UNISONIC TECHNOLOGIES CO., LTD 5NM70 Power MOSFET 5.0A, 700V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 5NM70 is an Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 1.3Ω @ VGS =10V, ID = 2.5 A * Fast Switching Capability * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 5NM70L-TF1-T 5NM70G-TF1-T 5NM70L-TM3-T 5NM70G-TM3-T 5NM70L-TMS-T 5NM70G-TMS-T 5NM70L-TMS2-T 5NM70G-TMS2-T 5NM70L-TMN2-T 5NM70G-TMN2-T 5NM70L-TN3-R 5NM70G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd Package TO-220F1 TO-251 TO-251S TO-251S2 TO-251NS2 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel 1 of 7 QW-R209-127.E 5NM70 Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-127.E 5NM70 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Continuous Drain Current ID 5 A Pulsed Drain Current (Note 2) IDM 20 A Avalanche Current (Note 2) IAR 1.9 A Single Pulsed (Note 3) EAS 60 mJ Avalanche Energy 0.2 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.0 V/ns TO-220F1 36 W Power Dissipation TO-251/TO-251S (TC=25°C) TO-251S2/TO-251NS2 54 W TO-252 PD TO-220F1 0.288 W/°C TO-251/TO-251S Derate above 25°C TO-251S2/TO-251NS2 0.432 W/°C TO-252 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L=33mH, IAS=1.9A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤5.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220F1 TO-251/TO-251S Junction to Ambient TO-251S2/TO-251NS2 TO-252 TO-220F1 TO-251/TO-251S Junction to Case TO-251S2/TO-251NS2 TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 UNIT °С/W 110 °С/W 3.47 °С/W 2.3 °С/W 3 of 7 QW-R209-127.E 5NM70 Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS VGS=0V, ID=250μA VDS=700V, VGS=0V VGS=30V, VDS=0V VGS=-30V, VDS=0V MIN TYP MAX UNIT 700 ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.5 Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge (Note 1) QG VDS=50V, VGS=10V, ID=1.3A , Gate to Source Charge QGS IG=100µA (Note 1, 2) Gate to Drain Charge QGD Turn-ON Delay Time (Note 1) tD(ON) VDD=30V, VGS=10V, ID=0.5A, Rise Time tR RG=25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage (Note 1) VSD IS=5A, VGS=0V Body Diode Reverse Recovery Time (Note 1) trr IS=5A, VGS=0V, dIF/dt=100A/µs Body Diode Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 100 -100 4.5 1.3 V μA nA V Ω 330 215 20 pF pF pF 50 4 11 36 65 140 45 nC nC nC ns ns ns ns 5 20 1.4 290 2.5 A A V ns µC 4 of 7 QW-R209-127.E 5NM70 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-127.E 5NM70 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-127.E 5NM70 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-127.E