VISHAY SIHG24N65E_13

SiHG24N65E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Low Figure-of-Merit (FOM) Ron x Qg
700
RDS(on) max. at 25 °C ()
VGS = 10 V
Qg max. (nC)
122
Qgs (nC)
21
Qgd (nC)
•
•
•
•
•
0.145
37
Configuration
Single
Low Input Capacitance (Ciss)
Reduced Switching and Conduction Losses
Ultra Low Gate Charge (Qg)
Avalanche Energy Rated (UIS)
Material categorization: For definitions please see
www.vishay.com/doc?99912
APPLICATIONS
D
TO-247AC
•
•
•
•
Server and Telecom Power Supplies
Switch Mode Power Supplies (SMPS)
Power Factor Correction Power Supplies (PFC)
Lighting
- High-Intensity Discharge (HID)
- Fluorescent Ballast Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
- Renewable Energy
- Solar (PV Inverters)
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free
SiHG24N65E-E3
Lead (Pb)-free and Halogen-free
SiHG24N65E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
LIMIT
VDS
650
VGS
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (TJ = 150 °C)
SYMBOL
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
± 20
UNIT
V
30
24
16
A
IDM
70
2
W/°C
Single Pulse Avalanche Energyb
EAS
508
mJ
Maximum Power Dissipation
PD
250
W
TJ, Tstg
- 55 to + 150
°C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode
TJ = 125 °C
dV/dtd
Soldering Recommendations (Peak Temperature)
for 10 s
dV/dt
37
11
300c
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 6 A.
c. 1.6 mm from case.
d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S12-3104-Rev. F, 24-Dec-12
Document Number: 91476
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG24N65E
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Maximum Junction-to-Case (Drain)
RthJC
-
0.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
VDS
VGS = 0 V, ID = 250 μA
650
-
-
V
VDS/TJ
Reference to 25 °C, ID = 250 μA
-
0.72
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
nA
VGS = ± 20 V
-
-
± 100
VDS = 650 V, VGS = 0 V
-
-
1
VDS = 520 V, VGS = 0 V, TJ = 125 °C
-
-
10
IGSS
IDSS
μA
-
0.120
0.145

gfs
VDS = 8 V, ID = 5 A
-
7.1
-
S
Input Capacitance
Ciss
2740
-
pF
Coss
-
122
-
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
Output Capacitance
-
4
-
Effective Output Capacitance, Energy
Relateda
Co(er)
-
93
-
Effective Output Capacitance, Time
Relatedb
Co(tr)
-
352
-
Qg
-
81
122
-
21
-
-
37
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 10 V
ID = 12 A
Dynamic
Total Gate Charge
VDS = 0 V to 520 V, VGS = 0 V
VGS = 10 V
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
-
24
48
tr
-
84
126
-
70
105
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Gate Input Resistance
Rg
ID = 12 A, VDS = 520 V
VDD = 520 V, ID = 12 A,
VGS = 10 V, Rg = 9.1 
f = 1 MHz, open drain
nC
ns
-
69
104
-
0.68
-
-
-
24
-
-
70
-
-
1.2
-
433
-
ns
-
7.3
-
μC
-
28
-
A

