UNISONIC TECHNOLOGIES CO., LTD 3LN01M Preliminary Power MOSFET N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS DESCRIPTION The 3LN01M uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications. FEATURES * RDS(ON) = 3.7Ω @VGS = 4 V * Ultra low gate charge ( typical 1.58 nC ) * Low reverse transfer capacitance ( CRSS = typical 2.3 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Lead-free: 3LN01ML Halogen-free: 3LN01MG SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Normal 3LN01M-AL3-R Ordering Number Lead Free 3LN01ML-AL3-R Halogen-Free 3LN01MG-AL3-R Package SOT-323 Pin Assignment 1 2 3 S G D Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-285.a 3LN01M Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) PARAMETER SYMBOL VDSS VGSS RATINGS UNIT V 30 V ±10 DC 0.15 Drain Current ID A Pulse(Note 2) 0.6 Power Dissipation PD 0.15 W Storage Temperature TSTG ℃ -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width≦10μs, Duty cycle≦1% Drain-Source Voltage Gate-Source Voltage ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS Cutoff Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge SYMBOL BVDSS IDSS IGSS VGS(OFF) RDS(ON) gFS CISS COSS CRSS TEST CONDITIONS VGS=0V, ID=1mA VDS=30V,VGS=0V VGS=±8V, VDS=0V 30 VDS=10V, ID=100µA VGS=4V, ID=80mA VGS=2.5V, ID=40mA VGS=1.5V, ID=10mA VDS=10V, ID=80mA 0.4 VDS=10V, VGS=0 V, f=1.0MHz QG VDS=10V, VGS=10V, ID=150mA Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR See specified Test Circuit Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=150mA, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 1 ±10 0.15 2.9 3.7 6.4 0.22 1.3 3.7 5.2 12.8 V µA µA V Ω S 7.0 5.9 2.3 pF pF pF 1.58 0.26 0.31 19 65 155 120 nC nC ns ns ns ns 0.87 nC 1.2 V 2 of 3 QW-R502-285.a 3LN01M Preliminary Power MOSFET Switching Time Test Circuit UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-285.a