AOS Semiconductor Product Reliability Report AOH3106, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AOH3106. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOH3106 passes AOS quality and reliability requirements. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOH3106 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Detailed information refers to datasheet. II. Die / Package Information: AOH3106 Standard sub-micron 100V N channel Package Type SOT223 Lead Frame Cu Alloy Die Attach Ag epoxy Bonding Au wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Process Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AOH3106 Test Item Test Condition Time Point Lot Attribution Total Sample size Number of Failures MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c HTGB - 3 lots 495pcs 0 JESD22A113 Temp = 150 °c, Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs 308pcs 0 1 lot 3 lots JESD22A108 Temp = 150 °c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 77pcs / lot 308pcs 0 1 lot 3 lots JESD22A108 130 +/- 2°°c, 85%RH, 33.3 psi, Vgs = 100% of Vgs max 121°°c, 29.7psi, RH=100% 100 hrs (Note A*) 3 lots 77pcs / lot 165pcs 0 JESD22A110 96 hrs (Note A*) 3 lots 55pcs / lot 165pcs 0 JESD22A102 -65°°c to 150°°c, air to air 250 / 500 cycles (Note A*) 3 lots 55pcs / lot 165pcs 0 JESD22A104 (Note A*) 55pcs / lot (Note A*) HTRB HAST Pressure Pot Temperature Cycle Standard Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 7 MTTF = 17349 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOH3106). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x77x500+6x77x1000) x258] = 7 9 8 MTTF = 10 / FIT =1.52 x 10 hrs = 17349 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 -5 K = Boltzmann’s constant, 8.617164 X 10 eV / K