Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N90-KA
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Power MOSFET
4 Amps, 900 Volts
N-CHANNEL POWER MOSFET

DESCRIPTION
The UTC 4N90-KA is a N-channel enhancement MOSFET
adopting UTC’s advanced technology to provide customers with
DMOS, planar stripe technology. This technology is designed to
meet the requirements of the minimum on-state resistance and
perfect switching performance. It also can withstand high energy
pulse in the avalanche and communication mode.
The UTC 4N90-KA is particularly applied in high efficiency
switch mode power supplies.

FEATURES
* RDS(ON) < 4.2Ω @ VGS=10V, ID=2A
* High switching speed
* 100% avalanche tested
* Improved dv/dt capability
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SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N90L-TN3-R
4N90G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4
A
Continuous
ID
4
A
Continuous Drain Current
16
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
240
mJ
Avalanche Energy
14
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC=25°C)
54
W
PD
0.43
W/°C
Derate above 25°C
Operating Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=30mH, IAS=4A, VDD=50V, RG=25Ω, Starting TJ=25°C
4. ISD ≤4A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

THERMAL RESISTANCES CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
RATINGS
110
2.3
UNIT
°C/W
°C/W
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
BVDSS
VGS=0V, ID=250µA
ID=250μA,
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ
Referenced to 25°C
VDS=900V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=720V, TC=125°C
Forward
IGSS
VGS=+30V, VDS=0V
Gate- Source Leakage Current
VGS=-30V, VDS=0V
Reverse
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=2A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V,VGS=0V,f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=50V, VGS=10V, ID=1.3A
Gate-Source Charge
QGS
(Note 1,2)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDD=30V, ID=0.5A, RG=25Ω
Turn-ON Rise Time
tR
(Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS =4A, VGS=0V
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
MAX UNIT
900
V
1.05
3.0
3.5
V/°C
10
100
+100
-100
µA
µA
nA
nA
5.0
4.2
V
Ω
900
67
50
pF
pF
pF
38
7.5
8.8
65
56
130
50
nC
nC
nC
ns
ns
ns
ns
4
16
1.4
A
A
V
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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