10ms 10µs RDS(ON) limited 10 10µs 100µs ID (Amps) ID (Amps) 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 10 1 1ms 10ms DC 0.1s 0.1 0.1 TJ(Max)=150°C TC=25°C 1s TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 VDS (Volts) 1000 1 10000 10 100 1000 10000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF9N70 (Note F) Figure 9: Maximum Forward Biased Safe Operating Area for AOT(B)9N70 (Note F) 10 100 RDS(ON) limited 8 10µs Current rating ID(A) 10 ID (Amps) 1 100µs 1ms 1 10ms DC 0.1s 0.1 1s TJ(Max)=150°C TC=25°C 6 4 2 0 0.01 1 10 100 1000 10000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOTF9N70L (Note F) Rev.3.0: January 2015 www.aosmd.com 0 25 50 75 100 125 150 TCASE (°C) Figure 12: Current De-rating (Note B) Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.53°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse Ton 0.01 T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOT(B)9N70 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF9N70 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM 0.01 Ton Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 T 0.01 0.1 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF9N70 L(Note F) Rev.3.0: January 2015 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.3.0: January 2015 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6