UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremely gate charge with a 25V gate rating The UTC UTT4815 is ESD protected and universally applied in PWM or used as a load switch. FEATURES * VDS(V)= -30V * ID= -8A, (VGS= -20V) * RDS(ON) < 18mΩ @(VGS = -20V) RDS(ON) < 20mΩ @(VGS = -10V) SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free UTT4815L-S08-R UTT4815G-S08-R SOP-8 UTT4815L-S08-T UTT4815G-S08-T SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 S S 2 S S Pin Assignment 3 4 5 6 7 S G D D D S G D D D 8 D D Packing Tape Reel Tube 1 of 5 QW-R502-564.a UTT4815 Preliminary Power MOSFE PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-564.a UTT4815 Preliminary Power MOSFE ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER RATINGS UNIT -30 V ±25 Continuous TA = 25°C -8 ID (Note 2) Drain Current A TA = 70°C -6.9 Pulsed (Note 3) IDM -40 TA = 25°C 2 Power Dissipation (Note 2) PD W TA = 70°C 1.44 Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+ 150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. 3. Repetitive rating, pulse width limited by junction temperature. Drain-Source Voltage Gate-Source Voltage SYMBOL VDSS VGSS THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT Junction to Ambient (Note 1) θJA 110 °C/W Note: 1. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-564.a UTT4815 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance IGSS TEST CONDITIONS VGS =0 V, ID =-250µA VDS =-24V, VGS =0 V VGS=+25V, VDS=0V VGS=-25V, VDS=0V VGS(TH) VDS =VGS, ID =-250 µA VGS =-20V, ID =-8A VGS =-20V, ID =-8A, RDS(ON) TJ =125°C VGS =-10V, ID =-8A VGS =-4.5V, ID =-5A ID(ON) VGS=-10V, VDS=-5V On State Drain Current DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VDS =-15 V, VGS =0V, f=1MHz Reverse Transfer Capacitance CRSS Gate Resistance Rg VDS =0V, VGS =0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge QG VDS =-15V, VGS =-10V, ID=-8A Gate Source Charge QGS (Note 1,2) Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDS =-15V, VGS =-10V, Turn-OFF Delay Time tD(OFF) RL=1.8Ω, RGEN=3Ω(Note 1,2) Turn-OFF Fall-Time tF SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=-1A, VGS=0V Maximum Continuous Drain-Source Diode IS Forward Current Body Diode Reverse Recovery Time tRR IF=-8 A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR IF=-8A,dI/dt=100A/μs(Note 1) Note: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX -30 -1 +1 -1 -1 UNIT V µA µA -2.8 14.1 -3 18 V mΩ 19 24 mΩ 16.2 37 20 mΩ mΩ A -40 2330 2900 480 320 6.8 10 41 10 12 13 12 51 30.5 28 20.5 pF Ω 52 nC ns -1 V -2.6 A 35 ns nC 4 of 5 QW-R502-564.a UTT4815 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-564.a