3LN01M Small Signal MOSFET 30V, 3.7Ω, 0.15A, Single N-Channel www.onsemi.com Features Electrical Connection • Low ON-Resistance • Ultrahigh-Speed Switching • 1.5V Drive • Halogen Free Compliance N-Channel 3 Specifications 1 Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID 0.15 A IDP 0.6 A Power Disspation PD 0.15 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% 2 Packing Type:TL 1:Gate 2:Source 3:Drain Marking LOT No. This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model YA LOT No. TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Electrical Characteristics at Ta = 25°C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 30 1 μA Gate to Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Gate Threshold Voltage VGS(th) VDS=10V, ID=100μA 0.4 Forward Transconductance gFS VDS=10V, ID=80mA 0.15 V 1.3 0.22 V S Continued on next page. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 November 2014 - Rev. 1 1 Publication Order Number : 3LN01M/D 3LN01M Continued from preceding page. Value Parameter Symbol Conditions Unit min Static Drain to Source On-State Resistance typ max RDS(on)1 ID=80mA, VGS=4V 2.9 3.7 Ω RDS(on)2 ID=40mA, VGS=2.5V 3.7 5.2 Ω RDS(on)3 ID=10mA, VGS=1.5V 6.4 12.8 Ω Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance 7.0 pF 5.9 pF Crss 2.3 pF Turn-ON Delay Time td(on) 19 ns Rise Time tr 65 ns Turn-OFF Delay Time td(off) 155 ns Fall Time tf 120 ns Total Gate Charge Qg 1.58 nC Gate to Source Charge Qgs 0.26 nC Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=10V, ID=150mA 0.31 IS=150mA, VGS=0V 0.87 nC 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit 4V 0V VDD=15V VIN PW=10μs D.C.≤1% ID=80mA RL=184.6Ω VOUT VIN D G 3LN01M P.G 50Ω S www.onsemi.com 2 3LN01M www.onsemi.com 3 3LN01M www.onsemi.com 4 3LN01M Package Dimensions 3LN01M-TL-E/ 3LN01M-TL-H SC-70/MCP3 CASE 419AJ ISSUE O Unit : mm 1 : Gate 2 : Source 3 : Drain Recommended Soldering Footprint 2.1 1.0 0.7 0.65 0.65 ORDERING INFORMATION Device 3LN01M-TL-E 3LN01M-TL-H Shipping Package Note Pb-Free MCP3 SC-70,SOT-323 3,000 pcs. / reel Pb-Free and Halogen Free Note on usage : Since the 3LN01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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