Datasheet

AOT9N70/AOTF9N70/AOB9N70
700V, 9A N-Channel MOSFET
General Description
Product Summary
The AOT9N70 & AOTF9N70 & AOB9N70 have been
fabricated using an advanced high voltage MOSFET
process that is designed to deliver high levels of
performance and robustness in popular AC-DC
applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
VDS
ID (at VGS=10V)
[email protected]
9A
RDS(ON) (at VGS=10V)
< 1.2Ω
100% UIS Tested
100% Rg Tested
Top View
TO-220
TO-263
D2PAK
D
TO-220F
G
D
S
AOT9N70
G
D
D
S
S
G
G
AOTF9N70
S
AOB9N70
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT9N70
AOTF9N70
AOTF9N70L
AOB9N70L
TO-220 Pb Free
TO-220F Pb Free
TO-220F Green
TO-263 Green
Tube
Tube
Tube
Tape & Reel
1000
1000
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT(B)9N70
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
TC=100°C
C
ID
AOTF9N70
700
AOTF9N70L
±30
Units
V
V
9
9*
9*
5.8
5.8*
5.8*
A
IDM
33
Avalanche Current C
IAR
3.2
A
Repetitive avalanche energy C
EAR
77
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
B
Power Dissipation
Derate above 25oC
EAS
dv/dt
154
5
50
mJ
V/ns
W
Junction and Storage Temperature Range
TJ, TSTG
Pulsed Drain Current
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
A,D
Maximum Junction-to-Ambient
A
PD
TL
Symbol
RθJA
RθCS
Maximum Case-to-sink
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.3.0: January 2015
236
1.8
0.4
-55 to 150
27.8
0.22
300
W/ oC
°C
°C
AOT(B)9N70
65
AOTF9N70
65
AOTF9N70L
65
Units
°C/W
0.5
0.53
-2.5
-4.5
°C/W
°C/W
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Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
700
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
800
V
ID=250µA, VGS=0V
0.84
V/ oC
VDS=700V, VGS=0V
1
VDS=560V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=4.5A
gFS
Forward Transconductance
VDS=40V, ID=4.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
3.9
4.5
nΑ
V
0.94
1.2
Ω
1
V
Maximum Body-Diode Continuous Current
9
A
Maximum Body-Diode Pulsed Current
33
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
±100
µA
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=560V, ID=9A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
3
10
S
0.74
1085
1357
1630
pF
90
113
147
pF
6
7.4
11
pF
2
4
6
Ω
23
28.5
35
nC
5.5
6.8
8.2
nC
9.3
11.6
18
nC
VGS=10V, VDS=350V, ID=9A,
RG=25Ω
35
ns
61
ns
76
ns
48
IF=9A,dI/dt=100A/µs,VDS=100V
ns
300
375
450
6
7.5
9
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: January 2015
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
100
10V
VDS=40V
15
6.5V
9
10
ID(A)
ID (A)
12
-55°C
6V
125°C
1
6
25°C
3
VGS=5.5V
0.1
0
0
5
10
15
20
25
2
30
4
VDS (Volts)
Fig 1: On-Region Characteristics
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
3.0
Normalized On-Resistance
3
2.5
2.0
RDS(ON) (Ω)
6
VGS=10V
1.5
1.0
0.5
2.5
2
1.5
1
0.5
0
-100
0.0
0
4
8
12
16
VGS=10V
ID=4.5A
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.2
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
25°C
1.0E-02
0.9
1.0E-03
0.8
-100
1.0E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
Rev.3.0: January 2015
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
1000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=560V
ID=9A
12
9
6
Coss
100
10
3
Crss
0
1
0
5
10
15
20
25
30
35
40
0.1
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
RDS(ON)
limited
100
100µs
1
DC
1ms
10ms
10µs
RDS(ON)
limited
10
10µs
100µs
ID (Amps)
ID (Amps)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
1
1ms
10ms
DC
0.1s
0.1
0.1
TJ(Max)=150°C
TC=25°C
1s
TJ(Max)=150°C
TC=25°C
0.01
0.01
1
10
100
VDS (Volts)
1000
1
10000
10
100
1000
10000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF9N70 (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT(B)9N70 (Note F)
10
100
RDS(ON)
limited
8
10µs
Current rating ID(A)
10
ID (Amps)
1
100µs
1ms
1
10ms
DC
0.1s
0.1
1s
TJ(Max)=150°C
TC=25°C
6
4
2
0
0.01
1
10
100
1000
10000
VDS (Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOTF9N70L (Note F)
Rev.3.0: January 2015
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0
25
50
75
100
125
150
TCASE (°C)
Figure 12: Current De-rating (Note B)
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.53°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
Single Pulse
Ton
0.01
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT(B)9N70 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF9N70 (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PDM
0.01
Ton
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
T
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF9N70 L(Note F)
Rev.3.0: January 2015
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.3.0: January 2015
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6
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