Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SD1060/A
NPN SILICON TRANSISTOR
NPN PLANAR SILICON
TRANSISTOR

FEATURES
* Low collector-to-emitter saturation voltage:
VCE(SAT)=0.4V max / IC=3A, IB=0.3A

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SD1060G-x-AB3-R
SOT-89
2SD1060AG-x-AB3-R
SOT-89
2SD1060L-x-TA3-T
2SD1060G-x-TA3-T
TO-220
2SD1060L-x-TF3-T
2SD1060G-x-TF3-T
TO-220F
2SD1060L-x-TF1-T
2SD1060G-x-TF1-T
TO-220F1
2SD1060L-x-TF2-T
2SD1060G-x-TF2-T
TO-220F2
2SD1060L-x-TM3-T
2SD1060G-x-TM3-T
TO-251
2SD1060L-x-TN3-R
2SD1060G-x-TN3-R
TO-252
2SD1060L-x-T60-K
2SD1060G-x-T60-K
TO-126
2SD1060L-x-T92-B
2SD1060G-x-T92-B
TO-92
2SD1060L-x-T92-K
2SD1060G-x-T92-K
TO-92
Note: Pin assignment: E: Emitter
B: Base
C: Collector
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Copyright © 2015 Unisonic Technologies Co., Ltd
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tube
Tube
Tube
Tube
Tube
Tape Reel
Bulk
Tape Box
Bulk
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2SD1060/A

NPN SILICON TRANSISTOR
MARKING
PACKAGE
MARKING
2SD1060
2SD1060A
SOT-89
TO-220
TO-220F
TO-220F1
TO-220F2
TO-251
TO-252
-
TO-126
-
TO-92
-
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2SD1060/A

NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
2SD1060
60
V
Collector to Base Voltage
VCBO
2SD1060A
100
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
5
A
Collector Current (Pulse)
ICP
9
A
SOT-89
500
mW
TO-220/TO-220F
2
W
TO-220F1/TO-220F2
Collector Dissipation
PC
TO-126/TO-251
1
W
TO-252
TO-92
625
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-to-Base Breakdown Voltage
BVCBO
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(SAT)
tON
tSTG
tF
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Turn-ON Time
Storage Time
Fall Time

TEST CONDITIONS
2SD1060
IC =1mA, IE=0
2SD1060A
IC=1mA, RBE =
IC =0, IE=1mA
VCB=40V, IE=0
VEB=4V, IC=0
VCE=2V, IC=1A
VCE=2V, IC=3A
VCE =5V, IC =1A
VCB =10V, f=1MHz
IC=3A, IB=0.3A
See specified test circuit
See specified test circuit
See specified test circuit
MIN
60
100
50
6
TYP
MAX
0.1
0.1
360
70
30
30
100
0.4
0.1
1.4
0.2
UNIT
V
V
V
V
mA
mA
MHZ
pF
V
μs
μs
μs
CLASSIFICATION of hFE1
RANK
RANGE
Q
70-140
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
R
100-200
S
180-360
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
NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
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TYPICAL CHARACTERISTICS
Collector-Emitter Saturation Voltage vs.
Collector Current
10
TA =8
0°C
=8
TA
10
IC/IB=20
5
-20°C
0°C
25°C
Collector Current, IC (A)
Collector-Emitter Saturation Voltage,
VCE (SAT) (V)
Collector Current, IC (A)
500m
A
A A
0m m mA A
40 350 300 250m
DC Current Gain, hFE

NPN SILICON TRANSISTOR
Base-Emitter Saturation Voltage vs.
Collector Current
7
3
5
2
3
1.0
2
5
3
=
TA
2
°C
80
5
IC/IB=10
1.0
-20°C
0.1
7
IC/IB=20
5
25°C
3
2
3
0.01
2
3
5
2
3
5
2
3
0.1
1.0
Collector Current, IC (A)
5
10
2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
2
3
5
2
3
5
2
3
0.1
1.0
Collector Current, IC (A)
5
10
2
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NPN SILICON TRANSISTOR
Op
er a
ti o
n
Power Derating
2.0
TO-220
TO-252
1.75
Power Dissipation, PC (W)
s
1m
ms
10
DC
Collector Current , IC (A)
10
0m
s
Transition frequency, fT (MHz)
TYPICAL CHARACTERISTICS(Cont.)

1.5
1.25 TO-126
TO-251
1.0
0.75 TO-92
0.5
0.25
0.0
0
SOT-89
25 50
75 100 125 150 175
Ambient Temperature, TA ( )
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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