Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG410W
NPN 22 GHz wideband transistor
Product specification
Supersedes data of 1997 Oct 29
1998 Mar 11
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
FEATURES
PINNING
 Very high power gain
PIN
DESCRIPTION
 Low noise figure
1
emitter
 High transition frequency
2
base
 Emitter is thermal lead
3
emitter
 Low feedback capacitance.
4
collector
APPLICATIONS
 RF front end
 Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
handbook, halfpage
3
4
 Radar detectors
 Pagers
 Satellite television tuners (SATV)
2
 High frequency oscillators.
Top view
DESCRIPTION
1
MSB842
Marking code: P4.
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter


10
V
VCEO
collector-emitter voltage
open base


4.5
V
IC
collector current (DC)

10
12
mA
mW
Ptot
total power dissipation
Ts  110 C


54
hFE
DC current gain
IC = 10 mA; VCE = 2 V; Tj = 25 C
50
80
120
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz

45

fF
fT
transition frequency
IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 
22

GHz
Gmax
maximum power gain
IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 C 
21

dB
F
noise figure
IC = 1 mA; VCE = 2 V; f = 2 GHz; S = opt
1.2

dB

CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1998 Mar 11
2
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

10
V
VCEO
collector-emitter voltage
open base

4.5
V
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
Ptot
total power dissipation
Tstg
Tj

1
V

12
mA

54
mW
storage temperature
65
+150
C
operating junction temperature

150
C
Ts  110 C; note 1; see Fig.2
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
MGD960
60
handbook, halfpage
Ptot
(mW)
40
20
0
0
40
80
120
Ts (°C)
160
Fig.2 Power derating curve.
1998 Mar 11
3
VALUE
UNIT
750
K/W
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
IC = 2.5 A; IE = 0
10


V
V(BR)CEO
collector-emitter breakdown
voltage
IC = 1 mA; IB = 0
4.5


V
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 A; IC = 0
1


V
ICBO
collector-base leakage current
IE = 0; VCB = 4.5 V


15
nA
hFE
DC current gain
IC = 10 mA; VCE = 2 V; see Fig.3
50
80
120
Cc
collector capacitance
IE = ie = 0; VCB = 2 V; f = 1 MHz

220

Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz

400

fF
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz;
see Fig.4

45

fF
fT
transition frequency
IC = 10 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 C; see Fig.5

22

GHz
Gmax
maximum power gain; note 1
IC = 10 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 C; see Figs 7 and 8

21

dB
insertion power gain
IC = 10 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 C; see Fig.8

18

dB
noise figure
IC = 1 mA; VCE = 2 V;

f = 900 MHz; S = opt; see Fig.13
0.9

dB
IC = 1 mA; VCE = 2 V; f = 2 GHz;
S = opt; see Fig.13

1.2

dB
S 21
2
F
fF
PL1
output power at 1 dB gain
compression
IC = 10 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS opt; ZL = ZL opt; note 2

5

dBm
ITO
third order intercept point
IC = 10 mA; VCE = 2 V; f = 2 GHz;
ZS = ZS opt; ZL = ZL opt; note 2

