ISC 2SD1060

Inchange Semiconductor
Product Specification
2SD1060
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・Low collector saturation voltage
・Complement to type 2SB824
APPLICATIONS
・Suitable for relay drivers,high-speed
Inverters,converters,and other general
large-current switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
60
V
VCEO
Collector-emitter voltage
Open base
50
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current (DC)
5
A
ICP
Collector current (Pulse)
9
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1060
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA ;RBE=∞
50
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
Collector-emitter saturation voltage
IC=3A; IB=0.3A
0.4
V
ICBO
Collector cut-off current
VCB=40V;IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1
mA
hFE-1
DC current gain
IC=1A ; VCE=2V
70
hFE-2
DC current gain
IC=3A ; VCE=2V
30
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
100
pF
fT
Transition frequency
IC=1A ; VCE=-5V
30
MHz
0.1
μs
1.4
μs
0.2
μs
VCEsat
CONDITIONS
MIN
TYP.
MAX
UNIT
280
Switching times
‹
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2.0A; IB1= IB2=0.2A
hFE-1 classifications
Q
R
S
70-140
100-200
140-280
2
Inchange Semiconductor
Product Specification
2SD1060
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
2SD1060
Silicon NPN Power Transistors
4