Datasheet

UNISONIC TECHNOLOGIES CO., LTD
2SB1202
PNP PLANAR TRANSISTOR
HIGH CURRENT SWITCHING
APPLICATION

DESCRIPTION
The UTC 2SB1202 applies to voltage regulators, relay drivers,
lamp drivers, and electrical equipment.

FEATURES
* Adoption of FBET, MBIT processes
* Large current capacity and wide ASO
* Low collector-to-emitter saturation voltage
* Fast switching speed

ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
2SB1202L-x-T6C-K
2SB1202G-x-T6C-K
2SB1202L-x-TM3-T
2SB1202G-x-TM3-T
2SB1202L-x-TN3-R
2SB1202G-x-TN3-R
Note: Pin Assignment: B: Base C: Collector
E: Emitter

Package
TO-126C
TO-251
TO-252
Pin Assignment
1
2
3
E
C
B
B
C
E
B
C
E
Packing
Bulk
Tube
Tape Reel
MARKING
TO-126C
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
TO-251 / TO-252
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QW-R217-005.F
2SB1202

PNP PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
RATINGS
UNIT
-60
V
-50
V
-6
V
TO-126C
20
W
TO-251
Collector Power Dissipation
Tc=25C
PD
28
W
TO-252
28
W
DC
IC
-3
A
Collector Current
PULSE
ICP
-6
A
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VCBO
VCEO
VEBO
THERMAL DATA
PARAMETER
Junction to Case

SYMBOL
TO-126C
TO-251
TO-252
θJC
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25C, unless otherwise specified)
PARAMETER
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Turn-on Time
Storage Time
Fall Time

RATINGS
6.25
4.53
4.53
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(SAT)
VBE(SAT)
hFE1
hFE2
fT
Cob
tON
tSTG
tF
TEST CONDITIONS
IC=-10A, IE=0
IC=-1mA, RBE=
IE=-10A, IC=0
VCB=-40V,IE=0
VEB=-4V,IC=0
IC=-2A, IB=-100mA
IC=-2A, IB=-100mA
VCE=-2V, Ic=-100mA
VCE=-2V, Ic=-3A
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz
See test circuit
See test circuit
See test circuit
MIN
-60
-50
-6
TYP
-0.35
-0.94
100
35
150
39
70
450
35
MAX
-1
-1
-0.7
-1.2
560
UNIT
V
V
V
A
A
V
V
MHz
pF
ns
ns
ns
CLASSIFICATION OF hFE1
RANK
RANGE
R
100-200
S
140-280
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
T
200-400
U
280-560
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QW-R217-005.F
2SB1202

PNP PLANAR TRANSISTOR
TEST CIRCUIT
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R217-005.F
2SB1202

PNP PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R217-005.F
2SB1202

PNP PLANAR TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R217-005.F