Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UF624Z
Preliminary
Power MOSFET
4.4A, 250V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UF624Z is an N-Channel enhancement MOSFET, it
uses UTC’s advanced technology to provide customers with a
minimum on-state resistance, high switching speed and low gate
charge.
The UTC UF624Z is suitable for all commercial-industrial
applications.

FEATURES
* RDS(ON)<1.1Ω @VGS=10V,ID=2.6A
* Low gate charge ( Max=14nC)
* Low CRSS ( Typ=15pF)
* High switching speed
* ESD resistant

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF624ZL-TN3-T
UF624ZG-TN3-T
UF624ZL-TN3-R
UF624ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source

Package
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
MARKING INFORMATION
PACKAGE
MARKING
TO-252
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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UF624Z

Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
250
V
Gate-Source Voltage
VGSS
±20
V
VGS at 10V, TC=25°C
4.4
A
Continuous
ID
Drain Current
VGS at 10V, TC=100°C
2.8
A
Pulsed (Note 2)
IDM
14
A
Avalanche Current (Note 2)
IAR
4.4
A
Single Pulsed (Note 3)
EAS
100
mJ
Avalanche Energy
Repetitive (Note 2)
EAR
5.0
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.8
V/ns
50
W
Power Dissipation (TC=25°C)
PD
Linear Derating Factor
0.40
W/°C
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by maximum junction temperature.
3. VDD=50V, starting TJ=25°C, L=10.33mH, Rg=25Ω, IAS=4.4A.
4. ISD≤4.4A, dI/dt≤90A/μs, VDD≤VDS, TJ≤150°C.

THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
110
2.5
UNIT
°C/W
°C/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
250
V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=1mA
0.36
V/°C
VDS=250V, VGS=0V
25
µA
Drain-Source Leakage Current
IDSS
VDS=200V, VGS=0V , TJ=125°C
250 µA
VGS=+20V, VDS=0V
±10 µA
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
±10 µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=2.6A (Note 2)
1.1
Ω
Forward Transconductance
gFS
VDS=50V, ID=2.6A (Note 2)
1.5
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
260
pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
77
pF
Reverse Transfer Capacitance
CRSS
15
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
18
nC
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
6
nC
IG=100μA
Gate to Drain Charge
QGD
4
nC
28
ns
Turn-ON Delay Time
tD(ON)
Rise Time
tR
145
ns
VDD=30V, ID=0.5A, RG=25Ω
Turn-OFF Delay Time
tD(OFF)
90
ns
Fall-Time
tF
170
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
4.4
A
Maximum Body-Diode Pulsed Current
ISM
14
A
(Note 1)
TJ=25°C, IS=4.4A, VGS=0V
1.8
V
Drain-Source Diode Forward Voltage
VSD
(Note 2)
TJ=25°C, IF=4.4A,
200 400 ns
Body Diode Reverse Recovery Time
tRR
dI/dt=100A/µs (Note 2)
Body Diode Reverse Recovery Charge
QRR
0.93 1.9 µC
Notes: 1. Repetitive rating; pulse width limited by maximum junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Time
Unclamped Inductive Switching Waveforms
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
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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UF624Z
Preliminary
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
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UF624Z
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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