1N4148WS Datasheet

1N4148WS
www.vishay.com
Vishay Semiconductors
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
MARKING (example only)
XY
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912 
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




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


22610
Bar = cathode marking
XY = type code
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
1N4148WS
ORDERING CODE
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
Single diode
A2
Tape and reel
1N4148WS-E3-08 or 1N4148WS-E3-18
1N4148WS-HE3-08 or 1N4148WS-HE3-18
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
VR
75
VRRM
100
f  50 Hz
IF(AV)
150
t < 1 s and Tj = 25 °C
IFSM
350
Ptot
200
mW
SYMBOL
VALUE
UNIT
RthJA
650
K/W
Tj
150
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Operating temperature range
Top
- 55 to + 150
°C
Reverse voltage
Repetitive peak reverse voltage
Average rectified current half wave
rectification with resistive load (1)
Surge forward current
Power dissipation (1)
UNIT
V
mA
Note
(1) Valid provided that electrodes are kept at ambient temperature.
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air (1)
Junction temperature
Note
(1) Valid provided that electrodes are kept at ambient temperature
Rev. 2.0, 14-May-13
Document Number: 85751
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148WS
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MAX.
UNIT
IF = 10 mA
VF
1
V
IF = 100 mA
VF
1.2
V
VR = 20 V
IR
25
nA
Forward voltage
VR = 75 V
IR
5
IR
100
VR = 20 V, Tj = 150 °C
IR
50
Diode capacitance
Reverse recovery time
TYP.
VR = 100 V
Leakage current
Voltage rise when switching ON
MIN.
μA
VF = VR = 0 V
CD
4
pF
Tested with 50 mA pulses,
tp = 0.1 μs, rise time < 30 ns,
fp = (5 to 100) kHz
Vfr
2.5
V
IF = 10 mA, iR = 1 mA, VR = 6 V,
RL = 100 
trr
4
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
250
Ptot - Power Dissipation (mW)
103
102
Tj = 100 °C
Tj = 25 °C
IF (mA)
10
1
10-1
200
150
100
50
10-2
0
1
0
Fig. 1 - Forward Characteristics
50
100
150
200
Tamb - Ambient Temperature (°C)
20324
VF (V)
17437
0
2
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
Tj = 25 °C
5
2
10
f = 1 MHz
3
1.0
CD (VR)
2
102
5
CD (0 V)
5
Rf (Ω)
Tj = 25 °C
1.1
f = 1 kHz
2
0.9
0.8
10
5
0.7
2
10-2
10-1
17438
1
10
102
IF (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Rev. 2.0, 14-May-13
0
17440
2
4
6
8
10
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Document Number: 85751
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148WS
www.vishay.com
Vishay Semiconductors
104
5
2
103
IR (nA)
5
2
102
5
2
10
5
VR = 20 V
2
1
100
0
17441
200
Tj (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
100
5
4
3
2
I
IFRM (A)
1
T = 1/fP
IFRM
10
5
4
3
2
n = tP/T
tP
n=0
t
T
0.1
0.2
0.5
5
4
3
2
0.1
10-5
17442
2
5
10-4
2
5
10-3
2
5
10-2
2
5
10-1
2
5
1
2
5
10
tP (s)
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
Rev. 2.0, 14-May-13
Document Number: 85751
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1N4148WS
www.vishay.com
Vishay Semiconductors
0.1 (0.004) max.
0° to 8
°
0.15 (0.006)
0.10 (0.004)
0.2 (0.008)
0.8 (0.031)
1.15 (0.045)
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
2.50 (0.098)
1.1 (0.043)
2.85 (0.112)
1.5 (0.059)
0.40 (0.016)
0.20 (0.008)
Cathode bar
Foot print recommendation:
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
Rev. 2.0, 14-May-13
1.6 (0.063)
0.6 (0.024)
0.6 (0.024)
0.6 (0.024)
Document Number: 85751
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000
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