UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE . 1 TO-220 FEATURES * Reverse Biased SOA with Inductive Load @ Tc=100℃ * Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100℃ Typical tc = 290ns @ 1A, 100℃. * 700V Blocking Capability *Pb-free plating product number: MJE13003L APPLICATIONS * Switching Regulator’s, Inverters * Motor Controls * Solenoid/Relay drivers * Deflection circuits ORDERING INFORMATION Normal Order Number Lead Free Plating MJE13003-x-TA3-F-T MJE13003L-x-TA3-F-T Note: x: Rank, refer to Classification of hFE1. Package TO-220 Pin Assignment 1 2 3 B C E Packing Tube MJE13003L-x-TA3-F-T (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd (1)T: Tube (2) refer to Pin Assignment (3) TA3: TO-220 (4) x: refer to Classification of hFE1 (5) L: Lead Free Plating, Blank: Pb/Sn 1 of 7 QW-R203-017,F MJE13003 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage SYMBOL VCEO(SUS) VCEO VEBO IC ICM IB IBM IE IEM RATINGS UNIT 400 V 700 V 9 V Continuous 1.5 Collector Current A Peak (1) 3 Continuous 0.75 Base Current A Peak (1) 1.5 Continuous 2.25 Emitter Current A Peak (1) 4.5 Total Power Dissipation @ Ta=25℃ 1.4 W PD mW/℃ Derate above 25℃ 11.2 Total Power Dissipation @ TC=25℃ 40 W PD mW/℃ Derate above 25℃ 320 ℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance, Junction to Ambient SYMBOL Thermal Resistance, Junction to Case (1) Pulse Test: Pulse Width=5ms, Duty Cycle≤10% RθJA RATINGS 89 UNIT ℃/W RθJC 3.12 ℃/W ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS (Note) Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased Clamped Inductive SOA with base reverse biased ON CHARACTERISTICS (Note) DC Current Gain SYMBOL VCEO(SUS) IC=10 mA , IB=0 VCEO=Rated Value, ICEO VBE(OFF)=1.5 V IEBO VEB=9 V, IC=0 TYP MAX 400 TC=25°C TC=100℃ 1 5 1 See Figure 5 RBSOA See Figure 6 hFE1 hFE2 VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) fT Cob tD tR tS IC=0.5A, VCE=2V IC=1A, VCE=2V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=1A, IB=0.25A, TC=100℃ IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1A, IB=0.25A, TC=100℃ 8 5 IC=100mA, VCE=10V, f=1MHz VCB=10V, IE=0, f=0.1MHz 4 VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25μs, Duty Cycle≤1% tFALL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN Is/b Collector-Emitter Saturation Voltage DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product Output Capacitance SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time Fall Time TEST CONDITIONS 40 25 0.5 1 3 1 1 1.2 1.1 10 21 0.05 0.5 2 0.4 UNIT V mA mA V V MHz pF 0.1 1 4 0.7 μs μs μs μs 2 of 7 QW-R203-017,F MJE13003 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER Inductive Load, Clamped (Table 1) Storage Time Crossover Time Fall Time SYMBOL TEST CONDITIONS tSV tC MIN IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100℃ tFALL TYP MAX UNIT 1.7 0.29 0.15 4 0.75 μs μs μs Note: Pulse Test : PW=300μs, Duty Cycle≤2% CLASSIFICATION OF hFE1 RANK RANGE A 8 ~ 16 B 15 ~ 21 C 20 ~ 26 D 25 ~ 31 E 30 ~ 36 F 35 ~ 40 Table 1.Test Conditions for Dynamic Performance Resistive Switching Reverse Bias Safe Operating Area and Inductive Switching +5V Vcc 33 1N4933 MJE210 L Test Circuits 0.001μF 5V Pw 2N2222 1k 1k DUTY CYCLE≦10% tR, tF≦10ns 68 +125V Vclamp Ic RB +5V 5.1k IB Rc *SELECTED FOR≣1kV TUT SCOPE RB VCE 1k 1N4933 51 T.U.T. D1 2N2905 270 0.02μF NOTE PW and Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1 Circuit Values MR826* 33 1N4933 100 1/2W Coil Data : VCC=20V Ferroxcube core #6656 Vclamp=300V Full Bobbin ( ~ 200 Turns) #20 -4.0V MJE200 47 -VBE(OFF) VCC=125V RC=125Ω D1=1N5820 or Equiv. RC=47Ω GAP for 30 mH/2 A Lcoil=50mH Test Waveforms Output Waveforms Ic Ic(pk) t1 Adjusted to Obtain Ic t t1 tf t1≒ VCE VCE or Vclamp TIME t t2 Figure 1. Inductive Switching Measurements ICPK Vclamp tRV tsv 25μS 0 Test Equipment Scope-Tektronics 475 or Equivalent Lcoil(Icpk) Vcc Lcoil(Icpk) t2≒ Vclamp -8.5V tr, tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic Table 2. Typical Inductive Switching Performance Ic AMP Tc ℃ tsv μs tRV μs tFI μs tTI μs tc μs 0.5 25 100 1.3 1.6 0.23 0.26 0.30 0.30 0.35 0.40 0.30 0.36 1 25 100 1.5 1.7 0.10 0.13 0.14 0.26 0.05 0.06 0.16 0.29 1.5 25 100 1.8 3 0.07 0.08 