DISCRETE SEMICONDUCTORS DATA SHEET BFE520 NPN wideband differential transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband differential transistor FEATURES BFE520 PINNING - SOT353B • Small size PIN SYMBOL b1 1 base 1 e 2 emitter • Balanced configuration b2 3 base 2 • hFE matched c2 4 collector 2 • Continues to operate at VCE < 1 V. c1 5 collector 1 • High power gain at low bias current and voltage • Temperature matched DESCRIPTION APPLICATIONS • Single balanced mixers 3 handbook, halfpage • Balanced amplifiers 2 1 c1 • Balanced oscillators. c2 b1 b2 DESCRIPTION 4 Emitter coupled dual NPN silicon RF transistor in a surface mount 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners. e 5 Top view MAM211 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Any single transistor Cre feedback capacitance CBC Ie = 0; VCB = 3 V; f = 1 MHz − 0.35 0.4 pF MSG/Gmax maximum power gain IC = 20 mA; VCE = 3 V; f = 900 MHz − 16 − dB IC = 20 mA; VCE = 3 V; f = 2 GHz − 9 − dB IC = 5 mA; VCE = 3 V; f = 900 MHz; ΓS = Γopt − 1.1 1.6 dB IC = 5 mA; VCE = 3 V; f = 2 GHz; ΓS = Γopt − 1.9 − dB F noise figure hFE DC current gain IC = 20 mA; VCE = 3 V 60 120 250 Rth j-s thermal resistance from junction to soldering point single loaded − − 230 K/W double loaded − − 115 K/W 1996 Oct 08 2 Philips Semiconductors Product specification NPN wideband differential transistor BFE520 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Any single transistor VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 8 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation − 1 W Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C up to Ts = 118 °C; note 1 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point; note 1 CONDITIONS VALUE UNIT single loaded 230 K/W double loaded 115 K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 1996 Oct 08 3 Philips Semiconductors Product specification NPN wideband differential transistor BFE520 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics of any single transistor IC = 2.5 µA; IE = 0 20 − − V 8 − − V 2.5 − − V − 50 nA 120 250 V(BR)CBO collector-base breakdown voltage V(BR)CEO collector-emitter breakdown voltage IC = 10 µA; IB = 0 V(BR)EBO emitter-base breakdown voltage IE = 2.5 µA; IC = 0 ICBO collector-base leakage current IE = 0; VCB = 6 V − hFE DC current gain IC = 20 mA; VCE = 6 V 60 DC characteristics of the dual transistor ∆hFE ratio of highest and lowest DC current gain IC1 = IC2 = 20 mA; VCE1 = VCE2 = 6 V 1 1.2 − ∆VBEO difference between highest and lowest base-emitter voltage (offset voltage) IE1 = IE2 = 30 mA; Tamb = 25 °C 0 1 − mV AC characteristics of any single transistor fT transition frequency IC = 20 mA; VCE = 3 V; f = 1 GHz − 9 − GHz Cc collector capacitance IE = ie = 0; VCB = 3 V; f = 1 MHz − 0.4 0.45 pF Cre feedback capacitance IC = 0; VCB = 3 V; f = 1 MHz − 0.35 0.4 pF MSG/Gmax maximum power gain; note 1 IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C − 16 − dB IC = 20 mA; VCE = 3 V; f = 2 GHz; Tamb = 25 °C − 9 − dB insertion power gain IC = 20 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 °C 13 14 − dB noise figure IC = 5 mA; VCE = 3 V; f = 900 MHz; ΓS = Γopt − 1.1 1.6 dB IC = 5 mA; VCE = 3 V; f = 2 GHz; ΓS = Γopt − 1.9 − dB s 21 2 F Note 1. Maximum gain of the differential amplifier is higher because of internal emitter connection (see Fig.2). 1996 Oct 08 4 Philips Semiconductors Product specification NPN wideband differential transistor BFE520 APPLICATION INFORMATION SPICE parameters for any single BFE520 die C1 handbook, halfpage SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 PARAMETER VALUE IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VJS MJS FC 1.016 220.1 1.000 48.06 510.0 283.0 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 775.3 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.071 0.130 543.7 0.000 750.0 0.000 0.780 fA − − V mA fA − − − V mA aA − Ω µA Ω mΩ Ω − eV − pF mV − ps − V mA deg fF mV − − ps F mV − − LP B1 LP T1 LB T2 LE LB LE LP MBG190 E Fig.2 Package equivalent circuit SOT353B (inductance only). Lead inductances (nH) LP 0.4 LB 0.8 LE 0.6 E 35 B2 3.5 35 C2 2 35 36 C1 36 35 2 15 B1 E B2 C2 MBG191 Fig.3 Note 1. These parameters have not been extracted, the default values are shown. 1996 Oct 08 C2 UNIT 5 Package capacitance (fF) between indicated nodes. B2 Philips Semiconductors Product specification NPN wideband differential transistor BFE520 Typical application circuit +V handbook, full pagewidth CC IF out RF in LO in +VCC MBG192 Fig.4 Single balanced switching mixer amplifier, featuring high LO↔RF isolation and linearity. 1996 Oct 08 6 Philips Semiconductors Product specification NPN wideband differential transistor BFE520 PACKAGE OUTLINE 0.2 handbook, full pagewidth 1.0 0.8 0.8 0.6 0.17 0.10 0.1 0.0 0.3 0.1 0.65 0.65 1 0.25 0.15 (5x) 2 2.2 1.8 4 2.2 2.0 Dimensions in mm. Fig.5 SOT353. 1996 Oct 08 B 5 3 MSA365 0.2 M B 1.35 1.15 A 7 0.2 M A Philips Semiconductors Product specification NPN wideband differential transistor BFE520 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Oct 08 8