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = 12 A, VGS = 0 V
TJ = 25 °C, IF = IS = 12 A,
dI/dt = 100 A/μs, VR = 25 V
V
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S12-3104-Rev. F, 24-Dec-12
Document Number: 91476
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG24N65E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3
TOP 15 V
14 V
13 V
12 V
60
TJ = 25 °C
ID = 12 A
RDS(on), Drain-to-Source
On Resistance (Normalized)
ID, Drain-to-Source Current (A)
80
11 V
40
10 V
20
9V
2.5
2
1.5
1
VGS = 10 V
0.5
5V
0
0
0
5
10
15
20
25
TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
10 000
TOP 15 V
14 V
13 V
12 V
11 V
10 V
TJ = 150 °C
Ciss
Capacitance (pF)
ID, Drain-to-Source Current (A)
20 40 60 80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
60
40
- 60 - 40 - 20 0
30
9V
20
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1000
Coss
100
10
8V
Crss
5V
1
0
0
5
10
15
20
25
30
0
VDS, Drain-to-Source Voltage (V)
200
400
300
500
600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics
80
24
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
100
60
40
TJ = 150 °C
20
TJ = 25 °C
0
VDS = 520 V
VDS = 335 V
VDS = 130 V
20
16
12
8
4
0
0
5
10
15
20
25
0
30
60
90
120
150
VGS, Gate-to-Source Voltage (V)
Qg, Total Gate Charge (nC)
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-3104-Rev. F, 24-Dec-12
Document Number: 91476
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG24N65E
www.vishay.com
Vishay Siliconix
25
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
20
15
10
5
VGS = 0 V
0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
1.6
VSD, Source-Drain Voltage (V)
75
100
125
150
TJ, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
825
1000
Operation in this area
limited by RDS(on)
800
VDS, Drain-to-Source
Brakdown Voltage (V)
ID, Drain Current (A)
50
IDM limited
100
10
100 μs
Limited by R DS(on)*
1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1 ms
775
750
725
700
675
BVDSS Limited
10 ms
650
- 60 - 40 - 20 0
1
10
100
10 000
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 8 - Maximum Safe Operating Area
Fig. 10 - Temperature vs. Drain-to-Source Voltage
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S12-3104-Rev. F, 24-Dec-12
Document Number: 91476
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG24N65E
www.vishay.com
Vishay Siliconix
RD
VDS
QG
10 V
VGS
D.U.T.
RG
QGS
+
- VDD
QGD
VG
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Charge
Fig. 12 - Switching Time Test Circuit
Fig. 16 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
VDS
90 %
50 kΩ
12 V
0.2 µF
0.3 µF
+
10 %
VGS
D.U.T.
td(on)
td(off) tf
tr
-
VDS
VGS
3 mA
Fig. 13 - Switching Time Waveforms
IG
ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
L
Vary tp to obtain
required IAS
VDS
D.U.T
RG
+
-
IAS
V DD
10 V
0.01 Ω
tp
Fig. 14 - Unclamped Inductive Test Circuit
VDS
tp
VDD
VDS
IAS
Fig. 15 - Unclamped Inductive Waveforms
S12-3104-Rev. F, 24-Dec-12
Document Number: 91476
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHG24N65E
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91476.
S12-3104-Rev. F, 24-Dec-12
Document Number: 91476
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-247AC (High Voltage)
A
A
4
E
B
3 R/2
E/2
7 ØP
Ø k M DBM
A2
S
(Datum B)
ØP1
A
D2
Q
4
4
2xR
(2)
D1
D
1
2
4
D
3
Thermal pad
5 L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
4
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
Planting
Lead Assignments
1. Gate
2. Drain
3. Source
4. Drain
D DE
(b1, b3, b5)
Base metal
E
C
(c)
C
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
MILLIMETERS
DIM.
MIN.
MAX.
A
4.58
5.31
A1
2.21
2.59
A2
1.17
2.49
b
0.99
1.40
b1
0.99
1.35
b2
1.53
2.39
b3
1.65
2.37
b4
2.42
3.43
b5
2.59
3.38
c
0.38
0.86
c1
0.38
0.76
D
19.71
20.82
D1
13.08
ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971
INCHES
MIN.
MAX.
0.180
0.209
0.087
0.102
0.046
0.098
0.039
0.055
0.039
0.053
0.060
0.094
0.065
0.093
0.095
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.820
0.515
-
DIM.
D2
E
E1
e
Øk
L
L1
N
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
0.254
14.20
16.25
3.71
4.29
7.62 BSC
3.51
3.66
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.640
0.146
0.169
0.300 BSC
0.138
0.144
0.291
0.209
0.224
0.178
0.216
0.217 BSC
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
8. Xian and Mingxin actually photo.
Revision: 01-Jul-13
Document Number: 91360
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000