UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. FEATURES * RDS(ON) < 0.8Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 12N60L-TA3-T 12N60G-TA3-T TO-220 12N60L-TF1-T 12N60G-TF1-T TO-220F1 12N60L-TF2-T 12N60G-TF2-T TO-220F2 12N60L-TF3-T 12N60G-TF3-T TO-220F 12N60L-T2Q-T 12N60G-T2Q-T TO-262 12N60L-T3P-T 12N60G-T3P-T TO-3P Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube 1 of 7 QW-R502-170.K 12N60 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-170.K 12N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 12 A 12 A Continuous ID Drain Current Pulsed (Note 2) IDM 48 A 790 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 24 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 / TO-262 225 W TO-220F / TO-220F1 51 W Power Dissipation PD TO-220F2 54 W TO-3P 260 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-262 TO-3P TO-220 / TO-262 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-3P UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATING UNIT 62.5 °C/W 40 0.56 2.43 2.31 0.48 °C/W °C/W °C/W °C/W °C/W 3 of 8 QW-R502-170.K 12N60 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V 1 Gate-Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA, Referenced to 25°C 0.7 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.0A 0.6 0.8 DYNAMIC CHARACTERISTICS 1480 1900 Input Capacitance CISS VDS = 25 V, VGS = 0 V, Output Capacitance COSS 200 270 f = 1MHz Reverse Transfer Capacitance CRSS 25 35 Gate Resistance RG VDS =0V, VGS =0V, f =1MHz 0.2 1.2 SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) 30 70 Turn-On Rise Time tR 115 240 VDD = 300V, ID = 12A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 95 200 Turn-Off Fall Time tF 85 180 Total Gate Charge QG 42 54 VDS= 480V,ID= 12A, Gate-Source Charge QGS 8.6 VGS= 10 V (Note 1, 2) Gate-Drain Charge QGD 21 SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A 1.4 Maximum Continuous Drain-Source Diode IS 12 Forward Current Maximum Pulsed Drain-Source Diode ISM 48 Forward Current 380 Reverse Recovery Time trr VGS = 0 V, IS = 12A, dIF/dt = 100 A/µs (Note 1) Reverse Recovery Charge QRR 3.5 Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT V µA nA V/°C V Ω pF pF pF Ω ns ns ns ns nC nC nC V A A ns µC 4 of 8 QW-R502-170.K 12N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-170.K 12N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit 12V Same Type as D.U.T. 50kΩ 0.2μF Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT 3mA VGS Charge Gate Charge Test Circuit Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate Charge Waveform Unclamped Inductive Switching Waveforms 6 of 8 QW-R502-170.K 12N60 Power MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics On-Resign Characteristics Top: VGS 15V 10V 101 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 101 25°C -55°C 10 0 10 Notes: 250µs Pulse Test TC=25°C 10-1 150°C 100 101 Drain-Source Voltage, VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 Notes: 1.VDS=50V 2.250µs Pulse Test 10-1 2 4 6 8 Gate-Source Voltage, VGS (V) 10 7 of 8 QW-R502-170.K 12N60 TYPICAL CHARACTERISTICS Thermal Response, ZθJC(t) Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-170.K