AN98579 Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S AN98579 details how to migrate designs from Macronix 128 Mbit MX29GL128E, 256 Mbit MX29GL256E, and 512 Mbit MX29GL512E flash memory devices to Cypress 128 Mbit 29GL128S, 256 Mbit S29GL256S, and 512 Mbit S29GL512S MirrorBit® flash memory devices, respectively. 1 Introduction This application note details how to migrate designs from Macronix 128 Mbit MX29GL128E, 256 Mbit MX29GL256E, and 512 Mbit MX29GL512E flash memory devices to Cypress 128 Mbit 29GL128S, 256 Mbit S29GL256S, and 512 Mbit S29GL512S MirrorBit flash memory devices, respectively. The S29GL128S / S29GL256S / S29GL512S devices are 3.0 volt-only Page Mode flash memory manufactured with 65 nm MirrorBit Eclipse™ technology. Cypress GL-S flash family devices are compatible with the Macronix 128 Mbit MX29GL128E, 256 Mbit MX29GL256E, and 512 Mbit MX29GL512E devices with respect to: 2 Sector (or block) architecture, JEDEC standard compliant software command set. Feature Comparison Table 1 shows a feature comparison summary of the Macronix 512 Mbit MX29GL512E flash memory to the Cypress 512 Mbit S29GL512S MirrorBit flash family device. Table 1. Feature Comparison — Macronix 512 Mbit MX29GL512E to Cypress 512 Mbit S29GL512S (Sheet 1 of 2) Cypress Macronix S29GL512S MX29GL512E VCC 2.7~3.6V 2.7~3.6V VIO 1.65~3.6V N/A Random 100 ns (2.7 to 3.6V) 110 ns (2.7 to 3.6V) 110 ns (Low VIO) 120 ns (Low VIO) 100 ns (3.0 to 3.6V) 110 ns (2.7 to 3.6V) Page 15 ns (2.7 to 3.6V) 20 ns (2.7 to 3.6V) 25 ns (Low VIO) 30 ns (Low VIO) 25 ns Test Condition (Output Load Capacitance) 30 pF 30 pF Read Performance Up to 98.5 MB/s Up to 58.2 MB/s Bus width only x16 x8/x16 Sector Uniform 128 kB Uniform 128 kB VCC Access time Program 256 word (512 Byte) 32 word (64 Byte) Read 16 word (32 Byte) 8 word (16 Byte) Data#Polling or Status Register Data#Polling and Status Register Data#Polling Unlock Bypass No (Note 1) Yes Page Size Multi-sector Erase No (Note 1) Yes Blank Check Yes No OTP 512 Byte (256 Word) x 2 256 Byte (128 Word) www.cypress.com Document No. 001-98579 Rev. *A 1 Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S Table 1. Feature Comparison — Macronix 512 Mbit MX29GL512E to Cypress 512 Mbit S29GL512S (Sheet 2 of 2) Cypress Macronix S29GL512S MX29GL512E Software Password (64 bit) Persistent Protection (Note 2) Password (64 bit) Persistent Protection (Note 2) Hardware WP# (Lowest or Highest address sector) WP# (Lowest or Highest address sector) 56-Pin TSOP 64-Ball BGA 56-Pin TSOP 64-Ball BGA 70-Pin SSOP Protection Package Notes: 1. Removed per legacy features. 2. Persistent Protection and Solid Write Protection are same function. Table 2 shows a feature comparison summary of the Macronix 256 Mbit MX29GL256E and 128 Mbit MX29GL128E flash memory to the Cypress 256 Mbit S29GL256S and 128 Mbit S29GL128S MirrorBit flash family devices. Table 2. Feature Comparison — Macronix 256 Mbit MX29GL256E and 128Mbit MX29GL128E to Cypress 256 Mbit S29GL256S, and 128 Mbit S29GL128S Cypress Macronix S29GL256S/128S MX29GL256E/128E VCC 2.7~3.6V 2.7~3.6V VIO 1.65~3.6V 1.65~3.6V Random 90 ns (2.7 to 3.6V) 100 ns (2.7 to 3.6V) 100 ns (Low VIO) 110 ns (Low VIO) 90 ns (3.0 to 3.6V) 100 ns (2.7 to 3.6V) 110 ns (Low VIO) Page 15 ns (2.7 to 3.6V) 20 ns (2.7 to 3.6V) 25 ns (Low VIO) 30 ns (Low VIO) 25 ns (2.7~3.6V) 30 ns (Low VIO) Test Condition (Output Load Capacitance) 30 pF 30 pF Read Performance Up to 101.6 MB/s Up to 60.4 MB/s Bus width only x16 x8/x16 VCC Access time Sector Page Size Program Read Data#Polling or Status Register Uniform 128 kB Uniform 128 kB 256 word (512 Byte) 32 word (64 Byte) 16 word (32 Byte) 8 word (16 Byte) Data#Polling and Status Register Data#Polling Unlock Bypass No (Note 1) Yes Multi-sector Erase No (Note 1) Yes Blank Check Yes No OTP 512 Byte (256 Word) x2 256 Byte (128 Word) x2 Software Password (64 bit) Persistent Protection (Note 2) Password (64 bit) Persistent Protection (Note 2) Hardware WP# (Lowest or Highest address sector) WP# (Lowest or Highest address sector) 56-Pin TSOP 64-Ball BGA 56-Pin TSOP 64-Ball BGA 70-Pin SSOP Protection Package Notes: 1. Removed per legacy features. 