Datasheet

UNISONIC TECHNOLOGIES CO., LTD
10N60
Power MOSFET
10A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 10N60 is a high voltage and high current power
MOSFET, designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in power
supplies, PWM motor controls, high efficient DC to DC converters
and bridge circuits.

FEATURES
* RDS(ON) < [email protected] =10V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability

SYMBOL
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Copyright © 2014 Unisonic Technologies Co., Ltd
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10N60

Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N60L-TA3-T
10N60G-TA3-T
10N60L-TF3-T
10N60G-TF3-T
10N60L-TF1-T
10N60G-TF1-T
10N60L-TF2-T
10N60G-TF2-T
10N60L-TF3T-T
10N60G-TF3T-T
10N60L- T2Q-T
10N60G- T2Q-T
10N60L-TQ2-T
10N60G-TQ2-T
10N60L-TQ2-R
10N60G-TQ2-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-262
TO-263
TO-263
1
G
G
G
G
G
G
G
G
Pin Assignment
2
D
D
D
D
D
D
D
D
3
S
S
S
S
S
S
S
S
Packing
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Tape Reel
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-262
TO-263
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MARKING
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
± 30
V
Avalanche Current (Note 2)
IAR
10
A
10
A
Continuous
ID
Drain Current
Pulsed (Note 2)
IDM
38
A
700
mJ
Single Pulsed (Note 3)
EAS
Avalanche Energy
Repetitive (Note 2)
EAR
15.6
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262/TO-263
156
TO-220F/TO-220F1
50
Power Dissipation
PD
W
TO-220F3
TO-220F2
52
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=14.2mH, IAS=10A, VDD= 50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤9.5A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-262/TO-263
SYMBOL
θJA
UNISONIC TECHNOLOGIES CO., LTD
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θJC
RATING
62.5
0.8
2.5
UNIT
°C/W
°C/W
2.4
0.7
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ELECTRICAL CHARACTERISTICS( TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BVDSS
TEST CONDITIONS
VGS=0V, ID=250μA
VDS=600V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=480V, TC=125°С
Forward
VGS=30 V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-30 V, VDS=0V
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250µA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V, VGS=0V, f=1.0 MHz
Reverse Transfer Capacitance
CRSS
Gate Resistance
RG
VDS=0V, VGS=0V, f=1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=300V, ID =10A,
R
Turn-Off Delay Time
tD(OFF)
G =25Ω (Note1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=480V, ID=10A,
Gate-Source Charge
QGS
VGS=10 V (Note1, 2)
Gate-Drain Charge
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS=0 V, IS =10A
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS=0 V, IS=10A,
dIF/dt=100A/µs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
600
0.7
2.0
V
1
µA
100 µA
100 nA
-100 nA
V/°C
4.0
0.68 0.75
V
Ω
1570 2040 pF
166 215 pF
18
24
pF
0.25
1.4
Ω
23
55
69 150
144 300
77 165
44
57
6.7
18.5
420
4.2
ns
ns
ns
ns
nC
nC
nC
1.4
V
10
A
38
A
ns
µC
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Gate-Source Voltage, VCG (V)
TYPICAL CHARACTERISTICS
Capacitance, (pF)

Power MOSFET
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Power MOSFET
TYPICAL CHARACTERISTICS(Cont.)
Drain Current, ID (A)
Drain Current, ID (A)

Transient Thermal Response Curve
100
D=0.5
0.2
NOTES:
1.ZθJC(t)=2.5D/W Max
2.Duty Factor,D=t1/t2
3.TJW-TC=PDW-ZθJC(t)
-1
10
0.1
0.05
0.02
PDW
0.01
Single pulse
10-2
10-5
10-4
10-3
10-2
10-1
Square Wave Pulse Duration, t1 (sec)
UNISONIC TECHNOLOGIES CO., LTD
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t1
t2
100
101
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Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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