Datasheet

UNISONIC TECHNOLOGIES CO., LTD
13NM65-SH
Power MOSFET
13A, 650V N-CHANNEL
SUPER-JUNCTION MOSFET

DESCRIPTION
The UTC 13NM65-SH is a high voltage super junction MOSFET
and is designed to have better characteristics.
The UTC 13NM65-SH Utilizing an advanced charge-balance
technology, enhance system efficiency, improve EMI and reliability.
such as low gate charge, low on-state resistance and have a high
power density and high rugged avalanche characteristics. This super
junction MOSFET usually used at AC/DC power conversion, and
industrial power applications.

FEATURES
* RDS(ON) < 0.5Ω @ VGS = 10V, ID = 6.5A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
13NM65L-TF3-T
13NM65G-TF3-T
13NM65L-TF1-T
13NM65G-TF1-T
13NM65L-TN3-R
13NM65G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Package
TO-220F
TO-220F1
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tape Reel
13NM65L-TF3-T
(1) Packing Type
(1) T: Tube, R: Tape Reel
(2) Package Type
(2) TF3: TO-220F, TF1: TO-220F1, TN3: TO-252
(3) Green Package
(3) L: Lead Free, G: Halogen Free and Lead Free
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Copyright © 2016 Unisonic Technologies Co., Ltd
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
Power MOSFET
MARKING
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
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
13
A
Pulsed Drain Current (Note 2)
IDM
52
A
Avalanche Current (Note 2)
IAR
13
A
Single Pulsed Avalanche Energy (Note 3)
EAS
250
mJ
Repetitive Avalanche Energy (Note 2)
EAR
17
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F/TO-220F1
168
Power Dissipation (TC=25°C)
PD
W
TO-252
48
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 150mH, IAS = 2.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 13A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
TO-220F/TO-220F1
TO-252
TO-220F/TO-220F1
TO-252
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θJA
θJC
RATING
62.5
110
0.74
1.79
UNIT
°C/W
°C/W
°C/W
°C/W
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ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
IDSS
VGS = 0V, ID = 250μA
650
VDS = 650V, VGS = 0V
VGS = 30V, VDS = 0V
Gate-Source Leakage Current
IGSS
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
2.5
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 6.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V,
Output Capacitance
COSS
f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, ID=1.3A, IG=100μA
Gate-Source Charge
QGS
VGS=10V (Note 1,2)
Gate-Drain Charge
QGD
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD =30V, ID =0.5A, RG =25Ω,
VGS=10V (Note 1,2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 13 A
Reverse Recovery Time
trr
VGS = 0V, IS = 13A,
dIF / dt =100A/μs (Note 1)
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.
UNISONIC TECHNOLOGIES CO., LTD
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10
100
-100
V
μA
nA
nA
V/°C
4.5
0.5
V
Ω
0.5
780
500
30
pF
pF
pF
110
10
25
58
75
155
29
nC
nC
nC
nS
nS
nS
nS
376
5.3
13
A
52
A
1.4
V
nS
μC
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TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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