UNISONIC TECHNOLOGIES CO., LTD UF624Z Preliminary Power MOSFET 4.4A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF624Z is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UF624Z is suitable for all commercial-industrial applications. FEATURES * RDS(ON)<1.1Ω @VGS=10V,ID=2.6A * Low gate charge ( Max=14nC) * Low CRSS ( Typ=15pF) * High switching speed * ESD resistant SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF624ZL-TN3-T UF624ZG-TN3-T UF624ZL-TN3-R UF624ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING INFORMATION PACKAGE MARKING TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-856.b UF624Z Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 250 V Gate-Source Voltage VGSS ±20 V VGS at 10V, TC=25°C 4.4 A Continuous ID Drain Current VGS at 10V, TC=100°C 2.8 A Pulsed (Note 2) IDM 14 A Avalanche Current (Note 2) IAR 4.4 A Single Pulsed (Note 3) EAS 100 mJ Avalanche Energy Repetitive (Note 2) EAR 5.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.8 V/ns 50 W Power Dissipation (TC=25°C) PD Linear Derating Factor 0.40 W/°C Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. VDD=50V, starting TJ=25°C, L=10.33mH, Rg=25Ω, IAS=4.4A. 4. ISD≤4.4A, dI/dt≤90A/μs, VDD≤VDS, TJ≤150°C. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 110 2.5 UNIT °C/W °C/W 2 of 7 QW-R502-856.b UF624Z Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V 250 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Reference to 25°C, ID=1mA 0.36 V/°C VDS=250V, VGS=0V 25 µA Drain-Source Leakage Current IDSS VDS=200V, VGS=0V , TJ=125°C 250 µA VGS=+20V, VDS=0V ±10 µA Gate-Source Leakage Current IGSS VGS=-20V, VDS=0V ±10 µA ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.6A (Note 2) 1.1 Ω Forward Transconductance gFS VDS=50V, ID=2.6A (Note 2) 1.5 S DYNAMIC PARAMETERS Input Capacitance CISS 260 pF VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS 77 pF Reverse Transfer Capacitance CRSS 15 pF SWITCHING PARAMETERS Total Gate Charge QG 18 nC VGS=10V, VDS=50V, ID=1.3A Gate to Source Charge QGS 6 nC IG=100μA Gate to Drain Charge QGD 4 nC 28 ns Turn-ON Delay Time tD(ON) Rise Time tR 145 ns VDD=30V, ID=0.5A, RG=25Ω Turn-OFF Delay Time tD(OFF) 90 ns Fall-Time tF 170 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS 4.4 A Maximum Body-Diode Pulsed Current ISM 14 A (Note 1) TJ=25°C, IS=4.4A, VGS=0V 1.8 V Drain-Source Diode Forward Voltage VSD (Note 2) TJ=25°C, IF=4.4A, 200 400 ns Body Diode Reverse Recovery Time tRR dI/dt=100A/µs (Note 2) Body Diode Reverse Recovery Charge QRR 0.93 1.9 µC Notes: 1. Repetitive rating; pulse width limited by maximum junction temperature. 2. Pulse width≤300µs; duty cycle≤2%. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 7 QW-R502-856.b UF624Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 4 of 7 QW-R502-856.b UF624Z Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit and Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-856.b UF624Z Preliminary UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Power MOSFET 6 of 7 QW-R502-856.b UF624Z Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-856.b