Evaluation board Manual 19W Tube T8 AC85-265V MB39C602-EVB-CN01 Rev 1.0 Feb. 2013 1. Summarize The drive capability MB39C602-EVB-CN01 reach 19w.It can be placed inT5, T8, T10, T12 lamp used to replace existing fluorescent lamps. 2. EVB Electrical Performance Specifications Ta = +25°C , fac=50Hz TEST CONDITIONS PARAMETER MIN TYP MAX UNITS 265 VAC Input Characteristics Input Voltage Range 85 Maximum Input current 85VAC /50Hz 280 mA Output Characteristics Output Voltage 30 ILED Output Current Ripple 40 42 V 485 mA 144 mAPP 100 KHz 87 % Systems Characteristics Switching Frequency Peak Efficiency ILED=485mA Power Factor 0.99 ITHD 8.6 % 295*18*9 mm PCB Size L*W*H Dimming Mode - Protection Function UVLO,OTP, OVP, SCP 3.Terminal Description Pin Name Description L AC line input N AC line input LED+ LED output (+) LED- LED return point (-) 1 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 4. Test Setup (Note) This evaluation board is a high voltage. Should be handled carefully. During operation, do not touch the evaluation board. (1) Recommended Test Setup ・Connect L and N to AC power. ・Please connect the measuring instrument and LED. (LED: 12 series connected, VF = 3.3V, IF = 485mA) AC Power Supply VAC:220Vrms DMM IOUT + DMM VOUT + (2) How to check • Make sure that the terminals are connected correctly, and then turn on the AC POWER. • LED light ,and the same time VOUT = 40V, IOUT = 485mA .The EVB working properly. 2 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 5. EVM Assembly Drawing and PCB layout MB39C602-EVB-CN01 Top Layer (top view) Bottom Copper (bottom view) Top Layer Assembly Drawing (top view) Bottom Assembly Drawing (bottom view) Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 3 6. Schematic 4 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 7. BOM List COUNT REFDES DESCRIPTION PART NUMBER MFR 1 U1 LED driver IC, SOP-8 MB39C602 FUJITSU 1 U2 Optical coupling PS2581AL2 NEC 1 U3 Rail-to-rail op amp，SOT-235 SGM321 SGMICRO 1 F1 Two-pin DIP package glass fuse,1A/250V T1A-250V STD 1 BR1 4-pin SMD rectifier bridge,1000V/1A,SO-8 DB107S MIC 1 RZ1 2-pin DIP package varistor，Diameter:7mm 7D471 SPSEMI 2 CX1 CX2 2-pin DIP package safety capacitor， 275VAC/0.1uF，X2 STD STD 1 CY1 2-pin DIP package safety capacitor,2.2nF,Y2 DE1E3KX222M4B L01 Murata 1 C1 2-pin DIP package CBB capacitor,22nF/630V STD STD 1 C15 2-pin DIP package capacitorelectrolytic， 100uF/25V/105°C,Size:6mm*8mm STD STD 2 C4 C5 2-pin DIP package capacitorelectrolytic， 470uF/50V/105°C,Size:10mm*20mm STD STD 3 L2 L3 L4 2-pin DIP package differential mode inductance， 2mH/10%/DR8mm*10mm/0.21mm(wire diameter) DR8x10-2mH BZD 1 L1 4-pin DIP package common mode inductance， 30mH/10%/EE12/0.21mm(wire diameter) EE12-30mH BZD 1 L5 5-pin DIP package common mode inductance, 700uH,Size:9mm*5mm*3mm T9x5x3 BZD 1 T1 Transformer，EDR2809/PC95,PIN5+2 EDR2809/PC95 BZD 1 Q1 N-MOSFET,650 V, 7.3 A, 0.6 W, TO-220 SPA07N60C3 Infineon 1 D1 2-pin SMD fast recovery rectifier,1000V/1A,SMA STTH108A ST 1 D2 2-pin DIP super fast recovery rectifier， 300V/3A,DO-27 HER304 MIC 1 D4 Super fast recovery rectifier， 175V/200mA,SOT-23 MMBD1404 Fairchild 1 D3 5.1V Zener diode,1206 1N5231B DIODES 1 D5 16V Zener diode,1206 1N5246B DIODES 1 D6 General purpose diode,DO-41,In parallel with R13 IN4007 MIC 5 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED COUNT REFDES DESCRIPTION PART