2. Persistent Protection and Solid Write Protection are same function. Table 3 shows a comparison between Macronix and Cypress flash memory Erase and Program Performance. www.cypress.com Document No. 001-98579 Rev. *A 2 Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S Table 3Erase and Program Performance Cypress Macronix S29GL-S Word w/o ACC Word w/ACC Program MX29GL-E Typ Max Typ Max 125 µs 400 µs 11 µs 360 µs N/A 11 µs Write Buffer 2 Byte w/o ACC 125 µs Write Buffer 32 Byte w/o ACC 160 µs Write Buffer 64 Byte w/o ACC 175 µs Write Buffer 128 Byte w/o ACC 198 µs Write Buffer 256 Byte w/o ACC 239 µs Write Buffer 512 Byte w/o ACC 340 µs 200 µs 750 µs Write Buffer 64 Byte w/ACC 100 µs Program performance w/o ACC 1.5 MB/s (Typ) Sector Erase Erase 0.2s 320 kB/s (Typ) 1.1s 0.6s 5s Erase performance (Typ) 655 kB/s (Note 1) 213 kB/s (Note 2) Erase performance (Worst Case) 119 kB/s (Note 1) 25.6 kB/s (Note 2) Notes: 1. Erase performance of S29GL-S is included pre-program time. 2. Erase performance of MX29GL-E is not included pre-program time. 3 DC Specification The S29GL-S and MX29GL-E have primarily compatible specifications. Differences in DC Characteristics between the devices are highlighted in Table 4. The potential impact of any parameter specification differences should be evaluated and validated. Refer to the respective Macronix MX29GL-E and Cypress S29GL-S data sheets to verify the most up to date specifications. Table 4. DC Specification Cypress Macronix S29GL-S Min Typ MX29GL128/256E Max Min Typ MX29GL512E Max Min Typ Max Input Load Current +0.02 µA ±1.0 µA ± 2.0 µA ± 4.0 µA Output Leakage Current +0.02 µA ±1.0 µA ± 1.0 µA ± 1.0 µA VCC Active Read Current (5 MHz) 55 mA 60 mA 30 mA 50 mA 30 mA 50 mA VCC Intra-Page Read Current 9 mA 25 mA 6 mA 20 mA 6 mA 20 mA VCC Active Erase/Program Current 45 mA 100 mA 26 mA 30 mA 26 mA 30 mA VCC Standby Current 70 µA 100 µA 30 µA 100 µA 60 µA 200 µA VCC Reset Current 10 mA 20 mA 30 µA 100 µA 60 µA 200 µA Automatic Sleep Mode 3 mA 6 mA 30 µA 100 µA 60 µA 200 µA VCC Current during power up 53 mA 80 mA Input Low Voltage -0.5V 0.2 x VIO -0.1V 0.3 x VIO -0.1V 0.3 x VIO Input High Voltage 0.7 x VIO VIO + 0.4V 0.7 x VIO VIO + 0.3V 0.7 x VIO VIO + 0.3V 0.15 x VIO Output Low Voltage Output High Voltage www.cypress.com 0.85 x VIO 0.45V 0.85 x VIO Document No. 001-98579 Rev. *A 0.45V 0.85 x VIO 3 Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S 4 Device ID This section provides a comparison between Macronix and Cypress flash memory Device ID. The GL-S flash only supports Autoselect Register access via software command sets. Macronix GL-E supports Autoselect Register access via software command sets and high voltage method which requires VID (nominally 12V) applied to Address input A9. Table 5. Device ID Address S29GL512S MX29GL512E 0001h 00C2h Word1 (Base)+01h 227Eh 227Eh Word2 (Base)+0Eh 2223h 2223h Word3 (Base)+0Fh 2201h 2201h Cypress Macronix Address S29GL256S MX29GL256E Manufacturer ID Device ID (Base)+00h 0001h 00C2h Cycle1 (Base)+01h 227Eh 227Eh Cycle2 (Base)+0Eh 2222h 2222h Cycle3 (Base)+0Fh 2201h 2201h Cypress Macronix Address S29GL128S MX29GL128E (Base)+00h 0001h 00C2h Cycle1 (Base)+01h 227Eh 227Eh Cycle2 (Base)+0Eh 2221h 