Datasheet

UTC 2SB772L
PNP EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
DESCRIPTION
The UTC 2SB772L is a medium power low voltage
transistor, designed for audio power amplifier, DC-DC
converter and voltage regulator.
1
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SD882L
TO-92L
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
VALUE
UNIT
VCBO
VCEO
VEBO
Pc
Ic
Ic
IB
Tj
TSTG
-40
-30
-5
0.5
-3
-7
-0.6
150
-55 ~ +150
V
V
V
W
A
A
A
°C
°C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation( Ta=25°C)
Collector Current(DC)
Collector Current(PULSE)
Base Current
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note 1)
SYMBOL
ICBO
IEBO
hFE1
hFE2
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
UTC
TEST CONDITIONS
VCB=-30V,IE=0
VEB=-3V,Ic=0
VCE=-2V,Ic=-20mA
VCE=-2V,Ic=-1A
Ic=-2A,IB=-0.2A
Ic=-2A,IB=-0.2A
VCE=-5V,Ic=-0.1A
VCB=-10V,IE=0,f=1MHz
UNISONIC TECHNOLOGIES
MIN
TYP
MAX UNIT
-1000
-1000
30
100
200
150
-0.3
-1.0
80
45
400
-0.5
-2.0
CO. LTD
nA
nA
V
V
MHz
pF
1
QW-R202-005,A
UTC 2SB772L
PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.2 Derating curve of safe
operating areas
Fig.1 Static characteristics
Fig.3 Power Derating
-IB=6mA
-IB=5mA
-IB=4mA
S/
b
50
lim
-IB=1mA
0
0
4
8
12
16
20
0
50
100
150
200
-50
Tc,Case Temperature(°C)
Fig.4 Collector Output
capacitance
10
0
-1
10
VCE=5V
2
10
IB=8mA
1
10
0
10
-3
10
-Ic,Collector current(A)
FT(MHz), Current gainbandwidth product
-2
10
1
10
-2
10
-1
10
10
0
1
10
Ic(max),Pulse
Ic(max),DC
10
Fig.7 DC current gain
150
200
10
mS
1m
S
0
-1
10
-2
10
10
0
1
10
2
10
Collector-Emitter Voltage
Ic,Collector current(A)
-Collector-Base Voltage(v)
100
S
1m
0.
1
10
50
Fig.6 Safe operating area
3
10
IE=0
f=1MHz
0
Tc,Case Temperature(°C)
Fig.5 Current gainbandwidth product
3
10
0
10
4
0
-50
-Collector-Emitter voltage(V)
2
10
8
d
ite
-IB=2mA
0
Output Capacitance(pF)
lim
ite
d
n
tio
-IB=3mA
0.4
100
pa
si
is
0.8
12
Power Dissipation(W)
1.2
- Ic Derating(%)
-IB=9mA
-IB=8MA
-IB=7mA
D
-Ic,Collector current(A)
150
1.6
Fig.8 Saturation Voltage
3
10
4
10
-Saturation Voltage(mV)
DC current Gain,H
FE
VCE=-2V
2
10
1
10
0
10
0
10
1
10
2
10
3
10
-Ic,Collector current(mA)
UTC
4
10
VBE(sat)
3
10
2
10
VCE(sat)
1
10
0
10
0
10
1
10
2
10
3
10
4
10
-Ic,Collector current(mA)
UNISONIC TECHNOLOGIES
CO. LTD
2
QW-R202-005,A
UTC 2SB772L
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES
CO. LTD
3
QW-R202-005,A
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