Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFM520
Dual NPN wideband transistor
Product specification
Supersedes data of 1995 Sep 04
1996 Oct 08
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
FEATURES
PINNING - SOT363A
 Small size
PIN
SYMBOL
 Temperature and hFE matched
1
b1
base 1
 Low noise and high gain
2
e1
emitter 1
 High gain at low current and low capacitance at low
voltage
3
c2
collector 2
4
b2
base 2
5
e2
emitter 2
6
c1
collector 1
 Gold metallization ensures excellent reliability.
DESCRIPTION
APPLICATIONS
 Oscillator and buffer amplifiers
6
 Balanced amplifiers
5
4
c1
handbook, halfpage
 LNA/mixers.
b1
c2
b2
DESCRIPTION
e1
Dual transistor with two silicon NPN RF dies in a surface
mount 6-pin SOT363 (S-mini) package. The transistor is
primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
1
2
e2
3
Top view
MAM210
Marking code: N2.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
0.4

pF
IC = 20 mA; VCE = 3 V; f = 900 MHz 
9

GHz
insertion power gain
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 C
13
14.5

dB
GUM
maximum unilateral power gain
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 C

15

dB
F
noise figure
IC = 5 mA; VCE = 3 V;
f = 900 MHz; S = opt

1.2
1.6
dB
Rth j-s
thermal resistance from junction
to soldering point
single loaded


230
K/W
double loaded


115
K/W
Cre
feedback capacitance
Ie = 0; VCB = 3 V; f = 1 MHz
fT
transition frequency
s 21
2
1996 Oct 08
2

NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor

VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base

8
V
VEBO
emitter-base voltage
open collector

2.5
V
IC
DC collector current

70
mA
Ptot
total power dissipation

1
W
Tstg
storage temperature
65
+175
C
Tj
junction temperature

175
C
up to Ts = 118 C; note 1
20
V
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to soldering point; note 1
CONDITIONS
UNIT
single loaded
230
K/W
double loaded
115
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1996 Oct 08
VALUE
3
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
IC = 2.5 A; IE = 0
20


V(BR)CBO
collector-base breakdown voltage
V
V(BR)CEO
collector-emitter breakdown voltage IC = 10 A; IB = 0
8


V
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 A; IC = 0
2.5


V
ICBO
collector-base leakage current
VCB = 6 V; IE = 0


50
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
DC characteristics of the dual transistor
hFE
ratio of highest and lowest DC
current gain
IC1 = IC2 = 20 mA;
VCE1 = VCE2 = 6 V
1
1.2

VBEO
difference between highest and
lowest base-emitter voltage
(offset voltage)
IE1 = IE2 = 30 mA; Tamb = 25 C
0
1

mV
AC characteristics of any single transistor
fT
transition frequency
IC = 20 mA; VCE = 3 V; f = 1 GHz

9

GHz
Cc
collector capacitance
IE = ie = 0; VCB = 3 V; f = 1 MHz

0.5

pF
Cre
feedback capacitance
IC = 0; VCB = 3 V; f = 1 MHz

0.4

pF
GUM
maximum unilateral power gain;
note 1
IC = 20 mA; VCE = 3 V;
Tamb = 25 C; f = 900 MHz

