Evaluation Board Manual 3W Candle Lighting AC 220V MB39C601-EVB MB39C601EVB--CN01 Rev 1.0 Mar. 2013 1. Summarize The driver MB39C601-EVB-CN01 has the driving capability of 3 watts. It can be placed in LED candle light or other similar model 2. EVB Electrical Performance Specifications Ta = +25℃ , fac = 50Hz PARAMETER TEST CONDITIONS MIN TYP MAX UNITS 198 220 242 VAC Input Characteristics Input Voltage Range Maximum Input Current Vin=220Vac，50Hz,Pout=3W 20 mA 18 V 170 mA 70 mAPP 80 KHz Vin=220Vac，50H 75 % Vin=198Vac~242Vac,Pout=3W 0.93 L*W*H 26*18.5*15 Output Characteristics load:6s1p Output Voltage Output Current=170mA Output Current Output Current Ripple Co=330uF Systems Characteristics Switching frequency Efficiency Power Factor PCB Size Dimming Mode - Protection function Triac/No-triac mm - OTP, OVP, 3.Terminal Description Pin Name Description L AC line input N AC line input LED+ LED output (+) LED- LED output (-) 1 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 4. Test Setup (Note) This evaluation board is a high voltage. Should be handled carefully. During operation, do not touch the evaluation board. (1) Recommended Test Setup ・Connect L and N to AC power. ・Please connect the measuring instrument and LED. (LED: 6LED series connected, VF = 3V, IF = 170mA) AC Power Supply VAC:220Vrms DMM VOUT + - DMM IOUT + - (2) How to check • Make sure that the terminals are connected correctly, and then turn on the AC POWER. • LED light ,and the same time VOUT = 23V, IOUT = 300mA .The EVB working properly. 2 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 5. PCB layout MB39C601MB39C601 -EVBEVB-CN01 Top view(top side) Top view (bottom side) Board Layout (bottom side)) Board Layout (top side) 3 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 6. Schematic 4 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 7. BOM List COMPON DESCRIPTION ENT 1 U1 LED driver IC, SOP-8 NO PART No. MFR MB39C601 Fujitsu 2 R6 Chip resistor, 5.1RΩ, ±5%,1/10W, 0603 RC0603JR-075R1L YAGEO 3 R11 Chip resistor, 33KΩ, ±1%,1/10W, 0603 RC0603FR-0733KL YAGEO 4 R13 Chip resistor, 43KΩ, ±1%,1/10W, 0603 RC0603FR-0743KL YAGEO 5 R3 Chip resistor, 110KΩ, ±1%,1/10W, 0603 RC0603FR-07110KL YAGEO 6 R4 Chip resistor, 200KΩ, ±5%,1/10W, 0603 RC0603JR-07200KL YAGEO 7 R12 Chip resistor, 360KΩ, ±1%,1/10W, 0603 RC0603FR-07360KL YAGEO 8 R7 Chip resistor, 3RΩ, ±5%,,1/8W, 0805 RC0805JR-073RL YAGEO 9 R5 Chip resistor, 75KΩ, ±5%,1/8W, 0805 RC0805JR-0775KL YAGEO 10 R1 Chip resistor, 1MΩ, ±5%,1/8W, 0805 RC0805JR-071ML YAGEO 11 R8 Chip resistor, 150KΩ, ±5%,1/4W, 1206 RC1206JR-07150KL YAGEO 12 C1 13 C2 Aluminum electrolytic capacitor,25V 330uF 105℃ STD 8*12 Aluminum electrolytic capacitor,50V 10uF 105℃ STD 4*12 CHONG CHENGX 14 C9,C3,C8 Ceramic capacitor 50v 10nF, X7R, 0602 GRM188R71H103KA01D MuRata 15 C6 Ceramic capacitor 630v 470pF, X7R, 1206 GCM31A7U2J471JX01D MuRata 16 C4 Film polypropylone capacitor 4.7nF 630V CBB STD STD 17 D1 Diode Schottky 100V 1A,SMA SS110 MCC 18 D2 Ultra fast200mA 175V,SOT-23 MMBD1404 Fairchild 19 D3 Zener diode Glass 500mW, 18V, LL34 STD STD 20 D4 Ultra fast 800V 1A ,SMA STTH108A ST 21 BR1 Bridge rectifier,0.5A,600V,SO-4 MB6S Fairchild 22 Q1 N-mosfet,800V,3.8ohm,2.5A,IPAK STD3NK80 ST 23 T1 Transformer Lp=1mH, Np: Ns: Na=160T:27T:21T STD BZD 5 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 8. Transformer Specification 1, Magnetic core:EPC13 ,PC40，Bobbin 5pins+5 pins，horizontal type； 2, Primary windings inductance :Lp=1mH (100 KHz)，Air gap in the column and inductance value is1mH ±10%,Leakinginductance as small as possible. 3, Sandwich winding, dipping, cut short 2pin, pull out or cut short 4pin、5pin、8pin winding instruction Winding start pin→end pin Name （ Np-1 primary Ns ） （secondary） （ Na auxiliary （ 1→2 10→9 Wire Diameter mm （ ） 0.12（Inner diameter） 0.28（Inner diameter） Turns 75 27 ） 7→6 0.12 (Inner diameter ） 21 ） 2→3 0.12 Inner diameter 75 Np-2 primary （ 6/ 15 ） Wire Insulation properties tape Ordinary enameled wire Ordinary enameled wire Ordinary enameled wire Ordinary enameled wire 3layers 3 layers 3 layers 3 layers Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 9. Property data 9-2 Power Factor 1 1 0.9 0.95 0.8 0.9 Power Factor PF Conversion efficiency η 9-1 Efficiency 0.7 0.6 0.5 0.4 0.3 0.85 0.8 0.75 0.7 0.65 0.2 0.6 0.1 0.55 0.5 0 190 200 210 220 230 240 Input Voltage 50Hz Vac [V] 190 200 210 220 230 240 Input Voltage 50Hz Vac [V] Load：6LEDs in series Load：6LEDs in series Output Current ILED [mA] 9-3 Line regulation 200 180 160 140 120 100 80 60 40 20 0 190 200 210 220 230 240 Input Voltage 50Hz Vac [V] Load：6LEDs in series 6 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED VAC=220V, 50Hz. LED =6 pcs in series 9-6 Switching Waveform 9-5 Output Ripple VSW(Q1 drain) VBULK VOUT IOUT IOUT 9-8 TurnTurn-Off Waveform 9-7 Turn Turn--On Waveform VBULK VBULK VDD VDD VOUT VOUT IOUT IOUT 9-9 LED Open Waveform VSW(Q1 drain) VDD VOUT IOUT Do not Open too long Do not short too long 7 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 10. Evaluation board picture Bottom View Top View 9 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED 11. Revision History Name Version MB39C601-EVB-CN01 Rev 1.0 Remark Specifications are subject to change without notice. For further information please contact each office. All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of FUJITSU SEMICONDUCTOR device; FUJITSU SEMICONDUCTOR does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. FUJITSU SEMICONDUCTOR assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU SEMICONDUCTOR or any third party or does FUJITSU SEMICONDUCTOR warrant non-infringement of any third-party's intellectual property right or other right by using such information. FUJITSU SEMICONDUCTOR assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that FUJITSU SEMICONDUCTOR will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws. The company names and brand names herein are the trademarks or registered trademarks of their respective owners. 10 Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED Copyright 2013 FUJITSU SEMICONDUCTOR LIMITED