SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single APPLICATIONS D • • • • Server and Telecom Power Supplies Switch Mode Power Supplies (SMPS) Power Factor Correction Power Supplies (PFC) Lighting - High-Intensity Discharge (HID) - Fluorescent Ballast Lighting - LED Lighting • Industrial - Welding - Induction Heating - Motor Drives • Battery Chargers • Renewable Energy - Solar (PV Inverters) TO-247AC G S S D G Low Figure-of-Merit (FOM) Ron x Qg Low Input Capacitance (Ciss) Reduced Switching and Conduction Losses Ultra Low Gate Charge (Qg) Avalanche Energy Rated (UIS) Material categorization: For definitions please see www.vishay.com/doc?99912 N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and Halogen-free TO-247AC SiHG30N60E-E3 SiHG30N60E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage LIMIT VDS 600 VGS Gate-Source Voltage AC (f > 1 Hz) Continuous Drain Current (TJ = 150 °C) SYMBOL VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID ± 20 UNIT V 30 29 18 A IDM 65 2 W/°C Single Pulse Avalanche Energyb EAS 690 mJ Maximum Power Dissipation PD 250 W TJ, Tstg - 55 to + 150 °C Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dtd Soldering Recommendations (Peak Temperature) for 10 s dV/dt 37 18 300c V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 7 A. c. 1.6 mm from case. d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S12-3103-Rev. E, 24-Dec-12 Document Number: 91455 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG30N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Case (Drain) RthJC - 0.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current VDS VGS = 0 V, ID = 250 μA 600 - - V VDS/TJ Reference to 25 °C, ID = 250 μA - 0.64 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V nA VGS = ± 20 V - - ± 100 VDS = 600 V, VGS = 0 V - - 1 VDS = 600 V, VGS = 0 V, TJ = 150 °C - - 100 IGSS IDSS μA - 0.104 0.125 gfs VDS = 8 V, ID = 3 A - 5.4 - S Input Capacitance Ciss 2600 - Coss - 138 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1.0 MHz - Output Capacitance - 3 - Effective Output Capacitance, Energy Relateda Co(er) - 98 - Effective Output Capacitance, Time Relatedb Co(tr) - 346 - Qg - 85 130 - 15 - - 39 - Drain-Source On-State Resistance Forward Transconductancea RDS(on) VGS = 10 V ID = 15 A Dynamic Total Gate Charge pF VDS = 0 V to 480 V, VGS = 0 V VGS = 10 V Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) - 19 40 tr VDD = 380 V, ID = 15 A, VGS = 10 V, Rg = 4.7 - 32 65 - 63 95 - 36 75 f = 1 MHz, open drain - 0.63 - - - 29 - - 65 - - 1.3 - 402 605 ns - 7 15 μC - 32 65 A Rise Time Turn-Off Delay Time td(off) Fall Time tf Gate Input Resistance Rg ID = 15 A, VDS = 480 V nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 15 A, VGS = 0 V TJ = 25 °C, IF = IS = 15 A, dI/dt = 100 A/μs, VR = 20 V V Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S12-3103-Rev. E, 24-Dec-12 Document Number: 91455 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG30N60E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 80 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V ID - Drain Current (A) 60 TJ = 25 °C 50 40 TJ = 25 °C 60 ID, Drain Current (A) 70 30 20 TJ = 150 °C 40 20 5V 10 0 0 0 5 10 15 20 25 0 30 5 15 20 25 VGS, Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics 50 3.0 ID = 15 A 2.5 40 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V 30 20 RDS(on) - On-Resistance (Normalized) ID - Drain Current (A) 10 10 VGS = 10 V 2.0 1.5 1.0 0.5 TJ = 150 °C 0.0 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C S12-3103-Rev. E, 24-Dec-12 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91455 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG30N60E www.vishay.com Vishay Siliconix 10 000 1000 Ciss ID, Drain Current (A) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd x Cds shorted Crss = Cgd Coss = Cds + Cgd 1000 C - Capacitance (pF) Operation in this area limited by RDS(on) 100 Coss 10 Crss 100 200 300 400 500 10 100 μs 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 100 1 10 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 600 VDS - Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 30.0 24 VDS = 300 V 25.0 20 VDS = 120 V 16 VDS = 480 V 12 8 ID, Drain Current (A) VGS - Gate-to-Source Voltage (V) ID = 15 A 20.0 15.0 10.0 5.0 4 0 0 0 25 50 75 100 125 25 150 50 75 125 150 Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 725 100 VDS, Drain-to-Source Breakdown Voltage (V) 1000 TJ = 150 °C 10 1 TJ = 25 °C 0.1 0.01 0.001 0.0 100 TC - Temperature (°C) Qg - Total Gate Charge (nC) IS - Source Current (A) 10 ms BVDSS Limited 0.1 0.1 1 0 IDM Limited 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage S12-3103-Rev. E, 24-Dec-12 700 675 650 625 600 575 550 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ - Temperature (°C) Fig. 10 - Temperature vs. Drain-to-Source Voltage Document Number: 91455 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG30N60E www.vishay.com Vishay Siliconix Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case VGS VDS RD VDS tp VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 15 - Unclamped Inductive Waveforms Fig. 12 - Switching Time Test Circuit VDS 90 % QG 10 V QGS 10 % VGS QGD VG td(on) td(off) tf tr Fig. 13 - Switching Time Waveforms Charge Fig. 16 - Basic Gate Charge Waveform L Vary tp to obtain required IAS VDS Current regulator Same type as D.U.T. D.U.T RG + - IAS V DD 50 kΩ 12 V 0.2 µF 0.3 µF 10 V tp + 0.01 Ω Fig. 14 - Unclamped Inductive Test Circuit D.U.T. - VDS VGS 3 mA IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit S12-3103-Rev. E, 24-Dec-12 Document Number: 91455 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG30N60E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91455. S12-3103-Rev. E, 24-Dec-12 Document Number: 91455 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.59 A2 1.17 2.49 b 0.99 1.40 b1 0.99 1.35 b2 1.53 2.39 b3 1.65 2.37 b4 2.42 3.43 b5 2.59 3.38 c 0.38 0.86 c1 0.38 0.76 D 19.71 20.82 D1 13.08 ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971 INCHES MIN. MAX. 0.180 0.209 0.087 0.102 0.046 0.098 0.039 0.055 0.039 0.053 0.060 0.094 0.065 0.093 0.095 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.820 0.515 - DIM. D2 E E1 e Øk L L1 N ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 0.254 14.20 16.25 3.71 4.29 7.62 BSC 3.51 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.640 0.146 0.169 0.300 BSC 0.138 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8. Xian and Mingxin actually photo. Revision: 01-Jul-13 Document Number: 91360 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000