Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UTT100N06
Power MOSFET
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET

DESCRIPTION
1
The UTC UTT100N06 is an N-channel enhancement mode
Power FET using UTC’s advanced technology to provide customers
with a minimum on-state resistance and superior switching
performance.
It also can withstand high energy pulse in the avalanche and
commutation mode.

TO-220
FEATURES
* Fast switching speed
* 100A, 60V, R DS(ON) = 7mΩ @ V GS =10V
* Work below 175°C
* 100% avalanche tested
* Improved dv/dt capability

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
UTT100N06L-TA3-T
UTT100N06G-TA3-T
TO-220
Note: Pin Assignment: G: Gate D: Drain
S: Source
UTT100N06L-TA3-T
1
G
Pin Assignment
2
3
D
S
(1)Packing Type
(1) T: Tube
(2)Package Type
(2) TA3: TO-220
(3)Lead Free
(3) G: Halogen Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Packing
Tube
1 of 3
QW-R502-509.C
UTT100N06

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (T J =25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
RATINGS
UNIT
V DSS
60
V
V GSS
±20
V
Continuous
ID
100
A
Drain Current
Pulsed
I DM
400
A
Avalanche Energy
Single Pulsed
E AS
450
mJ
Peak Diode Recovery dv/dt
dv/dt
6
V/ns
Power Dissipation
PD
100
W
Junction Temperature
TJ
+150
°C
Storage Temperature
T STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
θ JA
θ JC
RATINGS
62.5
1.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T J =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
I D =250µA, V GS =0V
Drain-Source Leakage Current
I DSS
V DS =60V, V GS =0V
Forward
V GS =+20V, V DS =0V
Gate- Source Leakage Current
I GSS
Reverse
V GS =-20V, V DS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(TH)
V DS =V GS , I D =250µA
Static Drain-Source On-State Resistance
R DS(ON)
V GS =10V, I D =50A
DYNAMIC PARAMETERS
Input Capacitance
C ISS
Output Capacitance
C OSS
V GS =0V, V DS =25V, f=1.0MHz
Reverse Transfer Capacitance
C RSS
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate to Source Charge
Q GS
V GS =10V, V DS =30V, I D =100A
Gate to Drain Charge
Q GD
Turn-ON Delay Time
t D(ON)
Rise Time
tR
V DD =30V, VGS=10V, I D ≒100A,
R G =0.4Ω
Turn-OFF Delay Time
t D(OFF)
Fall-Time
tF
Transconductance
g FS
V DS =15V, I D =30A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
I SM
Drain-Source Diode Forward Voltage
V SD
I S =100A, V GS =0V
Resistance of Gate
RG
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
60
V
10
µA
+100 nA
-100 nA
1
3
7
V
mΩ
12900
1060
700
pF
pF
pF
500
50
33
90
130
768
280
nC
nC
nC
ns
ns
ns
ns
S
200
420
30
100
400
0.65
1.0
1.3
1.5
2
A
A
V
Ω
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QW-R502-509.C
UTT100N06
Power MOSFET
TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source
Breakdown Voltage
250
250
Drain Current, ID (µA)
Drain Current, ID (µA)
300
Drain Current vs. Gate Threshold Voltage
300
200
150
100
150
100
50
50
0
0
0
0
14
42
56
70
28
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
60
120
50
100
VGS=10V, ID=50A
40
30
20
0.5
1.5
1
2.5
2
Gate Threshold Voltage, VTH (V)
3
Drain Current vs. Source to Drain Voltage
Drain Current, ID (A)
Drain Current, ID (A)
200
80
60
40
20
10
0
0
0.05 0.1 0.15 0.2 0.25 0.3
Drain to Source Voltage, VDS (V)
0
0
0.2
0.4 0.6
0.8 1.0 1.2
Source to Drain Voltage, VSD (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-509.C
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