VS-ST173S Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Stud Version), 175 A FEATURES • All diffused design • Center amplifying gate • Guaranteed high dV/dt • Guaranteed high dI/dt • High surge current capability • Low thermal impedance TO-209AB (TO-93) • High speed performance • Compression bonding • Designed and qualified for industrial level PRODUCT SUMMARY • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 IT(AV) 175 A VDRM/VRRM 1000 V, 1200 V VTM 2.07 V TYPICAL APPLICATIONS ITSM at 50 Hz 4680 A • Inverters ITSM at 60 Hz 4900 A • Choppers IGT 200 mA • Induction heating TJ -40 °C to 125 °C Package TO-209AB (TO-93) Diode variation Single SCR • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 175 A 85 °C 275 IT(RMS) ITSM I2t 50 Hz 4680 60 Hz 4900 50 Hz 110 60 Hz 100 VDRM/VRRM 1000 to 1200 tq Range TJ A kA2s V 15 to 25 μs -40 to 125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST173S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 10 1000 1100 12 1200 1300 40 Revision: 11-Mar-14 Document Number: 94367 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173S Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el ITM 100 µs 180° el 50 Hz 500 320 790 550 4510 3310 400 Hz 450 290 810 540 1970 1350 1000 Hz 330 190 760 490 1050 680 2500 Hz 170 80 510 300 480 Voltage before turn-on Vd 50 50 VDRM VDRM VDRM Rise of on-state current dI/dt 50 Case temperature - 60 Equivalent values for RC circuit 85 47/0.22 V - 60 85 47/0.22 A 280 50 Recovery voltage Vr UNITS A/μs 60 85 °C μF 47/0.22 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) IT(RMS) Maximum peak, one half cycle, non-repetitive surge current ITSM TEST CONDITIONS 180° conduction, half sine wave °C 275 4680 t = 10 ms t = 10 ms I2t A 85 t = 10 ms t = 8.3 ms t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied 4900 100 % VRRM reapplied 4120 No voltage reapplied UNITS 175 DC at 75 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES A 3940 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 110 100 77 kA2s 71 Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1100 Maximum peak on-state voltage VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.07 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.55 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.58 Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.87 High level value of forward slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.82 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s V m mA SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current Typical delay time dI/dt td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5 source tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/μs VR = 50 V, tp = 500 μs, dV/dt: See table in device code minimum Maximum turn-off time maximum TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt VALUES UNITS 1000 A/μs 1.1 15 μs 25 Revision: 11-Mar-14 Document Number: 94367 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173S Series www.vishay.com Vishay Semiconductors BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 500 V/μs Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power TJ = TJ maximum, f = 50 Hz, d% = 50 PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD 60 10 10 TJ = TJ maximum, tp 5 ms 20 5 TJ = 25 °C, VA = 12 V, Ra = 6 TJ = TJ maximum, rated VDRM applied W A V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.105 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads 31 (275) Lubricated threads 24.5 (210) Mounting torque, ± 10 % Approximate weight 280 Case style See dimensions - link at the end of datasheet °C K/W N·m (lbf · in) g TO-209AB (TO-93) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.016 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 11-Mar-14 Document Number: 94367 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173S Series www.vishay.com Vishay Semiconductors 130 130 120 110 Ø Conduction angle 100 30 °C 60 °C 90 90 °C 180 °C Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) ST173S Series RthJC (DC) = 0.105 K/W ST173S Series RthJC (DC) = 0.105 K/W 120 110 Ø 100 Conduction period 90 90° 80 30° 120 °C DC 120° 80 70 0 20 40 60 80 100 120 140 160 180 80 40 0 Average On-State Current (A) 160 120 200 240 280 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 20 40 60 80 0.3 200 R -Δ 0 W 0 K/ 50 ST173S Series TJ = 125 °C 08 Conduction angle 0. 100 = Ø 250 SA 150 0. 16 0.2 K/W K/ W W 200 R th RMS limit 300 K/ 250 1 180° 120° 90° 60° 30° 300 Maximum Average On-State Power Loss (W) 350 0. Maximum Average On-State Power Loss (W) 180° 60° K/W 0.4 K/W 0.5 K/W 0.8 K /W 150 100 1.2 K/W 50 0 100 120 140 160 180 50 25 Average On-State Current (A) 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics 500 500 90° 30° 400 180° DC 60° 300 RMS limit 200 Ø Conduction period 100 ST173S Series TJ = 125 °C 0 0 40 80 120 160 200 240 Average On-State Current (A) 280 Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 120° R 400 th 0.1 SA = 0. 8 K/ W 0.1 6 0.2 K/W K/W 0.3 K/W 0.4 K 0.5 K /W /W 0.8 K/W 1.2 K/W 300 200 100 K/ W -Δ R 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 11-Mar-14 Document Number: 94367 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173S Series www.vishay.com 1 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 Transient Thermal Impedance ZthJC (K/W) Peak Half Sine Wave On-State Current (A) 4500 Vishay Semiconductors 3500 3000 2500 Steady state value RthJC = 0.105 K/W (DC operation) 0.1 0.01 ST173S Series ST173S Series 0.001 0.001 2000 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristics 5000 4000 Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 3500 3000 2500 2000 Qrr - Maximum Reverse Recovery Charge (µC) 250 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. 