Datasheet

AOD486A
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD486A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge.This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 40V
ID = 50 A (VGS = 10V)
RDS(ON) < 9.8 mΩ (VGS = 10V)
RDS(ON) < 13 mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen Free*
ESD Protected!
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Top View
D
D
Bottom View
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current G
TC=25°C
Pulsed Drain Current
ID
IDM
C
C
Repetitive avalanche energy L=0.3mH
C
TC=25°C
Power Dissipation
B
Power Dissipation
A
TA=25°C
V
Junction and Storage Temperature Range
A
100
IAR
30
A
EAR
135
mJ
50
2
W
1.3
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
25
PDSM
TA=70°C
Alpha & Omega Semiconductor, Ltd.
±20
36
PD
TC=100°C
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Case B
Units
V
50
TC=100°C
Avalanche Current
Maximum
40
RθJA
RθJC
Typ
17.4
45
1.2
°C
Max
30
60
3
Units
°C/W
°C/W
°C/W
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AOD486A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250μA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250μA
1.75
ID(ON)
On state drain current
VGS=10V, VDS=5V
100
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=5A
gFS
Forward Transconductance
IS=1A, VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
V
±100
µA
2
3
V
8.1
9.8
12.15
16
10.8
13
mΩ
1
V
50
A
1920
pF
A
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
mΩ
47
0.76
1600
VGS=0V, VDS=20V, f=1MHz
μA
5
IGSS
VSD
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
40
VDS=40V, VGS=0V
VGS(th)
RDS(ON)
Typ
S
320
pF
100
pF
3.4
Ω
22
nC
10.5
nC
Qgs
Gate Source Charge
4.2
nC
Qgd
Gate Drain Charge
4.8
nC
tD(on)
Turn-On DelayTime
6.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
12.5
ns
33
ns
16
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/μs
31
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/μs
33
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The package is limited to a maximum of 25A continuous current.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev2: Sep. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD486A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
80
-40°C
VDS=5V
5V
25°C
80
4V
125°C
60
ID(A)
ID (A)
60
40
40
VGS=3.5V
20
20
VGS=3V
-40°C
125°C
25°C
0
0
0
1
2
3
4
2
5
2.5
3
3.5
14
1.6
Normalized On-Resistance
12
RDS(ON) (mΩ)
4.5
10
VGS=10V
8
6
0
5
10
15
20
25
5
5.5
500
150
60
VGS=4.5V
30
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=5A
1
0.8
0.6
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
40
ID=20A
35
1.0E+00
30
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ)
4
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
25
1.0E-02
125°C
20
1.0E-03
-40°C
15
1.0E-04
25°C
10
25°C
1.0E-05
5
0.0
2
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD486A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
10
VDS=20V
ID=20A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1600
1200
800
Coss
Crss
2
400
0
0
4
8
12
16
20
0
24
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
100μs
DC
1ms
1.0
TJ(Max)=175°C
TC=25°C
20
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
40
500
150
60
TJ(Max)=175°C
Tc=25°C
120
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3°C/W
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
15
160
Power (W)
ID (Amps)
100μ
10.0
0.1
10
200
RDS(ON)
limited
100.0
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD486A
110
55
100
50
90
45
Power Dissipation (W)
ID(A), Peak Avalanche Current
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
70
TA=25°C
60
50
TA=150°C
40
30
20
10
40
35
30
25
20
15
10
5
0
0
0.000001
0.00001
0.0001
0.001
0
25
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
100
125
150
175
500
150
60
100
90
50
TA=25°C
80
70
40
Power (W)
Current rating ID(A)
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
60
30
20
60
50
40
30
20
10
10
0
0
0
25
50
75
100
125
150
0.001
175
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note B)
ZθJA Normalized Transient
Thermal Resistance
50
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOD486A
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
Rg
-
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
Vgs
Vgs
+ Vdd
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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