15

dBm
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.
1998 Mar 11
4
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
MGG717
120
MGG718
100
handbook, halfpage
handbook, halfpage
Cre
(fF)
hFE
100
80
80
(1)
(2)
(3)
60
60
40
40
20
20
0
0
0
4
8
12
16
IC (mA)
0
1
(1) VCE = 3 V.
(2) VCE = 2 V.
(3) VCE = 1 V.
IC = 0; f = 1 MHz.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MGG719
25
2
3
4
Feedback capacitance as a function of
collector-base voltage; typical values.
MGG720
30
handbook, halfpage
5
VCB (V)
handbook, halfpage
fT
(GHz)
MSG
(dB)
20
20
15
10
10
5
0
1
10
IC (mA)
0
102
0
4
VCE = 2 V; f = 2 GHz; Tamb = 25 C.
VCE = 2 V; f = 900 MHz.
Fig.5
Fig.6
Transition frequency as a function of
collector current; typical values.
1998 Mar 11
5
8
12
IC (mA)
16
Maximum stable gain as a function of
collector current; typical values.
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
MGG721
30
MGG722
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
MSG
MSG
Gmax
20
30
S21
20
10
10
0
0
0
4
8
12
16
102
10
IC (mA)
VCE = 2 V; f = 2 GHz.
IC = 10 mA; VCE = 2 V.
Fig.7
Fig.8
Gain as a function of collector current;
typical values.
103
Gain as a function of frequency;
typical values.
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
0°
0
40 MHz
3 GHz
5
0.2
0.5
2
−135°
−45°
1
1.0
−90°
MGG724
IC = 10 mA; VCE = 2 V; Zo = 50 
Fig.9 Common emitter input reflection coefficient (S11); typical values.
1998 Mar 11
6
f (MHz)
104
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
90°
handbook, full pagewidth
135°
45°
3 GHz
40 MHz
180°
50
40
30
20
0°
10
−135°
−45°
−90°
MGG725
IC = 10 mA; VCE = 2 V.
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
90°
handbook, full pagewidth
135°
45°
3 GHz
0.1
0.08
180°
0.06
0.04
0.02
0°
40 MHz
−135°
−45°
−90°
MGG726
IC = 10 mA; VCE = 2 V.
Fig.11 Common emitter reverse transmission coefficient (S12); typical values.
1998 Mar 11
7
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
90°
handbook, full pagewidth
1.0
1
135°
0.8
45°
2
0.5
0.6
0.2
0.4
5
0.2
180°
0.2
0
0.5
1
2
5
40 MHz
0°
0
5
0.2
3 GHz
0.5
2
−135°
−45°
1
1.0
−90°
MGG727
IC = 10 mA; VCE = 2 V; Zo = 50 
Fig.12 Common emitter output reflection coefficient (S22); typical values.
Noise data
VCE = 2 V; typical values.
IC
(mA)
f
(MHz)
900
2000
Fmin
(dB)
mag
angle
rn
()
1
0.8
0.73
11.2
0.56
2
0.9
0.58
10.1
0.43
4
1.1
0.40
10.1
0.33
6
1.3
0.28
11.0
0.30
8
1.5
0.20
8.0
0.30
10
1.7
0.14
10.5
0.27
12
1.9
0.06
10.1
0.25
14
2.1
0.05
14.2
0.26
1
1.2
0.64
35.7
0.57
2
1.2
0.50
35.8
0.44
4
1.4
0.34
34.4
0.37
6
1.6
0.25
33.7
0.34
8
1.8
0.17
34.5
0.35
10
2.0
0.12
35.8
0.34
12
2.2
0.05
38.0
0.35
14
2.4
0.03
44.8
0.34
1998 Mar 11
MGG723
3
handbook, halfpage
Fmin
(dB)
2
(1)
(2)
1
0
0
4
8
12
IC (mA)
16
(1) f = 2 GHz; VCE = 2 V.
(2) f = 900 MHz; VCE = 2 V.
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
8
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
SPICE parameters for the BFG410W die
SEQUENCE No.
PARAMETER
VALUE
SEQUENCE No.
UNIT
(2)(3)
PARAMETER
VALUE
UNIT
1
IS
19.42
aA
39
Cbp
145
fF
2
BF
145.0

40 (2)
Rsb1
25

(3)
Rsb2
19

3
NF
0.993

4
VAF
31.12
V
Notes
5
IKF
125.0
mA
6
ISE
123.6
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
3.000

8
BR
11.37

9
NR
0.985

10
VAR
1.874
V
11
IKR
50.00
mA
12
ISC
199.6
aA
13
NC
1.546

14
RB
35.00

15
IRB
0.000
A
16
RBM
15.00

17
RE
432.0
m
18
RC
4.324

XTB
1.500

(1)
EG
1.110
eV
21 (1)
XTI
3.000

22
CJE
128.0
fF
23
VJE
900.0
mV
24
MJE
0.346

25
TF
4.122
ps
19 (1)
20
41
2. Bonding pad capacity Cbp in series with substrate
resistance Rsb1 between B and E.
3. Bonding pad capacity Cbp in series with substrate
resistance Rsb2 between C and E.
C cb
handbook, halfpage
L1
B
L2
B'
C be
C'
E'
C
Cce
MGD956
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc)
fc = scaling frequency = 1 GHz.
26
XTF
68.20

27
VTF
2.004
V
28
ITF
0.627
A
29
PTF
0.000
deg
30
CJC
56.68
fF
31
VJC
556.9
mV
Cbe
80
fF
32
MJC
0.207

Ccb
2
fF
33
XCJC
0.500

Cce
80
fF
1.1
nH
Fig.14 Package equivalent circuit SOT343R2.
List of components (see Fig.14)
DESIGNATION
VALUE
UNIT
34 (1)
TR
0.000
ns
L1
35 (1)
CJS
274.8
fF
L2
1.1
nH
36 (1)
VJS
418.3
mV
L3 (note 1)
0.25
nH
37 (1)
MJS
0.239

38
FC
0.550

1998 Mar 11
Note
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
9
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
06-03-16
SOT343R
1998 Mar 11
EUROPEAN
PROJECTION
10
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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However, NXP Semiconductors does not give any
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accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
1998 Mar 11
11
NXP Semiconductors
Product specification
NPN 22 GHz wideband transistor
BFG410W
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System of IEC 60134) will cause permanent damage to
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(proper) operation of the device at these or any other
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operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
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1998 Mar 11
12
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Printed in The Netherlands
R77/04/pp13
Date of release: 1998 Mar 11
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