4500 Peak Half Sine Wave On-State Current (A) 0.1 Square Wave Pulse Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current A 00 =5 A I TM 00 =3 I TM 0A = 20 I TM ST173S Series TJ = 125 °C 200 150 I TM = 100 A 100 ITM = 50 A 50 ST173S Series 1500 0.01 0 0.1 1 0 Pulse Train Duration (s) 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/µs) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 9 - Reverse Recovered Current Characteristics 160 10 000 ST173S Series ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A 140 Irr - Maximum Reverse Recovery Current (A) Instantaneous On-State Current (A) 0.01 1000 TJ = 125 °C TJ = 25 °C 120 100 80 60 40 ST173S Series TJ = 125 °C 20 0 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 100 Instantaneous On-State Voltage (V) dI/dt - Rate of Fall of On-State Current (A/µs) Fig. 7 - On-State Voltage Drop Characteristics Fig. 10 - Reverse Recovery Current Characteristics Revision: 11-Mar-14 Document Number: 94367 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173S Series www.vishay.com Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 200 500 400 1000 1000 100 50 Hz 1500 2000 2500 3000 ST173S Series Sinusoidal pulse TC = 60 °C tp 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 Vishay Semiconductors 100 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 100 500 400 200 1000 1000 50 Hz 1500 2000 ST173S Series Sinusoidal pulse TC = 85 °C 2500 tp 3000 100 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 500 1000 1000 1500 2500 50 Hz 400 200 100 2000 3000 100 5000 tp ST173S Series Trapezoidal pulse TC = 60 °C dI/dt = 50 A/µs Peak On-State Current (A) Peak On-State Current (A) 10 000 10 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 500 50 Hz 200 100 1000 1500 2000 2500 100 400 3000 5000 ST173S Series Trapezoidal pulse TC = 85 °C dI/dt = 50 A/µs tp 10 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 500 400 200 50 Hz 100 1000 1500 5000 100 2000 2500 10 000 tp ST173S Series Trapezoidal pulse TC = 60 °C dI/dt = 100 A/µs 10 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 2000 100 500 1000 1500 400 200 100 50 Hz 2500 5000 10 000 tp ST173S Series Trapezoidal pulse TC = 85 °C dI/dt = 100 A/µs 10 10 100 1000 10 000 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics Revision: 11-Mar-14 Document Number: 94367 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173S Series www.vishay.com Vishay Semiconductors 100 000 10 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 20 joules per pulse 4 7.5 2 1 1000 0.5 0.3 0.2 0.1 100 ST173S Series Sinusoidal pulse tp ST173S Series Rectangular pulse dI/dt = 50 A/µs 10 000 20 joules per pulse 5 10 2 3 1000 1 0.4 0.5 0.3 0.2 100 0.1 tp 10 10 10 100 1000 10 10 000 100 1000 10 000 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs IGD 0.1 0.001 0.01 TJ = 40 °C VGD tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms (b) TJ = 25 °C 1 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) Device: ST173S Series 0.1 (2) (3) (4) Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Revision: 11-Mar-14 Document Number: 94367 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST173S Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- ST 17 3 S 12 P F K 0 - 1 2 3 4 5 6 7 8 9 10 11 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 3 = Fast turn-off 5 - S = Compression bonding stud 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16 x 1.5 8 - Reapplied dV/dt code (for tq test condition) 9 - tq code 10 - 0 = Eyelet terminals (gate and aux. cathode leads) 1 = Fast-on terminals (gate and aux. cathode leads) dV/dt - tq combinations available dV/dt (V/µs) 15 18 tq (µs) 20 25 30 20 CL CP CK CJ - 50 DP DK DJ DH 100 EP EK EJ EH 200 FP* FK* FJ FH 400 HK HJ HH * Standard part number. All other types available only on request. 2 = Flag terminals (for cathode and gate terminals) 11 - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95079 Revision: 11-Mar-14 Document Number: 94367 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-209AB (TO-93) DIMENSIONS - TO-209AB (TO-93) in millimeters (inches) 4 (0.16) MAX. 19 (0.75) MAX. MI N. Ceramic housing 7) 8.5 (0.33) DIA. 86 )M IN . 9.5 (0. 3 4.3 (0.17) DIA. (0. Flexible leads 22 C.S. 25 mm2 (0.039 s.i.) Red shrink White shrink Fast-on Terminals AMP. 280000-1 REF-250 27.5 (1.08) MAX. DIA. 27.5 (1.08) MAX. 16 (0.63) MAX. 90 (3.54) MIN. White gate 220 (8.66) ± 10 (0.39) C.S. 0.4 mm2 (0.006 s.i.) Red cathode 38.5 (1.52) MAX. 210 (8.26) ± 10 (0.39) Red silicon rubber SW 32 3/4"-16UNF-2A (1) 35 (1.38) MAX. Note (1) For metric device: M16 x 1.5 - length 21 (0.83) maximum Document Number: 95079 Revision: 01-Aug-07 For technical questions, contact: [email protected] www.vishay.com 1 Outline Dimensions TO-209AB (TO-93) Vishay Semiconductors DIMENSIONS - TO-209AB (TO-93) FLAG TERMINALS in millimeters (inches) Ceramic housing 22 (0.89) 14 (0.55) 38.5 (1.52) MAX. 1.5 (0.06) DIA. DIA. 27.5 (1.08) MAX. 16 (0.63) MAX. 27.5 (1.08) MAX. 80 (3.15) MAX. 13 (0.51) DIA. 6.5 (0.25) SW 32 3/4"-16UNF-2A (1) 3 (0.12) Note (2) For metric device: M16 x 1.5 - length 21 (0.83) maximum www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 95079 Revision: 01-Aug-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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