Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT75N02
Preliminary
Power MOSFET
75A, 25V N-CHANNEL
POWER MOSFET
„
1
DESCRIPTION
TO- 251
The UTC UT75N02 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
„
1
FEATURES
TO-220
* RDS(ON)< 7mΩ @ VGS=10V
* RDS(ON)< 8mΩ @ VGS=7V
„
SYMBOL
2.Drain
1.Gate
3.Source
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UT75N02L-TA3-T
UT75N02G-TA3-T
UT75N02L-TM3-T
UT75N02G-TM3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-220
TO-251
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
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„
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
VDSS
25
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
75
A
Pulsed Drain Current (Note 2)
IDM
170
A
Avalanche Current
IAR
60
A
Avalanche Energy
L=0.1mH
EAS
140
mJ
Repetitive Avalanche Energy (Note 3) L=0.05mH
EAR
5.6
mJ
TO-220
40
Power Dissipation
PD
W
TO-251
28
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature.
3. Duty cycle≤1%.
„
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220
TO-251
TO-220
TO-251
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
θJA
θJC
RATINGS
62.5
110
3.13
4.53
UNIT
°C/W
°C/W
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UT75N02
„
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS=0V, ID=250µA
VDS = 20V, VGS = 0V
VDS =20V, VGS = 0V, TJ = 125°C
VDS=0V, VGS=±20V
Gate-Source Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS= VGS, ID=250µA
On-State Drain Current (Note 1)
ID(ON) VDS = 10V, VGS = 10V
Static Drain-Source On-Resistance
VGS = 10V, ID = 30A
RDS(ON)
(Note 1)
VGS = 7V, ID = 24A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS VDS=15V, VGS=0 V, f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS (Note 2)
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDS = 15V, VGS = 10V, ID≈30A
Turn-OFF Delay Time
tD(OFF) RGS = 2.5Ω, RL = 1Ω,
Turn-OFF Fall-Time
tF
Total Gate Charge
QG
VDS=0.5V(BR)DSS, VGS=10V, ID=35A
Gate Source Charge
QGS
Gate Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Forward Voltage (Note 1)
VSD
IF = IS, VGS = 0V
Continuous Current
IS
Notes: 1. Pulse test : Pulse Width≤300μsec, Duty Cycle≤2%
2. Independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
25
25
250
±250
1
70
1.5
3
5
6
7
8
V
µA
µA
nA
V
A
mΩ
mΩ
5000
1800
800
pF
pF
pF
7
7
24
6
140
40
75
ns
ns
ns
ns
nC
nC
nC
1.3
75
V
A
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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