Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UP3855
PNP SILICON TRANSISTOR
PNP MEDIUM POWER LOW
SATURATION TRANSISTOR

DESCRIPTION
The UTC UP3855 is a transistor with low saturation voltage. It
provides customers with very low on-state losses that makes it
ideal for applications, such as driving and power management
functions and DC-DC circuits.

FEATURES
* Extremely low saturation voltages
* Peak current up to 10A
* 4A continuous current

ORDERING INFORMATION
Ordering Number
Note:

UP3855G-AA3-R
Pin Assignment:
B: Base C: Collector
Package
SOT-223
E: Emitter
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
MARKING
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Copyright © 2015 Unisonic Technologies Co., Ltd
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UP3855

PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 1)
Peak Pulse Current
RATINGS
UNIT
-180
V
-140
V
-7
V
-4
A
-10
A
3.0 (Note 1)
Power Dissipation
PD
W
1.6 (Note 2)
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
IC
ICM
THERMAL RESISTANCE
PARAMETER
RATINGS
UNIT
42 (Note 1)
Junction to Ambient
θJA
°C/W
78 (Note 2)
Notes: 1. For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz
copper, in still air conditions.
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz
copper, in still air conditions.

SYMBOL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
VCBO
IC=-100μA
Collector-Emitter Breakdown Voltage
VCER
IC=-1μA, RB≤1kΩ
Collector-Emitter Breakdown Voltage
VCEO
IC=-10mA (Note 1)
Emitter-Base Breakdown Voltage
VEBO
IE=-100μA
VCB=-150V
Collector Cut-Off Current
ICBO
VCB=-150V, TA=100°C
VCB=-150V,
Collector Cut-Off Current
ICER
R≤1kΩ
TA=100°C
Emitter Cut-Off Current
IEBO
VEB=-6V
IC=-0.1A, IB=-5mA
Collector-Emitter Saturation Voltage
IC=-0.5A, IB=-50mA
VCE(SAT)
(Note 1)
IC=-1A, IB=-100mA
IC=-3A, IB=-300mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=-3A, IB=-300mA(Note 1)
Base-Emitter Turn-On Voltage
VBE(ON) IC=-3A, VCE=-5V (Note 1)
IC=-10mA, VCE=-5V
Static Forward Current Transfer
IC=-1A, VCE=-5V
hFE
Ratio (Note 1)
IC=-3A, VCE=-5V
IC=-10A, VCE=-5V
IC=-100mA, VCE=-10V
Transition Frequency
fT
f=50MHz
Output Capacitance (Note 1)
COBO
VCB=-10V, f=1MHz
tON
IC=-1A, VCC=-50V,
Switching Times
IB1=-IB2=-100mA
tOFF
Note: 1. Measured under pulsed conditions. Pulse width≤300μs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
-180
-180
-140
-7.0
TYP
-200
-200
-160
-8.0
<1
<1
100
100
45
<1
-40
-55
-85
-275
-940
-830
225
200
100
5
MAX
-20
-0.5
-20
-0.5
-10
-60
-80
-120
-360
-1040
-930
UNIT
V
V
V
V
nA
μA
nA
μA
nA
mV
mV
mV
mV
mV
mV
300
120
MHz
33
150
750
pF
ns
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PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Power Dissipatio vs Ambient Temperature
hFE vs. IC
100
VCE=5V
10
1ms
1
10ms
100ms
0.1
1.0s
DC
0.01
250
250
1.4
300μs
Normalised Gain
Collector Current, -IC (A)
1.6
TA=25ºC
0.1
55ºC
1.2
200
25ºC
1.0
150
0.8
100
0.6
50
0
0.4
10m
1m
1
10
100
Collector-Emitter Voltage,-VCE(V)
Typical Gain(hFE)

100m
1
Collector Current, -IC (A)
VBE(SAT) vs. IC
VCE(SAT) vs. IC
1.4
2.0
IC / IB=10
IC / IB=10
55°C
1.2
1.0
25°C
-VBE(SAT) (V)
-VCE(SAT) (V)
1.5
0.5
0.0
1.0
0.8
0.6
25°C
0.4
55°C
1
100m
1m
10m
100m
Collector Current, -IC (A)
Collector Current, -IC (A)
VBE(ON) vs. IC
VCE(SAT) vs. IC
1
VCE=5V
1
TA=25°C
1.4
-VCE(SAT)(V)
-VBE(ON) (V)
1.2
1.0
0.8
0.6
25°C
0.4
55°C
100m
IC / IB=50
IC / IB=20
IC / IB=10
10m
1m
10m
100m
1
Collector Current, -IC (A)
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1m
10m
100m
1
Collector Current, -IC (A)
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PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Cont.)

Collector-Emitter Saturation Voltage vs.
Collector Current
DC Current Gain vs. Collector Current
300
2
VCE= -5V
DC Current Gain , hFE
250
Collector-Emitter Saturation
Voltage, - VCE(SAT) (V)
IC/IB=10
55°C
200
25°C
150
100
50
0
1.5
1
0.5
25°C
0.01
0.1
1
0
0.1
10
Collector Current, -IC (A)
Base-Emitter Saturation Voltage vs.
Collector Current
Base-Emitter Turn-On, - VBE(ON) (V)
Base-Emitter Saturation Voltage,
- VBE(SAT) , (V)
2.0
IC/IB=10
1.5
1.0
25°C
55°C
0.5
0.1
10
1
Collector Current, -IC (A)
0
55°C
Base-Emitter Turn-On vs.
Collector Current
2.0
VCE= -5V
1.5
1.0
25°C
55°C
0.5
0
1
0.05
Collector Current, -IC (A)
0.5
5
Collector Current , -Ic(A)
Safe Operation Area
Collector Current, -IC (A)
100
10
300µs
1ms
1
10ms
100ms
1.0s
0.1
DC
0.01
TA=25°C
0.1
1
10
100
1000
Collector Emitter Voltage, -VCE (V)
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www.unisonic.com.tw
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UP3855
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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