UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP TRANSISTOR LOW VCE(SAT) PNP SILICON POWER TRANSISTORS FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A) * High collector current capability(1.5A) * High peak pulse current up to 6A * High collector current gain ORDERING INFORMATION Ordering Number Package UP2518G-AE3-R SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MARKING Y18G www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-083.C UP2518 Preliminary PNP TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta= 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current (Note 2) IPEAK -6 A Continuous Collector Current IC -1.5 A Base Current IB -500 mA Power Dissipation (Note 3) TA=25°C PD 625 mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55~+150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width=300µs. Duty cycle≤2%. 3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm. ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO ICES TEST CONDITIONS IC= -100µA IC= -10mA (Note) IE= -100µA VCB= -15V VEB= -4V VCES= -15V IC= -100mA, IB= -10mA (Note) Collector-Emitter Saturation Voltage VCE(SAT) IC= -1A, IB= -20mA (Note) IC= -1.5A, IB= -50mA (Note) Base-Emitter Saturation Voltage VBE(SAT) IC= -1.5A, IB= -50mA (Note) Base-Emitter Turn-On Voltage VBE(ON) VCE= -2V, IC= -2A (Note) VCE= -2V, IC= -10mA (Note) VCE= -2V, IC= -100mA (Note) DC Current Gain hFE VCE= -2V, IC= -2A, (Note) VCE= -2V, IC= -4A, (Note) VCE= -2V, IC= -6A, (Note) Transition Frequency fT VCE =-10V , IC= -50mA, f=100MHz Output Capacitance COB VCB= -10V, f=1MHz Turn-On Time t(ON) VCC= -10V, IC= -1A IB1= IB2= -20mA Turn-Off Time t(OFF) Note: Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -20 -20 -5 300 300 150 35 15 150 TYP -65 -55 -8.8 -16 -130 -145 -0.87 -0.81 475 450 230 70 30 180 21 40 670 MAX -100 -100 -100 -40 -200 -220 -1.0 -1.0 30 UNIT V V V nA nA nA mV mV mV V V MHZ pF ns ns 2 of 4 QW-R206-083.C UP2518 Preliminary PNP TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-083.C UP2518 Preliminary PNP TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-083.C