Si5853DC-RC

Si5853DC_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient N-P-Ch
Ambient Schtky
Case
Foot N-P-Ch
Foot Schtky
RT1
28.8997
33.1335
N/A
22.9528
22.9528
RT2
7.3047
8.7089
N/A
5.9111
5.9111
RT3
20.9223
25.4130
N/A
1.7928
1.7928
RT4
52.5607
62.3696
N/A
9.9214
9.9214
Thermal Capacitance (Joules/°C)
Junction to
Ambient N-P-Ch
Ambient Schtky
Case
Foot N-P-Ch
Foot Schtky
CT1
1.4667 m
1.2288 m
N/A
980.9062 u
980.9062 u
CT2
165.3221 u
143.2141 u
N/A
168.5356 u
168.5356 u
CT3
32.4158 m
24.6048 m
N/A
2.5381
2.5381
CT4
1.3579
1.1251
N/A
13.6418 m
13.6418 m
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 74000
Revision: 21-Jun-07
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Si5853DC_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient N-P-Ch
Ambient Schtky
Case
Foot N-P-Ch
RF1
9.9324
11.7129
N/A
5.3124
Foot Schtky
5.3124
RF2
28.9353
33.3440
N/A
16.3119
16.3119
RF3
19.4955
23.4013
N/A
14.0691
14.0691
RF4
51.4401
61.1111
N/A
4.0773
4.0773
Thermal Capacitance (Joules/°C)
Junction to
Ambient N-P-Ch
Ambient Schtky
Case
Foot N-P-Ch
Foot Schtky
CF1
170.1651 u
143.3699 u
N/A
105.4782 u
105.4782 u
CF2
1.3594 m
1.1104 m
N/A
549.2108 u
549.2108 u
CF3
32.6863 m
25.3112 m
N/A
1.7158 m
1.7158 m
CF4
1.3801
1.1195
N/A
70.8657 m
70.8657 m
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 74000
Revision: 21-Jun-07
Si5853DC_RC
Vishay Siliconix
Document Number: 74000
Revision: 21-Jun-07
www.vishay.com
3
Si5853DC_RC
Vishay Siliconix
www.vishay.com
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Document Number: 74000
Revision: 21-Jun-07