UNISONIC TECHNOLOGIES CO., LTD 3N65 Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 3.8Ω @ VGS = 10V, ID = 1.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 3N65L-TA3-T 3N65G-TA3-T 3N65L-TF1-T 3N65G-TF1-T 3N65L-TF3-T 3N65G-TF3-T 3N65L-TM3-T 3N65G-TM3-T 3N65L-TMS-T 3N65G-TMS-T 3N65L-TMS2-T 3N65G-TMS2-T 3N65L-TMS4-T 3N65G-TMS4-T 3N65L-TN3-R 3N65G-TN3-R 3N65L-T60-K 3N65G-T60-K 3N65G-K08-5060-R Note: Pin Assignment: G: Gate D: Drain Package TO-220 TO-220F1 TO-220F TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-126 DFN-8(5×6) S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 G G G G G G G G G S 2 D D D D D D D D D S Pin Assignment 3 4 5 6 S S S S S S S S S S G D D 7 D 8 D Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel Bulk Tape Reel 1 of 8 QW-R502-590.F 3N65 Power MOSFET MARKING Package TO-220 TO-220F TO-220F1 TO-251 MARKING TO-251S TO-251S2 TO-251S4 TO-252 TO-126 DFN-8(5×6) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-590.F 3N65 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 200 mJ Avalanche Energy Repetitive (Note 2) EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 75 TO-220F/TO-220F1 34 TO-251/TO-252/TO-251S 50 Power Dissipation PD W TO-251S2/TO-251S4 TO-126 17 DFN-8(5×6) 25 Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 3.0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATING TO-220/TO-220F 62.5 TO-220F1 TO-251/TO-252/TO-251S 110 Junction to Ambient θJA TO-251S2/TO-251S4 TO-126 132 DFN-8(5×6) 75 (Note) TO-220 1.67 TO-220F/TO-220F1 3.68 TO-251/TO-252/TO-251S 2.5 Junction to Case θJC TO-251S2/TO-251S4 TO-126 7.36 DFN-8(5×6) 5 (Note) Note: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT °C/W °C/W 3 of 8 QW-R502-590.F 3N65 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0 V, ID = 250 μA VDS = 650 V, VGS = 0 V Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 1.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 30V, ID = 0.5A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 50V, ID=1.3A, Gate-Source Charge QGS VGS= 10 V (Note 1, 2) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 64mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 0.6 2.0 V 10 μA 100 nA -100 nA V/°C 2.8 4.0 3.8 V Ω 430 50 11 500 65 20 pF pF pF 32 64 115 60 51 13 11 45 80 140 75 70 ns ns ns ns nC nC nC 1.4 V 3.0 A 12 A 4 of 8 QW-R502-590.F 3N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-590.F 3N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDD VGS RG D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R502-590.F Drain Current, ID (A) Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) Thermal Response, θJC (t) 3N65 Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw QW-R502-590.F 7 of 8 3N65 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) On State Current vs. Allowable Case Temperature Safe Operating Area Operation in This Area is Limited by RDS(on) 101 10 100µs 1ms 10ms 100 1 DC 10-1 10-2 100 Notes: 1. TJ=25°C 2. TJ=150°C 3. Single Pulse Notes: 1. VGS=0V 2. 250µs Test 1 10 10 2 650 10 3 Drain-Source Voltage, VDS (V) 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-590.F