15

dB
IC = 20 mA; VCE = 3 V;
Tamb = 25 C; f = 2 GHz

9

dB
insertion power gain
IC = 20 mA; VCE = 3 V;
f = 900 MHz; Tamb = 25 C
13
14.5

dB
noise figure
IC = 5 mA; VCE = 3 V;
f = 900 MHz; S = opt

1.2
1.6
dB
IC = 20 mA; VCE = 3 V;
f = 900 MHz; S = opt

1.7
2.1
dB
IC = 5 mA; VCE = 3 V;
f = 2 GHz; S = opt

1.9

dB
s 21
2
F
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
1996 Oct 08
4
s 21 2
G UM = 10 log -------------------------------------------------------dB
 1 – s 11 2   1 – s 22 2 
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
MRA705
MBG228
1.5
12
handbook, halfpage
handbook, halfpage
Ptot
(mW)
fT
(GHz)
VCE = 6V
double loaded
1
8
VCE = 3V
single loaded
0.5
4
0
0
50
100
150
Ts (oC)
0
10−1
200
1
10
102
IC (mA)
f = 1 GHz; Tamb = 25 C.
Fig.2 Power derating as a function of soldering
point temperature; typical values.
Fig.3
MRA703
Transition frequency as a function of
collector current; typical values.
MRA704
0.6
250
handbook, halfpage
handbook, halfpage
hFE
Cre
(pF)
200
0.4
150
100
0.2
50
0
10−2
10−1
1
0
10 I (mA) 102
C
0
4
VCE = 6 V.
IC = 0; f = 1 MHz.
Fig.4
Fig.5
DC current gain as a function of collector
current; typical values.
1996 Oct 08
5
8
VCB (V)
12
Feedback capacitance as a function of
collector-base voltage; typical values.
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
MGG203
20
MGG204
20
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
MSG/Gmax
16
16
GUM
12
12
MSG/Gmax
8
8
4
4
0
0
10
20
IC (mA)
GUM
0
30
0
10
f = 900 MHz; VCE = 3 V.
f = 2 GHz; VCE = 3 V.
Fig.6
Fig.7
Gain as a function of collector current;
typical values.
20
IC (mA)
30
Gain as a function of collector current;
typical values.
MGG205
MGG206
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
40
40
GUM
GUM
30
MSG/Gmax
30
MSG/Gmax
20
20
10
10
0
10
102
103
f (MHz)
0
10
104
IC = 5 mA; VCE = 3 V.
IC = 20 mA; VCE = 3 V.
Fig.8
Fig.9
Gain as a function of frequency; typical
values.
1996 Oct 08
6
102
103
f (MHz)
104
Gain as a function of frequency; typical
values.
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
MRA714
5
handbook, halfpage
Fmin
(dB)
4
f = 900 MHz
MRA715
20
Gass
handbook, halfpage
(dB)
15
(dB)
4
5
Fmin
IC = 5 mA
20 mA
20
Gass
(dB)
15
Gass
1000 MHz
Gass
3
10
3
10
5
2
5
0
1
2000 MHz
2
2000 MHz
1000 MHz
1
Fmin
20 mA
900 MHz
Fmin
0
5 mA
500 MHz
0
1
10
IC (mA)
−5
102
0
102
103
f (MHz)
−5
104
VCE = 3 V.
VCE = 3 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
1996 Oct 08
7
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
APPLICATION INFORMATION
SPICE parameters for any single BFM520 die
C1
handbook, halfpage
SEQUENCE No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
36(1)
37(1)
38
PARAMETER
VALUE
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RB
IRB
RBM
RE
RC
XTB
EG
XTI
CJE
VJE
MJE
TF
XTF
VTF
ITF
PTF
CJC
VJC
MJC
XCJC
TR
CJS
VJS
MJS
FC
1.016
220.1
1.000
48.06
510.0
283.0
2.035
100.7
0.988
1.692
2.352
24.48
1.022
10.00
1.000
10.00
0.775
2.210
0.000
1.110
3.000
1.245
600.0
0.258
8.616
6.788
1.414
110.3
45.01
447.6
189.2
0.071
0.130
543.7
0.000
750.0
0.000
0.780
fA


V
mA
fA



V
mA
aA


A




eV

pF
mV

ps

V
mA
deg
fF
mV


ps
F
mV


LP
B1
LP
T1
LB
T2
LE
B2
LB
LE
E1
MBG188
E2
Fig.12 Package equivalent circuit SOT363A
(inductance only).
Lead inductances (nH)
LP
0.4
LB
0.6
LE
1.0
E2
3
E1
27
6
B2
1
27
3
C2
3
17
36
48
C1
48
36
17
3
6
B1
E2
E1
B2
C2
MBG189
Fig.13 Package capacitance (fF) between
indicated nodes.
Note
1. These parameters have not been extracted,
the default values are shown.
1996 Oct 08
C2
UNIT
8
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT363
D
E
B
y
X
A
HE
6
5
v M A
4
Q
pin 1
index
A
A1
1
2
e1
3
bp
c
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.30
0.20
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.25
0.15
0.2
0.2
0.1
OUTLINE
VERSION
SOT363
1996 Oct 08
REFERENCES
IEC
JEDEC
JEITA
SC-88
9
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
Right to make changes  NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
DEFINITIONS
Product specification  The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use  NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability  Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications  Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
1996 Oct 08
10
NXP Semiconductors
Product specification
Dual NPN wideband transistor
BFM520
Export control  This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Quick reference data  The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products  Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values  Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
Semiconductors’ product specifications.
Terms and conditions of commercial sale  NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license  Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
1996 Oct 08
11
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp12
Date of release: 1996 Oct 08
Similar pages