IRFPE50, SiHFPE50 Datasheet

IRFPE50, SiHFPE50
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
800
RDS(on) (Ω)
VGS = 10 V
• Repetitive Avalanche Rated
1.2
Qg (Max.) (nC)
200
• Isolated Central Mounting Hole
Qgs (nC)
24
• Fast Switching
110
• Ease of Paralleling
Qgd (nC)
Configuration
Single
Available
RoHS*
COMPLIANT
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
D
TO-247AC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The
TO-247AC
package
is
preferred
for
commercial-industrial applications where higher power levels
preclude the use of TO-220AB devices. The TO-247AC is
similar but superior to the earlier TO-218 package because of
its isolated mounting hole. It also provides greater creepage
distance between pins to meet the requirements of most
safety specifications.
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AC
IRFPE50PbF
SiHFPE50-E3
IRFPE50
SiHFPE50
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
SYMBOL
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
for 10 s
6-32 or M3 screw
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
LIMIT
800
± 20
7.8
4.9
31
1.5
770
7.8
19
190
2.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 Ω, IAS = 7.8 A (see fig. 12).
c. ISD ≤ 7.8 A, dI/dt ≤ 140 A/μs, VDD ≤ 600 V, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91248
S11-0442-Rev. B, 14-Mar-11
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFPE50, SiHFPE50
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
40
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-
0.65
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
800
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.98
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
VGS = ± 20 V
-
-
± 100
VDS = 800 V, VGS = 0 V
-
-
100
VDS = 640 V, VGS = 0 V, TJ = 125 °C
-
-
500
IGSS
IDSS
RDS(on)
gfs
ID = 4.7 Ab
VGS = 10 V
VDS = 100 V, ID = 4.7 Ab
μA
-
-
1.2
Ω
5.6
-
-
S
-
3100
-
-
800
-
-
490
-
-
-
200
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 7.8 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 400 V, ID = 7.8 A,
Rg = 6.2 Ω, RD= 52 Ω
see fig. 10b
tf
Internal Drain Inductance
LD
Internal Source Inductance
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
24
-
-
110
-
19
-
-
38
-
-
120
-
-
39
-
-
5.0
-
-
13
-
-
-
7.8
-
-
31
pF
nC
ns
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
TJ = 25 °C, IS = 7.8 A, VGS = 0 Vb
-
-
1.8
Body Diode Reverse Recovery Time
trr
650
980
ns
Qrr
TJ = 25 °C, IF = 7.8 A,
dI/dt = 100 A/μsb
-
Body Diode Reverse Recovery Charge
-
3.8
5.7
μC
Forward Turn-On Time
ton
S
V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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Document Number: 91248
S11-0442-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFPE50, SiHFPE50
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91248
S11-0442-Rev. B, 14-Mar-11
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFPE50, SiHFPE50
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91248
S11-0442-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFPE50, SiHFPE50
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+
- VDD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on)
Fig. 9 - Maximum Drain Current vs. Case Temperature
tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91248
S11-0442-Rev. B, 14-Mar-11
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5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFPE50, SiHFPE50
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
VDS
tp
VDD
D.U.T
RG
+
-
IAS
V DD
VDS
10 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
IAS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
QG
10 V
50 kΩ
12 V
0.2 µF
0.3 µF
QGS
QGD
+
D.U.T.
-
VDS
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91248
S11-0442-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFPE50, SiHFPE50
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91248.
Document Number: 91248
S11-0442-Rev. B, 14-Mar-11
www.vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-247AC (High Voltage)
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
4
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
(b1, b3, b5)
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
A1
2.21
2.59
A2
1.17
2.49
b
0.99
1.40
b1
0.99
1.35
b2
1.53
2.39
b3
1.65
2.37
b4
2.42
3.43
b5
2.59
3.38
c
0.38
0.86
c1
0.38
0.76
D
19.71
20.82
D1
13.08
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
INCHES
MIN.
MAX.
0.180
0.209
0.087
0.102
0.046
0.098
0.039
0.055
0.039
0.053
0.060
0.094
0.065
0.093
0.095
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.820
0.515
-
DIM.
D2
E
E1
e
Øk
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
0.254
14.20
16.25
3.71
4.29
7.62 BSC
3.51
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.640
0.146
0.169
0.300 BSC
0.138
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
Document Number: 91360
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000