IRFR9110, IRFU9110
Data Sheet
3.1A, 100V, 1.200 Ohm, P-Channel Power
MOSFETs
These are advanced power MOSFETs designed, tested, and
guaranteed to withstand a specific level of energy in the
avalanche breakdown mode of operation. These are
P-Channel enhancement mode silicon gate power
field-effect transistors designed for applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
July 1999
4001.3
Features
• 3.1A, 100V
• rDS(ON) = 1.200Ω
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Formerly developmental type TA17541.
D
Ordering Information
PART NUMBER
File Number
PACKAGE
BRAND
IRFR9110
TO-252AA
IF9110
IRFU9110
TO-251AA
IF9110
G
S
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in the tape and reel, i.e., IRFR91109A.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
DRAIN (FLANGE)
4-77
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRFR9110, IRFU9110
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFR9110, IRFU9110
-100
-100
±20
3.1
Refer to Peak Current Curve
Refer to UIS Curve
25
0.2
-55 to 150
UNITS
V
V
V
A
300
260
oC
oC
W
W/oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-100
-
-
V
-2.0
-
-4.0
V
-
-
-1
µA
-
-
-50
µA
VGS = ±20V
-
-
100
nA
Drain to Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
Gate to Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250µA
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
IDSS
IGSS
VDS = -100V,
VGS = 0V
TC = 25oC
TC = 150oC
On Resistance
rDS(ON)
ID = 1.9A, VGS = -10V
-
-
1.200
Ω
Turn-On Time
tON
VDD = -50V, ID = 4A
RL = 11Ω, VGS = -10V
RGS = 24Ω
-
-
50
ns
-
10
-
ns
tr
-
27
-
ns
td(OFF)
-
15
-
ns
tf
-
17
-
ns
tOFF
-
-
50
ns
-
-
8.7
nC
-
-
4.1
nC
-
-
2.2
nC
-
290
-
pF
-
94
-
pF
-
18
-
pF
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Qg
Gate to Drain Charge
Qgd
Gate to Source Charge
Qgs
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 to -10V
VDD = -80V,
ID = 3.1A,
RL = 25.8Ω
VDS = -25V, VGS = 0V
f = 1MHz
Thermal Resistance Junction to Case
RθJC
-
-
5.00
oC/W
Thermal Resistance Junction to Ambient
RθJA
-
-
100
oC/W
MIN
TYP
MAX
UNITS
ISD = -3.1A
-
-
-5.5
V
ISD = -4.0A, dISD/dt = -100A/µs
-
105
160
ns
0.51
1.0
µC
Source to Drain Diode Ratings and Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
VSD
trr
Reverse Recovery Charge
QRR
4-78
TEST CONDITIONS
IRFR9110, IRFU9110
Typical Performance Curves
Unless Otherwise Specified
-3.5
-3.0
1.0
ID , DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
25
50
75
100
TC , CASE TEMPERATURE (oC)
125
25
150
50
75
100
125
150
TC , CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
ZθJC , TRANSIENT
THERMAL IMPEDANCE
0.5
1
0.2
0.1
0.1
PDM
0.05
0.02
0.01
t1
t2
SINGLE PULSE
0.01
10-5
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
100
101
t 1, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
-30
TC = 25oC, TJ = MAX RATED
ID , DRAIN CURRENT (A)
-10
100µs
1ms
-1
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
-0.1
-1
100ms
DC
VDSS MAX = -100V
-10
-100
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
4-79
IDM , PEAK CURRENT CAPABILITY (A)
-20
VGS = -20V
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
150 – T C
I = I 25 -----------------------
125
-10
VGS = -10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-1
10-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
TC = 25oC
100
FIGURE 5. PEAK CURRENT CAPABILITY
101
IRFR9110, IRFU9110
-10
EAS = 140mJ
CONDITIONS:
VDD = -25V, IAS = -3.1A,
L = 21mH, STARTING TJ = 25oC
-7.75
IAS , AVALANCHE CURRENT (A)
Unless Otherwise Specified (Continued)
STARTING TJ = 25oC
STARTING TJ = 150oC
If R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R) In [(IAS * R) / (1.3 RATED BVDSS - VDD +1]
-1
0.01
-6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TC = 25oC
-5
ID, DRAIN CURRENT (A)
Typical Performance Curves
VGS = -8V
VGS = -20V
-4
-3
VGS = -7V
-2
VGS = -6V
0
10
0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
ID(ON), ON STATE DRAIN CURRENT (A)
