Datasheet

AOD466
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD466 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 25V
ID = 30A (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 10V)
RDS(ON) < 24 mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Top View
D
Bottom View
D
G
S
S
G
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Avalanche Current
C
C
Repetitive avalanche energy 0.1mH
C
TC=25°C
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
Units
V
±20
V
30
TC=100°C
Pulsed Drain Current
Maximum
25
TA=70°C
25
IAR
20
A
20
mJ
70
EAR
30
PD
W
15
2.5
PDSM
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
B
Steady-State
Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
A
ID
IDM
W
1.6
-55 to 175
Symbol
RθJA
RθJC
Typ
15
41
3.6
°C
Max
20
50
5
Units
°C/W
°C/W
°C/W
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AOD466
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250uA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250μA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
70
VGS=10V, ID=30A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
IS=1A, VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=30A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
V
100
nA
1.8
2.5
V
11.1
14
A
15.5
19
mΩ
24
mΩ
1
V
25
A
1000
pF
30
0.74
830
VGS=0V, VDS=12.5V, f=1MHz
μA
5
VGS(th)
VSD
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
25
VDS=20V, VGS=0V
IGSS
RDS(ON)
Typ
S
224
pF
127
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=12.5V, ID=30A
pF
0.93
1.5
Ω
15.3
19
nC
7.4
9
nC
Qgs
Gate Source Charge
2.7
nC
Qgd
Gate Drain Charge
4.3
nC
tD(on)
Turn-On DelayTime
8
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=10V, VDS=12.5V,
RL=0.42Ω, RGEN=3Ω
IF=30A, dI/dt=100A/μs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/μs
11.7
ns
30
ns
11
ns
23.5
30
12.8
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1 ST 2008).
Rev1: Sep. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
80
VDS=5V
10V
6V
60
30
ID(A)
ID (A)
4.5V
40
125°C
20
25°C
10
20
VGS=3V
0
0
0
1
2
3
4
2
5
2.5
3.5
4
4.5
5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
25
1.6
Normalized On-Resistance
VGS=4.5V
20
RDS(ON) (mΩ)
3
15
10
VGS=10V
VGS=10V
ID=30A
1.4
1.2
VGS=4.5V
ID=20A
1
5
0
5
10
15
20
25
30
35
40
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
40
1.0E+02
35
1.0E+01
ID=30A
125°C
1.0E+00
25
IS (A)
RDS(ON) (mΩ)
30
125°C
20
1.0E-01
1.0E-02
25°C
1.0E-03
1.0E-04
15
25°C
10
2.00
1.0E-05
4.00
6.00
8.00
10.00
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
VDS=12.5V
ID=30A
1200
Capacitance (pF)
VGS (Volts)
8
6
4
1000
Ciss
800
600
400
Coss
200
2
Crss
0
0
0
0
2
4
6
8
10
12
14
16
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
200
RDS(ON)
limited
10μs
Power (W)
ID (Amps)
DC
1ms
1
0.1
1
120
80
40
TJ(Max)=175°C, TA=25°C
0.1
TJ(Max)=175°C
TC=25°C
160
100μs
10
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
0.00001
Ton
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOD466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
tA =
30
L⋅ ID
30
BV − VDD
Power Dissipation (W)
ID(A), Peak Avalanche Current
35
25
20
15
TA=25°C
10
25
20
15
10
5
5
0.00001
0
0.0001
0.001
0
25
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
35
50
TA=25°C
30
25
Power (W)
Current rating ID(A)
40
20
15
30
20
10
10
5
0
0.0001 0.001
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
ZθJA Normalized Transient
Thermal Resistance
10
175
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
Single Pulse
0.0001
0.001
0.01
0.1
PD
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AOD466
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
Rg
-
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
Vgs
Vgs
+ Vdd
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Isd
L
Vgs
Ig
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+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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