2221h Cycle3 (Base)+0Fh 2201h 2201h Manufacturer ID Device ID 5 Macronix (Base)+00h Manufacturer ID Device ID Cypress Program Suspend / Resume There are specification differences at program Suspend Resume Command and Specification between Macronix and Cypress flash memory. Table 6. Program Suspend / Resume Specification Cypress Macronix S29GL-S MX29GL-E Typ Erase Erase Suspend Latency Erase Suspend Erase Resume to next Erase Suspend Program Program Suspend Latency Program Suspend Program Resume to next Program Suspend Max 40 µs 100 µs Max 20 µs 400 µs 40 µs 100 µs Typ Not defined 5 µs GL-S has two commands for Program resume: the legacy combined Erase / Program Suspend and resume command (B0h/30h command code), and the separate Program Suspend and Resume command (51h/50h command code). www.cypress.com Document No. 001-98579 Rev. *A 4 Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S Table 7. Program Suspend / Resume Command 6 Cypress Macronix S29GL-S MX29GL-E Program/Erase Suspend B0h B0h Program/Erase Resume 30h 30h Program Suspend Enhanced Method 51h N/A Program suspend Enhanced Method 50h N/A Power-Up Timing This section provides a comparison between Macronix and Cypress flash memory power up timing. Table 8. Power-up Timing 7 Cypress Macronix S29GL-S MX29GL-E Min Min VCC Setup Time to first access 300 µs 500 µs VIO Setup Time to first access 300 µs RESET# Low to CE# Low during embedded operation 35 µs RESET# Pulse Width during embedded operation 200 ns 10 µs Time between RESET# (High) and CE# (Low) 50 ns 200 ns 20 µs Packaging Several of the pin definitions have changed between Macronix and Cypress flash memory, see Table 9. WP#/ACC: GL-S does not support High Voltage Accelerated Programming, ACC is removed. No difference on WP# function. BYTE#: GL-S supports only x16 data bus width, BYTE# is not required. This pin is not connected internally and can float or be connected to VCC or GND. DQ15/A-1: GL-S supports only x16 data bus width, A-1 input is not required. Table 9. Pin-out Difference Cypress Macronix S29GL-S MX29GL-E 16 WP# (Note 1) WP#/ACC 28 DNU (Note 2) NC (Note 3) 51 DQ15 Q15/A-1 53 RFU (Note 4) BYTE# B4 WP# (Note 1) WP#/ACC E1 DNU (Note 2) NC (Note 3) F7 RFU (Note 4) BYTE# G7 DQ15 Q15/A-1 Pin or Ball TSOP Package BGA Package Notes: 1. Voltage cannot exceed VIO + 0.4V on WP# input for GL-S. 2. DNU = Do Not Use, must remain floating. 3. NC = Not Connected, should remain floating, okay to be pulled low or high. 4. RFU = Reserved for Future use, not connected internally on GL-S, okay to pull high. www.cypress.com Document No. 001-98579 Rev. *A 5 Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S 8 References Cypress GL-S MirrorBit Eclipse Flash Non-Volatile Memory Family Datasheet Macronix MX29GL512E H/L Datasheet, P/N PM1524 Macronix MX29GL256E Datasheet, P/N PM1499 Macronix MX29GL128E Datasheet, P/N PM1500 www.cypress.com Document No. 001-98579 Rev. *A 6 Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S Document History Page Document Title: AN98579 - Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S Document Number: 001-98579 Rev. ECN No. Orig. of Change Submission Date Description of Change ** – – 10/06/2011 Initial version *A 4959012 MSWI 10/12/2015 Updated in Cypress template www.cypress.com Document No. 001-98579 Rev. *A 7 Migration from Macronix™ GL-E (128-512 Mb) to Cypress S29GL-S Worldwide Sales and Design Support Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturers’ representatives, and distributors. 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The inclusion of Cypress' product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. www.cypress.com Document No. 001-98579 Rev. *A 8