0.10 0.22 0.05 0.08 0.16 0.28 90% Ic 90% Vclamp IC +10.3 V tf CLAMPED tFI tTI tc VCE IB 90% IB1 10% Vclamp 10% Icpk 2% Ic Time UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1 3 of 7 QW-R203-017,F MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads, which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tSV = Voltage Storage Time, 90% IB1 to 10% Vclamp tRV = Voltage Rise Time, 10 ~ 90% Vclamp tFI= Current Fall Time, 90 ~ 10% IC tTI = Current Tail, 10 ~ 2% IC tC = Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these Terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222: PSWT = 1/2 VCCIC(tC)f In general, tRV + tFI ≈ tC. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25℃ and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tC and tSV) which are guaranteed at 100℃. RESISTIVE SWITCHING PERFORMANCE Figure 2. Turn-On Time Figure 3. Turn-Off Time 10 2 7 Vcc=125V Ic/IB=5 TJ=25℃ 1 0.7 Time, t (£gs) 3 Time, t (£gs) tR 0.5 Vcc=125V Ic/IB=5 TJ=25℃ ts 5 0.3 0.2 tD @ VBE(OFF)=5V 0.1 0.07 2 1 0.7 0.5 tF 0.3 0.05 0.2 0.03 0.1 0.02 0.03 0.02 0.05 0.07 0.1 0.02 0.03 0.2 0.3 0.5 0.7 10 20 Collector Current, IC (A) 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 Collector Current, IC (A) Figure 4. Thermal Response 1 Effective Transient Thermal Resistance, R(t) (Normalized) 0.7 D=0.5 0.5 0.3 0.2 0.2 0.1 0.07 ZθJC(t)=r(t) RθJC RθJC=3.12℃/W Max D Curves Apply for Power Pulse Train Shown Read Time at t1 TJ(pk)-TC=P(pk) PθJC(t) 0.05 0.1 0.02 0.05 0.03 0.02 0.01 P (PK) t1 t2 Duty Cycle, D=t1/t2 Single Pulse 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 50 100 200 500 1000 Time or Pulse Width, t (ms) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R203-017,F MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TC = 25℃; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC≥25℃. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5 may be found at any case temperature by using the appropriate curve on Figure 7. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 6 gives PBSOA characteristics. The Safe Operating Area of figures 5 and 6 are specified ratings (for these devices under the test conditions shown.) Figure 5. Active Region Safe Operating Area Figure 6. Reverse Bias Safe Operating Area 10 1.6 10 ms 2 Collector Current, IC (A) Collector Current, IC (A) 5 100μs 1 5.0 ms dc 0.5 1.0 ms Tc=25℃ 0.2 Thermal Limit(Single Pule) Bonding Wire Limit Second Breakdown Limit Curves Apply Below Rated 0.1 0.05 1.2 VBE(OFF)=9V TJ≦100℃ IB1=1A 0.8 0.4 VCEO 5V 0.02 3V 1.5V 0 0.01 5 10 20 100 50 200 300 500 0 100 200 300 400 500 600 700 800 Collector-Emitter Clamp Voltage,VCE (V) Collector-Emitter Voltage, VCE (V) Figure 7. Forward Bias Power Derating 1 Second Breakdown Derating Power Derating Factor 0.8 0.6 Thermal Derating 0.4 0.2 0 20 40 60 80 100 120 140 160 Case Temperature, TC (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R203-017,F MJE13003 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL PERFORMANCE CHARACTERISTICS DC Current Gain Collector Saturation Region 2 Collector-Emitter Voltage, VCE(V) 80 60 DC Current Gain, hFE TJ=150℃ 40 25℃ 30 20 -55℃ 1 0 8 VCE=2V - - - - - -VCE=5V 6 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 Ic=0.1A 0.3A 0.5A 1.2 2 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 Base Current, IB (A) Base-Emitter Voltage Collector-Emitter Saturation Region 1.4 0.35 VBE(SAT) @ IC/IB=3 - - - - - -VBE(ON) @ VCE=2V 1.2 0.3 0.25 1 Voltage, V(V) Voltage, V(V) 1.5A 0.4 Collector Current,IC (A) TJ=-55℃ 25℃ 0.8 25℃ 0.6 0.02 0.03 0.05 0.07 0.1 0.2 0.3 Ic/IB=3 TJ=-55℃ 0.2 25℃ 0.15 0.1 150℃ 150℃ 0.05 0.4 0.5 0.7 1 0 0.02 0.03 2 0.05 0.07 0.1 Collector Current,IC (A) Collector cut-off Region 4 300 Capacitance, C (pF) 10 TJ=150℃ 125℃ 100℃ 1 10 0 0.5 0.7 1 2 Capacitance VCE=250V 10 0.3 500 3 2 0.2 Collector Current, IC (A) 10 Collector Current, IC (μA) 1A 0.8 0 0.002 4 0.02 0.03 TJ=25℃ 1.6 75℃ 50℃ TJ=25℃ Cib 200 100 70 50 30 20 10 -1 7 5 FORWARD REVERSE 10 -0.4 -0.2 Cob 10 25℃ 0 +0.2 +0.4 +0.6 Base-Emitter Voltage, VBE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 Reverse Voltage, VR (V) 6 of 7 QW-R203-017,F MJE13003 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R203-017,F