NUMBER MFR 2 R1 R2 NC/1M/5%/1206 RC1206JR-101ML YAGEO 3 R3 R4 R8 1M/5%/1206 RC1206JR-101ML YAGEO 3 R5 R6 R7 4K3/5%/0805 RC0805JR-104K3L YAGEO 1 R9 560K/5%/1206 RC1206JR-10560KL YAGEO 2 R10 R11 150K/5%/1206 RC1206JR-10150KL YAGEO 1 R12 10Ω/5%/1206 RC1206JR-1010RL YAGEO 1 R13 0.5R/1%/1206 RC1206FR-10R5L YAGEO 1 R14 51K/5%/1206 RC1206JR-1051KL YAGEO 1 R15 4.99Ω/5%/0805 RC0805JR-104R99L YAGEO 1 R16 10Ω/5%/0805 RC0805JR-1010RL YAGEO 1 R17 15K/5%/0805 RC0805JR-1015KL YAGEO 1 R18 150K/1%/0805 RC0805FR-10150KL YAGEO 1 R19 47K/1%/0603 RC0603FR-0747KL YAGEO 1 R20 33K/1%/0603 RC0603FR-0733KL YAGEO 1 R21 100K/1%/0603 RC0603FR-07100KL YAGEO 1 R22 10K/1%/0603 RC0603FR-0710KL YAGEO 1 R23 360K/1%/0603 RC0603FR-07360KL YAGEO 2 R24 R25 3K/5%/0603 RC0603JR-073KL YAGEO 1 R26 20K/5%/0603 RC0603JR-0720KL YAGEO 1 R27 560K/1%/0603 RC0603FR-07560KL YAGEO 1 R28 27K/1%/0603 RC0603FR-0727KL YAGEO 1 R30 100Ω/5%/1206 RC1206JR-10100RKL YAGEO 1 C2 15nF/200V/1206 MC1206B153K201CT MULTICOMP 1 C3 330pF/1000V/1206 MC1206N331J201CT MULTICOMP 3 C6 C8 C14 0.1uF/50V/0603 CC0603KRX7R8BB104 YAGEO 5 C7 C10 C11 C12 C13 10nF/50V/0603 CC0603KRX7R9BB103 YAGEO 1 C9 330nF/50V/0603 CC0603KRX5R8BB334 YAGEO 1 C15 39pF/50V/0603, In parallel with R19 CC0603JRNPO9BN390 YAGEO 6 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 9. Property data 9-1 Efficiency VIN:85VAC ~265VAC/50Hz, IOUT=485mA，TA=25℃ 100% 90% Efficiency （%） 80% 70% 60% 50% 40% 30% 20% 10% 265 260 250 240 230 220 210 200 190 180 170 160 150 140 130 120 110 100 90 85 0% VIN(VRMS) 9-2 Power Factor VIN:85VAC ~265VAC/50Hz, IOUT=485mA，TA=25℃ 1 0.98 PF 0.96 0.94 0.92 265 260 250 240 230 220 210 200 190 180 170 160 150 140 130 120 110 100 90 85 0.9 VIN(VRMS) 7 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 9-3 ITHD VIN:85VAC ~265VAC/50Hz, IOUT=485mA，TA=25℃ 16.0% 14.0% 12.0% ITHD 10.0% 8.0% 6.0% 4.0% 2.0% 0.0% 85 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 265 VIN(VRMS) 9-4 Line regulation VIN:85VAC ~265VAC/50Hz, TA=25℃ 500 495 490 Iled(mA) 485 480 475 470 465 460 455 450 85 90 100 110 120 130 140 150 160 170 180 190 200 210 220 230 240 250 260 265 VIN (VRMS) 8 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED VAC=220VRMS, 50Hz, LED ; 12 pcs in series 9-6 Switching Waveform 9-5 Output Ripple VBULK VSW(Q1 drain) Iac VOUT IOUT IOUT 9-8 Turn-Off Waveform 9-7 Turn-On Waveform VBULK VBULK VDD VDD VOUT VOUT IOUT IOUT 9-9 LED Open Waveform 9-10 LED Short Waveform VSW(Q1 drain) VSW(Q1 drain) VOUT VOUT IOUT IOUT 9 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 9-11 EMI Conduction Test EN55015-N 10 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED EN55015-L 11 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 9-12 EVB Temperature VAC=220VRMS 50Hz LED ; 12 pcs in series, Iled=485mA Top Side Name Center Hot Cold Top Side Temperature 13.5°C 40.4°C 9.6°C Emissivity 0.95 0.95 0.95 Bottom Side Name Center Hot Cold Background 20.0°C 20.0°C 20.0°C Bottom Side Temperature 18.6°C 34.8°C 9.7°C Emissivity 0.95 0.95 0.95 12 Background 20.0°C 20.0°C 20.0°C Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 10. Evaluation board picture 295mm 18mm Top View Bottom View 13 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 11. Revision History Name Version MB39C602-EVB-CN01 Rev 1.0 Remark Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. 14 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED