UNISONIC TECHNOLOGIES CO., LTD IMX17 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES * *Two MMBT2222A chips in an SMT package. * Transistor elements are independent, eliminating interference. * High collector current. IC=500mA. * Mounting cost an area can be cut in half. EQUIVALENT CIRCUITS ORDERING INFORMATION Ordering Number Lead Free Halogen Free IMX17L-AG6 -R IMX17G-AG6-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-26 1 E1 Pin Assignment 2 3 4 5 B1 C2 E2 B2 6 C1 Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 4 QW-R215-001.D IMX17 DUAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Collector Power Dissipation PD 300 (TOTAL) mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: 1. 200mW per element must not be exceeded. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency (Note) Output Capacitance Note: Measured using pulse current. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT COB TEST CONDITIONS IC=100µA IC=1mA IE=100µA VCB=30V VEB=4V IC=500mA, IB=50mA VCE= 3V, IC= 100mA(note) VCE=5V, IE=-20mA, f=100MHz VCB= 10V, IE=0A, f=1MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 60 50 5 TYP MAX 0.1 0.1 0.6 390 120 250 7 UNIT V V V µA µA V MHz pF 2 of 4 QW-R215-00.D IMX17 DUAL TRANSISTOR ELECTRICAL CHARACTERISTIC CURVES Grounded Emitter Propagation Characteristics Collector Current : IC (mA) Collector Current : IC (mA) Grounded Emitter Output Characteristics Collector to Emitter Voltage : VBE (V) Base to Emitter Voltage : VBE (V) DC Current Gain vs. Collector Current ( Collector Current :IC (mA) Collector-emitter Saturation Voltage vs. Collector Current Collector Saturation Voltage : VCE(sat) Collector-emitter Saturation Voltage vs. Collector Current (V) Collector Current :IC (mA) Collector Saturation Voltage : VCE(sat) (V) ) DC Current Gain : hFE DC Current Gain : hFE DC Current Gain vs. Collector Current ( ) Collector Current : IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Collector Current : IC (mA) 3 of 4 QW-R215-00.D IMX17 DUAL TRANSISTOR ELECTRICAL CHARACTERISTIC CURVES(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R215-00.D