Datasheet

UNISONIC TECHNOLOGIES CO., LTD
8NM60-SH
Preliminary
Power MOSFET
8.0A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 8NM60-SH is a high voltage super junction MOSFET
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in switching
power supplies and adaptors.

FEATURES
* RDS(ON) < 0.78Ω @ VGS = 10V, ID = 4.0A
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness


SYMBOL
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
8NM60L-TA3-T
8NM60G-TA3-T
8NM60L-TF1-T
8NM60G-TF1-T
8NM60L-TF2-T
8NM60G-TF2-T
8NM60L-TF3-T
8NM60G-TF3-T
8NM60L-TM3-R
8NM60G-TM3-R
8NM60L-TN3-R
8NM60G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2016 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
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QW-R205-088.b
8NM60-SH

Preliminary
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
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8NM60-SH

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
8.0
A
Continuous
ID
8.0
A
Drain Current
Pulsed (Note 2)
IDM
32
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
210
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
5.0
V/ns
TO-220
130
W
TO-220F/TO-220F1
Power Dissipation
PD
48
W
TO-220F2
TO-251/TO-252
62
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L=150mH, IAS=1.6A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤8A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
UNIT
62.5
°С/W
110
0.96
°С/W
°С/W
2.6
°С/W
2
°С/W
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8NM60-SH

Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BVDSS
IDSS
TEST CONDITIONS
VGS = 0V, ID = 250μA
VDS = 600V, VGS = 0V
Forward
VGS = 30V, VDS = 0V
Gate- Source Leakage Current
IGSS
Reverse
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 4.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS=25V, VGS=0V, f=1.0 MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A,
Gate-Source Charge
QGS
IG=100μA (Note 1, 2)
Gate-Drain Charge
QGD
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD=30V, VGS=10V, ID=0.5A,
RG =25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 8 A
Reverse Recovery Time
trr
VGS = 0 V, ISD = 8A,
di/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
600
1
100
-100
V
μA
nA
nA
V/°C
4.5
0.78
V
Ω
0.67
2.5
330
248
3.5
pF
pF
pF
78
4.8
15.6
nC
nC
nC
48
76
164
50
ns
ns
ns
ns
320
3.6
8
A
32
A
1.4
V
ns
μC
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8NM60-SH

Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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8NM60-SH
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

RL
VDS
VGS
RG
VDD
D.U.T.
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
Switching Test Circuit
12V
0.2µF
50kΩ
0.3µF
Switching Waveforms
Same
Type as
D.U.T.
VDS
VGS
DUT
3mA
Gate Charge Test Circuit
VDS
Gate Charge Waveform
L
BVDSS
IAS
RG
VD
ID(t)
10V
D.U.T.
VDS(t)
VDD
tp
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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8NM60-SH
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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