Datasheet

UNISONIC TECHNOLOGIES CO.,LTD
2SC3647
NPN SILICON TRANSISTOR
HIGH-VOLTAGE SWITCHING
APPLICATIONS
 FEATURES
* High breakdown voltage and large current capacity
* Fast switching time
* Very small size marking it easy to provide high – density,
small-sized hybrid ICs

SOT-89
ORDERING INFORMATION
Ordering Number
2SC3647G-x-AB3-R
Note: Pin Assignment: B: Base C: Collector

1
Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
E: Emitter
MARKING
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
NPN SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
120
V
Collector to Emitter Voltage
VCEO
100
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
2
A
Collector Current (Pulse)
ICP
3
A
Collector Dissipation
PC
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
DC Current Gain
Turn-ON Time
Storage Time
Fall Time
Gain-Bandwidth Product
■
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
VBE(SAT)
Cob
hFE
tON
tSTG
tF
fT
TEST CONDITIONS
IC = 10μA, IE =0
IC = 1mA, RBE =∞
IE = 10μA, IC=0
VCB = 100V, IE =0
VEB = 4V, IC =0
IC = 1A, IB = 100mA
IC = 1A, IB = 100mA
VCB = 10V, f =1MHz
VCE = 5V, IC = 100mA
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VCE = 10V, IC = 100mA
CLASSIFICATION OF hFE
RANK
RANGE
R
100 ~ 200
UNISONIC TECHNOLOGIES CO., LTD
5
MIN TYP MAX UNIT
120
V
100
V
6
V
100 nA
100 nA
0.13 0.4
V
0.85 1.2
V
16
pF
100
400
80
ns
1000
ns
50
ns
120
MHz
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S
140 ~ 280
T
200 ~ 400
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
NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
PW=20µS
DC≤1%
IB1
RB
INPUT
50Ω
RL
IB2
VR
+
100µF
-5V
+
470µF
50V
10IB1= -10IB2=IC=0.7A
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■
NPN SILICON TRANSISTOR
TYPICAL CHARACTERICS
IC - VBE
2.4
hFE - IC
1000
VCE = 5V
VCE = 5V
7
2.0
5
1.6
3
2
1.2
Ta = 75°C
25°C
-25°C
100
0.8
7
0.4
0.2
0.8
0.4
0.6
1.0
Base to Emitter Voltage, VBE (V)
3
1.2
UNISONIC TECHNOLOGIES CO., LTD
5
7 0.01 2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC (A)
2 3
Collector to Emitter Saturation Voltage,
VCE (sat) (mV)
0
Output Capacitance, cob (pF)
0
5
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■
NPN SILICON TRANSISTOR
TYPICAL CHARACTERICS(Cont.)
VBE (sat) - IC
10
IC/IB = 10
7
5
3
2
1.0
Ta = -25°C
7
5
25°C
3
7 0.01
75°C
2 3 5 7 0.1 2 3 5 7 1.0
Collector Current, IC (A)
ASO
10
DC
0m
1m
10 s
m
s
s
Op
er
at
ion
0.1
7
5
3
2 One Pulse - Ta = 25°C
0.01 Mounted on ceramic board
7 (250mm × 0.8mm)
5
2 3 5 7 100
5 7 1.0 2 3 5 7 10
Collector to Emitter Voltage, VCE (V)
PC - Ta
1.8
Collector Dissipation, Pc (W)
2 3
5 I
CP
3 I
C
2
1.0
7
5
3
2
1.6
1.4
1.2
1.0
0.8
0.6
Infin
ite h
eat s
ink
0.4
0.2
0
0
20
40
60
80
100
120 140 160
Ambient Temperature, Ta (°C)
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