UNISONIC TECHNOLOGIES CO., LTD 80N08 Power MOSFET 80A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC advanced technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc. FEATURES * Trench FET Power MOSFETS Technology SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 80N08L-T47-T 80N08G-T47-T 80N08L-TA3-T 80N08G-TA3-T 80N08L-TQ2-T 80N08G-TQ2-T 80N08L-TQ2-R 80N08G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Package TO-247 TO-220 TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel 1 of 4 QW-R502-468.F 80N08 Power MOSFET MARKING INFORMATION PACKAGE MARKING TO-247 TO-220 TO-263 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-468.F 80N08 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ= 25 °C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Gate Source Voltage VGS ±20 V Continuous Drain Current ID 80 A Pulsed Drain Current IDM 320 A Avalanche Energy, Single Pulse EAS 810 mJ TO-247 300 W Power Dissipation PD TO-220/TO-263 250 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. L=0.1mH, IAS=80A, VDD=25V, RG=20Ω, Starting TJ =25°C. THERMAL DATA PARAMETER TO-247 Junction to Ambient TO-220/TO-263 TO-247 Junction to Case TO-220/TO-263 SYMBOL θJA θJC RATINGS 30 62 0.42 0.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=1mA, VGS=0V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V, TJ=25°C Gate-Source Leakage Current IGSS VDS=0V, VGS=±20V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=80A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=40V, RG=2.2Ω ID=80A, VGS=10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous IS Current Pulsed Current ISM Drain-Source Diode Forward Voltage VSD ISD=80A Reverse Recovery Time tRR IF= IS, dIF/dt=100A/µs VR=40V Reverse Recovery Charge QRR Note: 1. Defined by design. Not subject to production test. 2. Qualified at -20V and +20V. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.01 ±1 1 ±100 V µA nA 3.0 4.0 12 V mΩ 80 2.1 4700 1260 580 144 25 69 26 50 61 30 pF pF pF 180 37 116 80 0.9 110 470 320 1.3 140 590 nC nC nC ns ns ns ns A V ns nC 3 of 4 QW-R502-468.F 80N08 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 200 150 100 50 0 200 150 100 50 0 20 40 60 80 100 0 0 120 1 1.5 2 2.5 3 Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics Drain Current vs. Source to Drain Voltage 12 20 18 10 16 Drain Current, ID (A) Drain Current, ID (A) 0.5 14 12 10 VGS=10V, ID=20A 8 6 4 8 6 4 2 2 0 0 50 100 150 200 250 300 Drain to Source Voltage, VDS (mV) 0 0 0.2 0.4 0.6 0.8 1.0 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-468.F