-6
25oC
-4
150oC
-2
-4
-6
-8
-10
1.0
0.5
0
40
80
120
160
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = -10V, ID = -3.1A
1.5
1.0
THRESHOLD VOLTAGE
VGS = VDS , ID = -250µA
NORMALIZED GATE
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
-40
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. TRANSFER CHARACTERISTICS
2.0
-10
1.5
VGS, GATE TO SOURCE VOLTAGE (V)
2.5
-8
VGS = VDS , ID = -250µA
0.0
-80
0
-2
-6
2.0
-55oC
0
-4
FIGURE 7. SATURATION CHARACTERISTICS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = -15V
-8
-2
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
-10
VGS = -5V
VGS = -4.5V
-1
0.1
1
TAV, TIME IN AVALANCHE (ms)
VGS = -10V
1.5
1.0
0.5
0.5
0.0
-80
-40
0
40
80
120
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-80
180
0.0
-80
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
IRFR9110, IRFU9110
Typical Performance Curves
Unless Otherwise Specified (Continued)
VDS , DRAIN TO SOURCE VOLTAGE (V)
CISS
C, CAPACITANCE (pF)
-10.0
-100
300
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
200
COSS
100
CRSS
0
0
-5
-10
-15
-20
VDD = BVDSS
VDD = BVDSS
-75
-7.5
RL = 32.2Ω
IG(REF) = -1.45mA
VGS = -10V
-50
-5.0
0.75 BVDSS 0.75 BVDSS
0.50 BVDSS 0.50 BVDSS
0.25 BVDSS 0.25 BVDSS
-25
0
-25
20
VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
IG(REF)
t, TIME (µs)
IG(ACT)
-2.5
80
0.0
IG(REF)
IG(ACT)
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
VDS
tAV
L
0
VARY tP TO OBTAIN
REQUIRED PEAK IAS
-
RG
+
0V
VGS
VDD
DUT
VDD
tP
IAS
IAS
VDS
tP
0.01Ω
BVDSS
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(OFF)
td(ON)
tr
0
RL
DUT
VGS
RG
VDD
+
tf
10%
10%
VDS
VGS
0
90%
90%
10%
50%
50%
PULSE WIDTH
90%
FIGURE 16. SWITCHING TIME TEST CIRCUIT
4-81
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
VGS , GATE TO SOURCE VOLTAGE (V)
400
IRFR9110, IRFU9110
PSPICE Electrical Model
.SUBCKT IRFU9220 2 1 3
REV 9/6/94
CA 12 8 723e-12
CB 15 14 733e-12
CIN 6 8 517e-12
RLDRAIN
DPLCAP
5
DRAIN
2
10
DBODY 5 7 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
LDRAIN
RSCL2
EBREAK 7 11 17 18 -244.4
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
ESG
+
RLGATE
RGATE
GATE
1
LDRAIN 2 5 1e-9
LGATE 1 9 2.609e-9
LSOURCE 3 7 2.609e-9
DBREAK
ESCL
50
6
8
RDRAIN
-
-
18
20 8
9
5
51
EVTO
+
IT 8 17 1
RSCL1
+ 51
16
VTO +
21
6
11
+
EBREAK
17
18
MOS2
DBODY
MOS1
LGATE
RIN
CIN
RLSOURCE
MOS1 16 6 8 8 MOSMOD M=0.99
MOS2 16 21 8 8 MOSMOD M=0.01
8
RSOURCE
7
3
SOURCE
LSOURCE
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 1.194
RGATE 9 20 2.17
RIN 6 8 1e9
RLDRAIN 2 5 10
RLGATE 1 9 26.09
RLSOURCE 3 7 26.09
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 90.1e-3
RVTO 18 19 RVTOMOD 1
S1A
12
S2A
13
8
S1B
14
13
13
15
17
RBREAK
S2B
18
RVTO
CB
CA
IT
+
6
EGS
8
-
+
EDS
-
14
5
8
19
-
VBAT
+
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.77
ESCL 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/4.6,6))}
.MODEL DBDMOD D (IS=2.56e-14 RS=8.09e-2 TRS1=-2.45e-3 TRS2=-1.33e-5 CJO=4.21e-10 TT=1.17e-7)
.MODEL DBKMOD D (RS=5.07 TRS1=-1.05e-3 TRS2=1.28e-5)
.MODEL DPLCAPMOD D (CJO=170e-12 IS=1e-30 N=10)
.MODEL MOSMOD PMOS (VTO=-3.58 KP=1.38 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.1e-3 TC2=-2.73e-6)
.MODEL RDSMOD RES (TC1=6.95e-3 TC2=2.23e-5)
.MODEL RSCLMOD RES (TC1=2.40e-3 TC2=-1.5e-5)
.MODEL RVTOMOD RES (TC1=-3.27e-3 TC2=-1.33e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=5.29 VOFF=3.29)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=3.29 VOFF=5.29)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.1 VOFF=-4.9)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-4.9 VOFF=0.1)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature
Options; written by William J. Hepp and C. Frank Wheatley.
4-82
IRFR9110, IRFU9110
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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4-83
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