Datasheet

Photomicrosensor (Reflective)
EE-SY169B
Be sure to read Precautions on page 24.
■ Dimensions
■ Features
Note: All units are in millimeters unless otherwise indicated.
• High-quality model with plastic lenses.
• Highly precise sensing range with a tolerance of ±0.6 mm horizontally and vertically.
• With a red LED sensing dyestuff-type links.
• Limited reflective model
• Higher gain than EE-SY169.
• Possible to get the same IL as EE-SY169 with IF=10 mA. (half of
EE-SY169 condition)
• Recommended sensing distance = 4.0 mm
3.2
0.5
6±0.3 2.5
1.8
12.5±0.3
8±0.3
■ Absolute Maximum Ratings (Ta = 25°C)
Surface A
1
3±0.5
1±
0.1 dia.
3±0.5
1
Item
Two, C0.2
1±0.1 dia.
Emitter
(see note)
4.8
(see note)
9.2±0.5
3.2
7±0.1
A
C
K
E
0.5
Detector
3
2.5
Internal Circuit
A
C
K
E
Note: These dimensions are for the
surface A. Other lead wire
pitch dimensions are for the
housing surface.
Unless otherwise specified, the
tolerances are as shown below.
Dimensions
Terminal No.
A
K
C
E
Ambient temperature
Symbol
IF
40 mA
(see note 1)
Pulse forward current
IFP
300 mA
(see note 2)
Reverse voltage
VR
3V
Collector–Emitter
voltage
VCEO
30 V
Emitter–Collector
voltage
VECO
---
Collector current
IC
20 mA
Collector dissipation
PC
100 mW
(see note 1)
Operating
Topr
0°C to 70°C
Storage
Tstg
–20°C to 80°C
Tsol
260°C
(see note 3)
Soldering temperature
Tolerance
Name
3 mm max.
±0.3
Anode
Cathode
Collector
Emitter
3 < mm ≤ 6
±0.375
6 < mm ≤ 10
±0.45
10 < mm ≤ 18
±0.55
18 < mm ≤ 30
±0.65
Rated value
Forward current
Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■ Electrical and Optical Characteristics (Ta = 25°C)
Item
Emitter
Symbol
Value
Condition
Forward voltage
VF
1.85 V typ., 2.3 V max.
IF = 20 mA
Reverse current
IR
0.01 μA typ., 10 μA max.
VR = 3 V
Peak emission wavelength
λP
660 nm typ.
IF = 20 mA
Light current
IL
160 μA min., 2,000 μA max.
IF = 10 mA, VCE = 5 V
White paper with a reflection ratio of
90%, d = 4 mm (see note)
Dark current
ID
2 nA typ., 200 nA max.
VCE = 5 V, 0 lx
Leakage current
ILEAK
2 μA max.
IF = 20 mA, VCE = 5 V with no reflection
---
---
λP
850 nm typ.
VCE = 5 V
Rising time
tr
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time
tf
30 μs typ.
VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Detector
Collector–Emitter saturated volt- VCE (sat)
age
Peak spectral sensitivity wavelength
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
164
EE-SY169B Photomicrosensor (Reflective)
■ Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
100
IF
40
80
30
60
20
40
10
20
−20
0
20
40
60
1,000
800
600
400
200
0
0
100
80
10
0
90
80
70
60
80
100
Ambient temperature Ta (°C)
200
100
3
4
5
6
7
8
9
0.01
0.001
−30 −20 −10 0
100
140
120
100
80
60
40
20
0
−30
−20
−10
0
10
Angle deviation θ (°)
20
30
tr
0.1
IF = 10 mA
VCE = 5 V
Ta = 25°C
d1 = 4 mm
100
d2
40
Direction
d1
Sen-
20
105
10
1
Sensing Position Characteristics
(Typical)
120
Sensing object: White
paper with a reflection
factor of 90%
60
Sensor
sor
Sensing object:
White paper with
a reflection factor
of 90%
80
Sensing
d = 0 object
60
d2
Direction
40
d1
Sensor
20
0
1
Relative light current IL (%)
Relative light current IL (%)
d
25
Load resistance RL (kΩ)
d1 = 3.5 mm
d1 = 4.0 mm
d1 = 4.5 mm
80
110
180
20
10
1
0.01
2
3
4
5
6
5
6
Sensing object:
White paper with
a reflection factor
of 90%
Ta = 25°
IF = 10 mA
VCE = 10 V
8
9
10
11
12
13
Response Time Measurement
Circuit
Input
d
0
t
90 %
10 %
Output
d = 3 mm
d = 4 mm
d = 5 mm
100
7
Distance d2 (mm)
Sensing Angle Characteristics
(Typical)
200
15
tf
10 20 30 40 50 60 70 80 90
IF = 10 mA
VCE = 5 V
Ta = 25°C
10
d = 3 mm Ta = 25°C
d = 4 mm IF = 10 mA
d = 5 mm VCE = 10 V
10
100
Distance d2 (mm)
160
5
0
1,000
Sensing Position Characteristics
(Typical)
Sensing Angle Characteristics
(Typical)
220
IF = 2.5 mA
Vcc = 5 V
Ta = 25°C
0.1
Distance d (mm)
240
0
Response Time vs. Load
Resistance Characteristics
(Typical)
0
2
IF = 5 mA
Collector−Emitter voltage VCE (V)
1
0
1
400
60
10
Relative light current IL (%)
Light current IL (μA)
300
0
IF = 10 mA
600
10,000
120
Sensing object:
White paper
with a reflection
factor of 90%
400
800
Ambient temperature Ta (°C)
Ta = 25°C
IF = 20 mA
VCE = 10 V
500
50
100
Sensing Distance Characteristics
(Typical)
600
40
Response time tr, tf (μs)
Dark Current ID (nA)
Relative light current IL (%)
100
40
IF = 15 mA
1,000
VCE = 10 V
0lx
1,000
20
30
10,000
110
0
20
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
IF = 10 mA
VCE = 5 V
−20
1,200
Forward current IF (mA)
120
60
−40
Sensing object: White
paper with a reflection
factor of 90%
200
Ambient temperature Ta (°C)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
IF = 20 mA
Ta = 25°C
d = 4 mm
1,400
Relative light current IL (%)
0
−40
1,600
d = 4 mm
VCE = 5 V
Light current IL (μA)
50
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
1,200
Light current IL (μA)
PC
Forward current IF (mA)
1,400
120
Collector dissipation Pc (mW)
60
Light Current vs. Forward Current
Characteristics (Typical)
0
t
tr
95
Input
tf
IL
VCC
90
Output
85
RL
80
−20
−10
0
10
20
Angle deviation θ (°)
EE-SY169B Photomicrosensor (Reflective)
165
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